hx8250a
Abstract: HX8678A JIS-K5600 lcd 10.1 Himax touch screen Himax and TOUCH and SCREEN touch panel pin assignment Termination Pin Diagram for Liton Power Supply HX8250 HX8678-A
Text: Messrs. Product Specification Model: MTF-TV57NP721-AV Rev. No. Issued Date. Page. C Feb .12, 08 1 / 29 LIQUID CRYSTAL DISPLAY MODULE MODEL: MTF-TV57NP721-AV Customer’s No.: Acceptance Microtips Technology Inc. 12F. No.31 Lane 169, Kang Ning St., His-Chih, Taipei Hsien, Taiwan
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MTF-TV57NP721-AV
hx8250a
HX8678A
JIS-K5600
lcd 10.1
Himax touch screen
Himax and TOUCH and SCREEN
touch panel pin assignment
Termination Pin Diagram for Liton Power Supply
HX8250
HX8678-A
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MTF-TQ57SN721-AV
Abstract: lcd 10.1 MIL-STD-105e 320RGB HX8615A HX8218 Himax touch screen MTFTQ57SP721-AV Himax 68 MTF-TQ57SP721-AV
Text: Messrs. Product Specification Model: MTF-TQ57SN721-AV Rev. No. Issued Date. Page. A Aug.14, 07 1 / 29 LIQUID CRYSTAL DISPLAY MODULE MODEL: MTF-TQ57SN721-AV Customer’s No.: Acceptance Microtips Technology Inc. 12F. No.31 Lane 169, Kang Ning St., His-Chih, Taipei Hsien, Taiwan
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MTF-TQ57SN721-AV
MTF-TQ57SN721-AV
lcd 10.1
MIL-STD-105e
320RGB
HX8615A
HX8218
Himax touch screen
MTFTQ57SP721-AV
Himax 68
MTF-TQ57SP721-AV
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Untitled
Abstract: No abstract text available
Text: 19-3483; Rev 0; 11/04 KIT ATION EVALU LE B A IL A AV Dual PCI Express, Hot-Plug Controller Ordering Information PART TEMP RANGE PIN-PACKAGE MAX5946AETX -40°C to +85°C 36 Thin QFN MAX5946LETX -40°C to +85°C 36 Thin QFN TOP VIEW 36 35 34 33 32 31 30 29 28
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MAX5946AETX
MAX5946LETX
12VIN
MAX5946
MAX5946
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Untitled
Abstract: No abstract text available
Text: BLF6G10LS-160 Power LDMOS transistor Rev. 01 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10LS-160
BLF6G10LS-160
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350N06L
Abstract: DIODE D29 IPD350N06L F29 SMD d29 smd
Text: IPD350N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS on ,max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated
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IPD350N06L
PG-TO252-3
350N06L
PG-TO252-3:
350N06L
DIODE D29
F29 SMD
d29 smd
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350n06l
Abstract: DIODE D29 diode d29-08 d29 smd GSV102 diode d29-08 12
Text: IPD350N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS on ,max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated
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IPD350N06L
PG-TO252-3-11
350N06L
PIPD350N06L
PG-TO252-3:
350n06l
DIODE D29
diode d29-08
d29 smd
GSV102
diode d29-08 12
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BLF888
Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
BLF888
dvb-t2
j3076
Technical Specifications of DVB-T2 Transmitter
EZ90-25
ttf 103
C4532X7R1E475MT020U
RF35
sot979
EZ90-25-TP
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Untitled
Abstract: No abstract text available
Text: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 01 — 29 March 2010 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-75P;
BLF7G27LS-75P
IS-95
ACPR885k
IS-95
BLF7G27L-75P
BLF7G27LS-75P
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BLF6G22LS-100
Abstract: RF35 TRANSISTOR SMD BV
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF6G22LS-100
BLF6G22LS-100
RF35
TRANSISTOR SMD BV
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DIODE D29
Abstract: 350N06L d29 diode case d29 IPD350N06L PG-TO252-3-11 F29 SMD d29 smd
Text: IPD350N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS on ,max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated
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IPD350N06L
PG-TO252-3-11
350N06L
DIODE D29
350N06L
d29 diode
case d29
PG-TO252-3-11
F29 SMD
d29 smd
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 1 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-150V;
BLF8G27LS-150GV
BLF8G27LS-150V
8G27LS-150GV
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Untitled
Abstract: No abstract text available
Text: BLP7G07S-140P Power LDMOS transistor Rev. 3 — 29 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Test signal
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BLP7G07S-140P
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-100V Power LDMOS transistor Rev. 3 — 29 January 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-100V
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SmD TRANSISTOR a41
Abstract: No abstract text available
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF6G22LS-100
SmD TRANSISTOR a41
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BLF6G22LS-100
Abstract: RF35
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF6G22LS-100
BLF6G22LS-100
RF35
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PG-DSO-20
Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test
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PG-DSO-20
PG-RFP-10
H-34265-8
H-33265-8
H-30248-2
H-36248-2
H-33288-2
H-31248-2
H-37248-2
H-34288-2
PG-DSO-20
a1807
PTFA211801E
H-32259-2
lt 860
PTFA071701GL
ptfa072401fl
1800 ldmos
1805-1880
PTMA210452M
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mitsubishi dc motor control
Abstract: simple circuit motor forward reverse control diagram 100PF M61018GP BF119
Text: MITSUBISHI<AV COMMON> M61018GP PRELIMINARY MOTOR DRIVER FOR CAMERA DESCRIPTION VCH VDD CT VREF NC VAF VWL2 SGND PIN CONFIGURATION M61018GP is a semiconductor integrated circuit built-in motor driver for compact camera. All power transistors which have been used as external parts so
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M61018GP
M61018GP
mitsubishi dc motor control
simple circuit motor forward reverse control diagram
100PF
BF119
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Untitled
Abstract: No abstract text available
Text: BLF6G05LS-200RN Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
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BLF6G05LS-200RN
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Untitled
Abstract: No abstract text available
Text: BLP25M710 Broadband LDMOS driver transistor Rev. 1 — 29 August 2013 Product data sheet 1. Product profile 1.1 General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information
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BLP25M710
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BLV935
Abstract: ferroxcube 4322 ferroxcube tx
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile
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BLV935
OT273
SCDS47
127041/500/01/pp12
BLV935
ferroxcube 4322
ferroxcube tx
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3N06L13
Abstract: ANPS071E IPD50N06S3L-13 PG-TO252-3-11
Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50N06S3L-13
PG-TO252-3-11
3N06L13
3N06L13
ANPS071E
IPD50N06S3L-13
PG-TO252-3-11
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DIODE D29 -08
Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow
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IPB80N06S3L-08
IPI80N06S3L-08,
IPP80N06S3L-08
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
EIA/JESD22-A114-B
SP0000-88128
DIODE D29 -08
3N06L08
D29 -08
d29 08
marking CODE R SMD DIODE
TRANSISTOR SMD MARKING CODE ag
IPB80N06S3L-08
IPI80N06S3L-08
IPP80N06S3L-08
PG-TO263-3-2
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PN06L13
Abstract: Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13
Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50N06S3L-13
PG-TO252-3-11
PN06L13
PN06L13
Application Note ANPS071E
PG-TO252-3-11
Diode d29 08
ANPS071E
IPD50N06S3L-13
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motorola transistor 2N2907A
Abstract: a201 ic transistor av 29 transistor
Text: Semiconductor, Inc. TC57 Series LINEAR REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application
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FZT749
OT23-5
OT-23A
TC57-01
motorola transistor 2N2907A
a201 ic transistor
av 29 transistor
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