ATT220
Abstract: VNB10N07 VNK10N07FM VNP10N07FI VNV10N07
Text: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T YPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ V c lamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I l im 10 10 10 10
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VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
VNB10N07,
VNK10N07FM,
VNV10N07
ATT220
VNB10N07
VNK10N07FM
VNP10N07FI
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Rectifier t2d
Abstract: t2d diodes T2D 53 BYW29 BYW29-200 BYW29F-200 ISOWATT220AC "T2D"
Text: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . VERY LOW FORW ARD LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ HIGH SURGE CURR ENT CAPABILITY ■ HIGH AVALANC HE ENERGY CAPABILITY ■ INSULATED VERSION (ISOW ATT220AC)
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BYW29
ISOWATT220AC)
T0220AC
ISOWATT220AC
T0220AC
BYW29-200
ISOWATT220AC
BYW29F-200
7cJ2ci237
Rectifier t2d
t2d diodes
T2D 53
BYW29-200
BYW29F-200
"T2D"
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ VERY LOW FORWARD LOSSES . ■ ■ ■ NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGYCAPABILITY INSULATED VERSION (ISO W ATT220AC ):
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BYW29
ATT220AC
T0220A
ISOWATT220AC
BYW29-200
BYW29F-200
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ATT220AC
Abstract: BYW80 BYW80-200 BYW80F-200 ISOWATT220AC
Text: SCS-THOMSON BYW80ÇF HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION ISOW ATT220A C ): Insulating voltage = 2000 V DC
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BYW80
ISOWATT220AC)
T0220AC,
ISOWATT220AC
T0220AC
BYW80-200
ATT220AC
BYW80F-200
ATT220AC
BYW80-200
BYW80F-200
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transistor packages sot93
Abstract: No abstract text available
Text: IS O W A T T P A C K A G E S IN F O R M A T IO N S ISO W A TT218 AND ISO W ATT220 EASY TO USE ISO LATED POWER PACKAGES General SGS-THOMSON has developed two isolated pack ages, the ISOW ATT218 and the ISOW ATT220 for use in place of the standard SOT-93/TO-218 and
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TT218
ATT220
ATT218
OT-93/TO-218
O-220
ISOWATT218
transistor packages sot93
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IRF830
Abstract: GC237 IRF830FI IRF 830 IRF831 IRF831FI
Text: 7^237 00HS7Db SÜD • SGTH SCS-THOMSON G IRF830FI IRF831/FI ILlûï^MOûS ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IR F 8 3 0 IR F 8 3 0 F I 500 V 500 V < 1.5 £2 < 1.5 n 4 .5 A 3 A IR F831 IR F 8 3 1 F I 450 V 450 V < 1.5 £2
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00HS7Db
IRF830FI
IRF831/FI
IRF830
IRF830FI
IRF831
IRF831FI
Gl4S71S
IRF830/FI-IRF831/FI
GC237
IRF 830
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HA 1137
Abstract: STP60N05 STP60N05FI
Text: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON l G  L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2
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004b53cÃ
STP60N05
STP60N05FI
STP60N05
STP60N05FI
0G4b54S
STP60N05/FI
5g05970
HA 1137
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IR D4-D4
Abstract: STPS1535F ISOWATT220AC STPS1535D STPS1545D STPS1545F 1545F SEB1
Text: —# SGS-THOMSON k7 w* KfflD g @[iEUl(gTn^®[RiiD s STPS1535D/F STPS1545D/F POWER SCHOTTKY RECTIFIER • ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY
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STPS1535DF
STPS1545D/F
T0220AC
ISOWATT220AC,
ISOWATT220AC
STPS1535D
STPS1535F
STPS1545D
STPS1545F
IR D4-D4
STPS1535F
ISOWATT220AC
STPS1545F
1545F
SEB1
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STP5NA60 STP5NA60FI STP5NA60 STP5NA60FI dss 600 V 600 V R DS on Id < 1.6 a < 1.6 a 5.3 A 3.4 A • TYPICAL RDS(on) = 1 35 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING
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STP5NA60
STP5NA60FI
STP5NA60/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿ 5 SGS-THOMSON ¡mera « 7 STP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING
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STP10NA40
0NA40FI
TP10NA40
