STR5412
Abstract: transformador diodo potencia transformador chopper DIODOS ZENER resistencia variable FALLAS TV transformador de pulsos diodo zener fuente conmutada
Text: DETECCION DE FALLAS Y REPARACION FUENTES SWITCHING DE TV FUENTE DE PODER SWITCHING Vamos a analizar el trabajo de una fuente de poder conmutada switching , que hace uso del circuito híbrido STR5412. En primer término describiremos en qué consiste este circuito híbrido, cuyo diagrama equivalente
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STR5412.
STR5412
transformador
diodo potencia
transformador chopper
DIODOS ZENER
resistencia variable
FALLAS TV
transformador de pulsos
diodo zener
fuente conmutada
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S3WB60Z
Abstract: No abstract text available
Text: . . . asm&mm sq i p Square In-line Package Bridge Diode 7 A ^> v x S 'f"? Avalancha type tnout/Output in-line Package O U T L IN E DIM ENSIONS S3WBDZ 600V 2.3A • RATINGS A bsolute Maximum R atin g s m i tin Item Symbol Operating Junction Temperature #A.mmw±
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Q05R13
S3WB60Z
S3WB60Z
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423R
Abstract: f423 IR 423
Text: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE
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F420/421/422/423
FF420R/421
/422R
/423R
O-205AF
IRFF420,
IRFF421,
IRFF422,
IRFF423
IRFF420R,
423R
f423
IR 423
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Untitled
Abstract: No abstract text available
Text: S I NO -A M E R I CA N SILICON S4E ß2fll74Li G Ü GDG bD J> 1 HIGH VOLTAGE PLASTIC RECTIFIER T ^ 'O S VOLTAGE RANGE 6000 to 15000 VOltS CURRENT 550 Amperes FEATURES 25 6.4 FASTOH TESTOML • Controlled Avalancha characteristic combined with the ability to dissipate reverse power
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MIL-STD-202,
550mA
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24v rectifier j8
Abstract: irp740 IRF71Q
Text: International XQR Rectifier PO 9 .1 5 6 2 IRF9410 PRELIMINARY HEXFET Power M O S FET • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V pss = 30V
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IRF9410
24v rectifier j8
irp740
IRF71Q
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Untitled
Abstract: No abstract text available
Text: I NT E RNAT I ONAL bSE RECTIFIER 4Ö55452 D 0017430 71^ I I NR PD-2.279 International H Rectifier 185NQ015 SCHOTTKY RECTIFIER 180 Amp Description/Features Major Ratings and Characteristics Characteristics 185NQ015 Units lF AV Rectangular waveform 180 A VRRM
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185NQ015
185NQ015
-55to100
mec25
554S2
DG17433
D-396
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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diode BYW 66
Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Text: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T
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Untitled
Abstract: No abstract text available
Text: ill H a r r is U U S E M I C O N D U C T O R 2N7311D, 2N7311R 2N731 1H REGISTRATION PENDING Currently Available as FRL9230 D, R, H . • Radiation Hardened P-Channel Power MOSFETs Decem ber 1992 Package Features • 3A, -200V, RDS(on) > 1.300 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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2N7311D,
2N7311R
2N731
FRL9230
O-205AF
-200V,
100KRAD
1000KRAD
3000KRAD
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aval
Abstract: No abstract text available
Text: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
aval
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marking code KC SMB
Abstract: SMBJ25A marking NX TVS DO-214AA smbj0 SMBJ23 SJ 76 TVS dIODE diode GU do-214aA DIODE UF marking code smb marking mp SMBJ12A
Text: TAIWAN SEMICONDUCTOR SMBJ SERIES 600 Watts Surface Mount Transient Voltage Suppressor S MB/DO-214A A RoHS COM PLIANCE Features_ «• For su rfa ce m ou n te d a p p lica tio n <■ L o w p ro file p a c k a g e B u ilt-in s tra in r e lie f
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SMB/DO-214AA
marking code KC SMB
SMBJ25A
marking NX TVS DO-214AA
smbj0
SMBJ23
SJ 76 TVS dIODE
diode GU do-214aA
DIODE UF marking code
smb marking mp
SMBJ12A
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DM 321
Abstract: F320 IRFF320 IRFF321 IRFF322 IRFF323
Text: 1ÛE-D SILICONIX INC Û254735 0014017 4 • IRFF320/321/322/323 • □ r"StlÌCG S ilic o n_ ix J lM ■ in ii c o rp o ra te d N-Channel Enhancement Mode Transistors T - 3 R -O ^ TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF320 " V Id (A
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25H735
RFF320/3217322/323
IRFF320
IRFF321
IRFF322
IRFF323
O-205AF
FF321
FF322
IRFF32
DM 321
F320
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TRANSISTOR ED203
Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Text: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the
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1N2175
TRANSISTOR ED203
FND10
MAN-3A
2N3980
LA 4301
do ic 4532A free
germanium
Germanium drift transistor
texas instruments LED Display TIL
epitaxial mesa
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DIODE S 43a
Abstract: IRF1010N
Text: PD - 9.1372A nternational I O R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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IRF1010NS)
IRF101ONL)
IRF1010NS/L
DIODE S 43a
IRF1010N
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transistor S 8050
Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY
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BYWB05Q
130OC
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
transistor S 8050
ggqb2
8A273
BYW60
Diode BYW 56
150TV
diodes byw
transistor 8050 d
diode BYW 60
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203CNQ
Abstract: No abstract text available
Text: I NTERNATI ONAL RECTIFIER b5E D H 4Û55452 DD17Mbb T14 • I NR PD -2.259 International IIs r ] Rectifier 203c n q . s e r ie s SCHOTTKY RECTIFIER 200 Amp Description/Features Major Ratings and Characteristics Characteristics lF AV Rectangular 203CNQ. Units
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DD17Mbb
203CNQ.
