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    508df

    Abstract: BU508D schematic diagram sgs 508d 508D bu208d datasheet TO-218AC Package transistor BU508D ATT218 BU208D BU508D
    Text: BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED


    Original     		PDF BU208D/508D/508DFI ISOWATT218 E81734 BU208D, BU508D BU508DFI O-218 ISOWATT218 508df BU508D schematic diagram sgs 508d 508D bu208d datasheet TO-218AC Package transistor BU508D ATT218 BU208D

    transistor packages sot93

    Abstract: No abstract text available
    Text: IS O W A T T P A C K A G E S IN F O R M A T IO N S ISO W A TT218 AND ISO W ATT220 EASY TO USE ISO LATED POWER PACKAGES General SGS-THOMSON has developed two isolated pack­ ages, the ISOW ATT218 and the ISOW ATT220 for use in place of the standard SOT-93/TO-218 and


    OCR Scan     		PDF TT218 ATT220 ATT218 OT-93/TO-218 O-220 ISOWATT218 transistor packages sot93

    Untitled

    Abstract: No abstract text available
    Text: Attenuators Type N DC -1 8 GHz Precision Performance Frequency: DC • 18.0 GHz, DC -12.4, and DC - 8.0 units available Attenuation Values: 1 - 60 dB as noted Attenuation Accuracy: 1 - 6 dB ± 0 .3 dB 7 - 20 dB 21 - 40 dB 41 - 60 dB + 0.5 dB + 0.7 dB +1.5 dB


    OCR Scan     		PDF TT-0389-XX-NNN-02 ATT-218F-XX-NNN-02 ATT-218M-XX-NNN-02 ATT-0217-XX-NNN-02 ATT-217F-XX-NNN-02 ATT-217M-XX-NNN-02

    irfp240

    Abstract: irfp240 circuit diagram IRFP240FI 71513 schematic diagram UPS irfp240f
    Text: 2 ^ 5 3 7 0 0 4 S 733 S 3 T • SGTH SCS-THOMSON IRFP240 IRFP240FI ID MaiOT(ö MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP240 IRFP240FI . ■ . . V dss RüS(on) Id 200 V 200 V < 0.18 n < 0.18 Q 20 A 12 A TYPICAL RDS(on) = 0.145 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF 00M5733 IRFP240 IRFP240FI IRFP240 IRFP240FI IRFP240/FI 004S73Ã irfp240 circuit diagram 71513 schematic diagram UPS irfp240f

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E S GS-THOMSON ¡[LiCTIiMOOS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STH 12N A60 STH 12N A60FI STW 12N A60 STH12NA60/FI STW12NA60 dss 600 V 600 V 600 V R DS on Id < 0 .6 Q. < 0 .6 Q. < 0 .6 Q. 12 A 7 A 12 A . TYPICAL R DS(on) = 0.44 Q.


    OCR Scan     		PDF A60FI STH12NA60/FI STW12NA60

    Untitled

    Abstract: No abstract text available
    Text: STW7NA90 STH7NA90FI N - CHANNEL 900V - 1 ,05£2 - 7 A - TO-247/ATT218 _ FAST POWER MOS TRANSISTORS PRELIMINARY DATA TYPE S TW 7N A90 STH7N A90FI V dss RDS on Id 900 V 900 V < 1.3 a < 1.3 a 7 A 4 .7 A TYPICAL R D S (on) = 1 .05 Î2 . ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STW7NA90 STH7NA90FI O-247/ISOWATT218 A90FI ATT218 P025C

    Untitled

    Abstract: No abstract text available
    Text: _ • r r 7 S ^ 7# T G q S g q - T a a ? H a O p g M a S b O B i b ■ _ N B U T 1 3 / 1 3 P /1 3 P F I [« ^ o m tE C T lH M n o S S G S-THOMSON 3QE D HIGH VOLTAGE POWER SWITCH ■ HIGH POWER ■ INTEGRATED SPEED-UP DIODE


    OCR Scan     		PDF BUT13 BUT13P BUT13PFI O-218 ISOWATT218 500ms

    1F42

    Abstract: F424 IF424 F324 tf flyback transformer tv F324-SGSIF324-SGSF424-SGSIF424 SGSF324 SGSF324-SGSIF324-SGSF424-SGSIF424 NPN Transistor 600V TO-220
    Text: 7*35^ 537 a D S q ifc .5 T -1 3 -Î3 6 SG S F324/IF324 SG S F424/IF424 SGS-THOMSON S G S-THOMSON 30E » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • H IG H S W IT C H IN G S P E E D N P N P O W E R TRANSISTO RS ■ HOLLOW EM ITTER TECHNO LO G Y ■ H IG H V O L T A G E FO R O F F -L IN E A P P L IC A ­