TP10N
A40FI
STP10NA40/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: 7^2^237 *rJ 004b3flS ITO • SGTH SGS-THOMSON i[iJOT «§ STP21N05L STP21N05LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V STP21N 05L STP21NQ5LFI . • . . . . • . R D S o n Id < 0.085 n < 0.085 Q 21 A 14 A dss 50 V 50 V TYPICAL Ros(on) = 0.065 Q
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004b3flS
STP21N05L
STP21N05LFI
STP21N
STP21NQ5LFI
004b3Tl
STP21N05L/FI
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N ¡m e ra « ¿ 5 7 S T P 3 N 100 S T P 3 N 1 0 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S T P 3 N 1 00 S T P 3 N 1 00FI . • . . . . R DS on dss 1000 V 1000 V Id < 5 0 < 5 0 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY
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STP3N100/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED
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BUZ11
BUZ11FI
BUZ11/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: 7^2^537 Q045752 4^0 • S C T H SGS-THOMSON m IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI V dss R d S o ii Id 50 V 50 V < 0.028 n < 0.028 £i 50 A 27 A TYPICAL R DS(on) = 0.022 Q AVALAN C H E RUGGED TECHNOLO GY
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Q045752
IRFZ40
IRFZ40FI
O-220
ATT220
IRFZ40/FI
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON [MOigœilLiera *® STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S TP2N A 50 STP2NA 50FI R d S oii 500 V 500 V < 4 a. < 4 0. Id 2 .8 A 2 A Cl • TYPICAL RüS(on) =3.25 ± 30V GATE TO SOURCE VOLTAGE RATING
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STP2NA50
STP2NA50FI
STP2NA50/FI
ATT220
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Untitled
Abstract: No abstract text available
Text: B Y W 2 9 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ATT220AC): Insulating voltage = 2000 V DC
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ISOWATT220AC)
T0-220AC
ISOWATT220AC
ISOWATT220AC
BYW29-200
BYW29F-200
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Untitled
Abstract: No abstract text available
Text: 7 ^ 2 3 7 0D4L50L4 f l t. 3 •SGTH SGS-THOMSON ¡LiOT s«S ¡5 7 STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP 50N 06L STP50N 06LFI V dss R d s ( o ii Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■ TYPICAL RDS(on) = 0.024 Q
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0D4L50L4
STP50N06L
STP50N06LFI
STP50N
06LFI
QCmb510
STP50N06L/FI
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Untitled
Abstract: No abstract text available
Text: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q
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D0MbS32
STP55N06L
STP55N06LFI
STP55N
06LFI
7T2T537
D04b53fl
STP55N06L/FI
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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MTP3N60
MTP3N60FI
MTP3N60/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: rz T ^ 7# V B 921ZV V B 921ZVFI s g s -th o m s o n HIGH VOLTAGE IGNITION COIL DRIVER POWER IC ADVANCE DATA . NO EXTERNAL COMPONENT REQUIRED . INTEGRATED HIGH VOLTAGE CLAMP . COIL CURRENT LIMIT INTERNALLY SET . HIGH RUGGEDNESS DESCRIPTION The VB921ZV and VB921ZVFI are monolithic
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921ZV
921ZVFI
VB921ZV
VB921ZVFI
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Untitled
Abstract: No abstract text available
Text: ¿57 S G S -T H O M S O N ¡m e ra « M TP3055E M T P 3 0 5 5 E FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V MTP3055E M TP3055EFI dss 60 V 60 V R DS on < 0.15 < 0.15 a a Id 14 A 10 A • TYPICAL RDS(on) = 0.1 Q . AVALANCHE RUGGED TECHNOLOGY
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TP3055E
MTP3055E
TP3055EFI
MTP3055E/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY
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STP20N
TP20N10LFI
STP20N10L
STP20N10LFI
ISOWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STP36N
TP36N05LFI
STP36N06L
STP36N06LFI
STP36N06L/FI
ISQWATT220
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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