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    AVW SMD TRANSISTOR Search Results

    AVW SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    AVW SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TDA4819

    Abstract: No abstract text available
    Text: bOE i m 4S35bOS 005G077 725 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF - P S 8 - U Power Factor Controller PFC - 3 I TDA 4815; TDA 4818; TDA 4819 IC for High Power Factor and Active Harmonic Filtering Advance Information Bipolar IC Features • Power factor approaching 1


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    4S35bOS 005G077 P-DIP-16 Q67000-A8323 P-DIP-20-1 Q67000-A8324 P-DSO-20-1 TDA4819 TDA4819 PDF

    AVW smd

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Lett = 0.6 jxm) • Total Dose Hardness through 1x10 rad (S i0 2)


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    HX84050 1x101 1x109 200-Lead AVW smd PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)


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    HLX6228 1x106 1x101 1x109 0014flb 6C634 PDF

    NSL 32 equivalent

    Abstract: AVW smd AVW smd transistor
    Text: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)


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    36-Lead HX6408 5x105rad 1x101 NSL 32 equivalent AVW smd AVW smd transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.75 (am Process (Lel(= 0.6 |am) • Read/Write Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C)


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    1x106rad 1x1011 HX6256 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead PDF

    Untitled

    Abstract: No abstract text available
    Text: Device Specifications SIEM ENS 10 Device Specifications 10.1 Absolute Maximum Ratings Ambient temperature under bias 7^ . Storage temperature (rST). Voltage on Vcc pins with respect to ground (Vss) Voltage on any pin with respect to ground (Fss) .


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    00711bà P-LCC-44 535b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


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    1x106rad 1x101 1x109 HX6256 28-Lead GQG1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)


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    1x106rad HLX6228 1x101 1x109 32-Lead PDF

    transistor SMD 1p4

    Abstract: KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A
    Text: x | P j y j E M C •r / i n r c T im r r c i “ b t c d io • Enhancement mode T "« i w«« + i 1 »*/¡+l^ /^k n r / - \ v\ /•* v Tem I ci I ip perature c i cuui c dei sensor lövji w in I u iy iid iu i 0 1 icii a u ic i iouo • The drain pin is eiectricaNy shorted to the tab


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    TQ-220AB C67078-A5007-A2 Q67060-S6202-A2 E3043 Q67060-S6202-A4 GPT05165 O-22QAB/5, E3062 BTS432E2 E3062A transistor SMD 1p4 KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A PDF

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


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    A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000 PDF

    Dynatek 110

    Abstract: block diagram of hemodialysis machine UTM ceramic RESISTOR 310-3 74HC590
    Text: 1 Crystal Semiconductor brings the benefits of leadership, high quality, analog VLSI solutions to our customers. 1 C rystal S e m icon du cto r C orporation Data A c q u is itio n Data B ook LIFE SUPPORT AND NUCLEAR POLICY CRYSTAL SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR AND SHOULD NOT BE USED WITHIN


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    PDF

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


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    A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D PDF