10OApk,
D-432
203CNQ
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DIODE 1334 smd
Abstract: TH 2267 HA 13164 B0139 smd diode 1334
Text: PD-2.178A International Rectifier L io R j i s t . s e r i e s q 18 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics 18TQ. Units lF AV Rectangular waveform 18 A 35 to 45 V VRRM ‘fsm 1P " 5 M#*ne 1800
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TJ-125
volombay400-083.
2F3-30-4
Lane03-09A,
S-16212Valllngby1STO
NJ07650.
DIODE 1334 smd
TH 2267
HA 13164
B0139
smd diode 1334
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50n05
Abstract: SMP50N05 SMP60N05 s0n06 smp60n06 60n05 SMP50N06 60N06 50n06 siliconix SMP50N06-18
Text: lêE I SILICONIX INC <MmW C rS • 8254735 0014173 7 ■ SMP60N06/05, SMP50N06/05 ilì c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BRJDSS SMP60N06 60 0.023 60 SMP60N05 50 0.023 60 SMP50N06
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25473S
GQ14T73
SMP60N06/05,
SMP50N06/05
SMP60N06
SMP60N05
SMP50N06
SMP50N05
O-220AB
60N06
50n05
s0n06
60n05
50n06
siliconix SMP50N06-18
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TT 2246
Abstract: 75HQ 75HQ035 75HQ040 75HQ045 DO-203AB
Text: PD-2.246 International S Rectifier 75h q . s e r ie s SCHOTTKY RECTIFIER 75 Amp Major Ratings and Characteristics Description/Features Characteristics 75HQ. Units lp AV Reoian9ular waveform 75 A 35 to 45 V lFSM tp -5(jssine 9000 A VF 0.63 V -65to175
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75Apk
TJ-125Â
-65to175
D-257
D-258
TT 2246
75HQ
75HQ035
75HQ040
75HQ045
DO-203AB
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D476
Abstract: D-476 i6ctq 16CTQ 16CTQ080 D139 7850a
Text: PD-2.192A International ^ Rectifier i 6Ct q . s e r i e s SCHOTTKY RECTIFIER 16 Amp Description/Features Major Ratings and Characteristics Characteristics 16CTQ. Units *F AV Rectangular waveform 16 A 80 to 100 V Irsm tp-5jjssine 850 A Vp 0.58 V -55 to 175
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16CTQ.
16CTQ
T0-220
D-141
Vd-25
D-142
D476
D-476
i6ctq
16CTQ080
D139
7850a
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IR LFN
Abstract: LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S
Text: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM250 SN7SS5 JANTX2N7225 JANTXV2N72S5 N-CHANNEL REF: MIL-S-1S500/5B&] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International
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MIL-S-19500/59S]
IRFM2500
IRFM250U
O-254
mil-s-195m
IR LFN
LFN ir
D0113
CJ10L
2N7225
IRFM250
2N7225 JANTX
024-S
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k 3919
Abstract: IRFF9230 IRFF9231 IRFF9232 IRFF9233 9231 TU300
Text: SILICONIX INC l&E D « T"Sificor Siliconix J L M • Ö254735 0014Ö45 T ■ 1RFF9230/9231 /Ö232/9233 iiincorporated P-Channel Enhancement Mode Transistors TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS • d S(ON (ft) Id (A) IRFF9230 -200 0.8
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5S4735
1RFF9230/923179232/9233
IRFF9230
IRFF9231
IRFF9232
IRFF9233
SFF92Ã
HFF92!
k 3919
9231
TU300
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 70 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 70 60 V Id 12 A ^DS<on 0.15 £2 Package Ordering Code TO-220 AB C67078-S1334-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
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O-220
C67078-S1334-A2
GPT05155
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SKE4F2
Abstract: diodos SKE2F1 SKE2F rectificadores SK4F SKE4F diodos rectificadores SKE4F1 SKEA 2.5
Text: SE HI KRO N I NC ObE D Û13bt>71 0DG1215 T - O t - Rectifier Diodes for Water Cooling Gleichrichterdioden fürWasserkühlung G | £ 3 Diodes redresseuses à refroidissement par eau with Non-lsolated Water Flow Types V rsm SKW D 7000/02 /04 /06 V rrm Ifrms
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0DG1215
SKWD7000
DO-203
SKR3F20
SKE4F2
diodos
SKE2F1
SKE2F
rectificadores
SK4F
SKE4F
diodos rectificadores
SKE4F1
SKEA 2.5
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