    OCR Scan     		PDF SGSF324/IF324 SGSF424/IF424 50kHz 500ms 1F42 F424 IF424 F324 tf flyback transformer tv F324-SGSIF324-SGSF424-SGSIF424 SGSF324 SGSF324-SGSIF324-SGSF424-SGSIF424 NPN Transistor 600V TO-220

    BUT13

    Abstract: BUT13P I3315 5607 transistor BUT13PFI BUT13P equivalent lb 385 IC circuit diagram
    Text: / = T ^ 7# S G S -T H O M S O N M ^ gm [EC T[H «n(gS S G B U T 1 3 / 1 3 P /1 3 P F I S - T HO MS ON 3QE D HIGH VOLTAGE POWER SWITCH • HIGH POWER ■ INTEGRATED SPEED-UP DIODE IN TER N A L S C H EM A TIC DIAG RAM DESC RIPTIO N The BUT13 , BUT13P and BUT13PFI are silicon


    OCR Scan     		PDF BUT13/13P/13PFI BUT13 BUT13P BUT13PFI O-218 ISO-WATT218 ISOWATT218 500ms BUT13 I3315 5607 transistor BUT13P equivalent lb 385 IC circuit diagram

    STH60N05

    Abstract: No abstract text available
    Text: * SGS-THOMSON L[IOT MS r J STH60N05 STH60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N05 STH60N05FI V dss R DS on Id 50 V 50 V 0.023 Ï2 0.023 n 60 A 36 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STH60N05 STH60N05FI ATT218 STH60N05/FI

    TIP418

    Abstract: T1P31C T1P32C tip120 to-220 npn darlington
    Text: SELECTION GUIDE BY PART NUMBER DEVICE TYPE VcEO NPN PNP V ST13005 ST13007 STD909T4 STD910T4 THD200FI THD215HI THD218DHI THD277HI TIP29A TIP29B TIP29C TIP30A TIP30B TIP30C TIP31A T1P31C TIP32A TIP32B TIP32C TIP33A TIP33C TIP34C TIP35C TIP36B TIP36C TIP41A


    OCR Scan     		PDF ST13005 ST13007 STD909T4 TIP42B TIP42C TIP47 TIP48 TIP49 TIP50 TIP100 TIP418 T1P31C T1P32C tip120 to-220 npn darlington

    BUW32A

    Abstract: BUW32AP BUW32 BUW32 equivalent
    Text: SGS-THOMSON * ^ 2m [ I O T ( Q K S B U W 3 2 / 3 2 P /3 2 P F I B U W 3 2 A / 3 2 A P /3 2 A P F I HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUW32/A, BUW32P/AP and BUW32PFI/APFI are silicon multiepitaxial mesa PNP transistors mounted respectively in TO-3 metal case, TO-218


    OCR Scan     		PDF BUW32/A, BUW32P/AP BUW32PFI/APFI O-218 ISOWATT218 O-218 ISOWATT218 32/P/PFI BUW32A BUW32AP BUW32 BUW32 equivalent

    75n06

    Abstract: GC230 GC35 TT218 STH75N06FI
    Text: STH75N06 STH75N06FI SGS-THOMSON ]D ^©|[LlCTi©^ iJ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH75N06 STH75N06FI . . . . . . . . V dss R D S o n 60 V 60 V 0.014 i l 0.014 Sì 75 A 48 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANC HE TESTED


    OCR Scan     		PDF STH75N06 STH75N06FI TH75N06 STH75N06FI O-218 ATT218 SCHEM250 STH75N06/FI 75n06 GC230 GC35 TT218

    IRFP 450 application

    Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
    Text: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5


    OCR Scan     		PDF 450/FI-451/FI 452/FI-453/FI IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI IRFP 450 application IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150

    STH9N80FI

    Abstract: STH9N80 wn s
    Text: 0045^07 EGT • S G T H SGS-THOMSON [M gil(Q iyi(§^(ôMûS STH9N80 STH9N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STH9N80 STH9N80FI ■ ■ . . . ■ . V dss RDS(on) Id 800 V 800 V <1n < 1 £2 9A 5.6 A TYPICAL Rd s m = 0.87 £2 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STH9N80 STH9N80FI STH9N80 STH9N80FI STH9N80/FI wn s

    STH8NA60FI

    Abstract: No abstract text available
    Text: £jï SGS-THOMSON ULKgraMOeS STH8NA60 STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TH 8N A60 S TH 8N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 1 Q. < 1 Q. 8 A 5 A TYPICAL RDS(on) = 0.92 £2 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF A60FI STH8NA60 STH8NA60FI STH8NA60FI

    STH6NA80FI

    Abstract: sth6na80
    Text: £ j ï SGS-THOMSON ULKgraMOeS STH6NA80 STH6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V S TH 6N A80 S TH 6N A80FI • . . . . . . dss 800 V 800 V RDS on Id < 2 .4 Q. < 2 .4 Q. 5 .4 A 3 .4 A TYPICAL R D S (on) = 1.8 £2 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STH6NA80 STH6NA80FI A80FI STH6NA80FI

    STHV82

    Abstract: sthv 82
    Text: £jï 82 82 SGS-THOMSON ULKgraMOeS STHV STHV FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STHV82 S TH V82FI 800 V 800 V • . . . . . . RDS on < 2 0 < 2 0 Id 5 .5 A 3 .6 A TYPICAL RDS(on) = 1 -65 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STHV82 V82FI sthv 82

    15n50

    Abstract: STH15N50 STW15N50 STH15N50FI ISOWATT218
    Text: _71S1237 QG45T2fl T33 • S G T H STH15N50/FI STW15N50 SGS-THOMSON ilIO T « ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH15N50 STH15N50FI STW 15N50 . ■ . . ■ . V dss RDS on Id 500 V 500 V 500 V < 0.4 Î2 < 0.4 n < 0.4 fi 15 A 9 .3 A


    OCR Scan     		PDF 71S1237 QG45T2fl STH15N50/FI STW15N50 STH15N50 STH15N50FI 15N50 15N50 STH15N50/FI-STW15N50 STW15N50 ISOWATT218

    15NA50

    Abstract: No abstract text available
    Text: ¿57 TYP E STH15NA50 STH15NA50FI STW 15NA50 S GS-THOMSON ¡[LiCTIiMOOS STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss RDS on Id 500 V 500 V 500 V < 0.4 a < 0.4 a < 0.4 Q. 14.6 A 9.3 A 14.6 A • TYPICAL RDS(on) = 0.33 Q.


    OCR Scan     		PDF STH15NA50 STH15NA50FI 15NA50 STH15NA50/FI STW15NA50 15NA50

    Untitled

    Abstract: No abstract text available
    Text: ¿57 STH6N100 STH6N100FI SGS-THOMSON ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TH 6N 100 S TH 6N 100FI dss 1000 V 1000 V R DS on Id <20 <20 6 A 3 .7 A . TYPICAL RDs(on) = 1.75 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		PDF STH6N100 STH6N100FI 100FI

    SGSD00030

    Abstract: transistor TE 901 equivalent
    Text: • _ / = ^ 7 7 ^ 5 3 7 ooaw a T S G S -T H O M S O N # Q f f ln o fô m iC T « ! g ■ S G ^ T '3 3 ' Z . 0 _ S D 0 0 0 3 0 /3 1 S G S-THOMSON 3QE /3 1 F I ] HIGH VOLTAGE, HIGH POWER, FAST SWITCHING DESC RIPTIO N The SGSD00030.SGSD00031 and SGSD00031 FI


    OCR Scan     		PDF SGSD00030 SGSD00031 O-218 ISOWATT218 500ms transistor TE 901 equivalent

    equivalent bd439

    Abstract: BUW32A BUW32 BD439 EQUIVALENT 7R2R237 transistor 2Ap BUW32 equivalent ISOWATT218 ISOWATT218 PNP 32PFI
    Text: • QDB6615 5 ■ S C S -T H O M S O N tM Û ^ IL g Û IT [«P @ S S G S-THOMSON 'T 3 '3 - 'Z _ 1 > _ B U W 3 2 / 3 2 P /3 2 P F 1 B U W 3 2 A /3 2 A P /3 2 A P F I 3QE » HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The BUW32/A, BUW32P/AP and BUW32PFI/APFI


    OCR Scan     		PDF BUW32/32P/32PFI BUW32A/32AP/32APFI BUW32/A, BUW32P/AP BUW32PFI/APFI O-218 ISOWATT218 32/P/PFI 500ms equivalent bd439 BUW32A BUW32 BD439 EQUIVALENT 7R2R237 transistor 2Ap BUW32 equivalent ISOWATT218 PNP 32PFI

    Untitled

    Abstract: No abstract text available
    Text: Attenuators Type N DC -1 8 GHz Precision Performance Frequency: DC -18.0 GHz, DC -12.4, and DC - 8.0 units available Attenuation Values: 1 - 60 dB as noted Attenuation Accuracy: 1 - 6 dB +0.3 dB 7 - 20 dB 21 - 40 dB 41 - 60 dB + 0.5 dB + 0.7 dB + 1.5 dB Impedance: so Ohms


    OCR Scan     		PDF DC-18 ATT-0389-XX-NNN-02 ATT-02alue ATT-0559-XX-NNN-07 ATT-559F-XX-NNN-07 4-40U ATT-559M-XX-NNN-07 ATT-0549-XX-NNN-07 ATT-549F-XX-NNN-07 ATT-549M-XX-NNN-07