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    ATF531P8 Search Results

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    ATF531P8 Price and Stock

    Broadcom Limited ATF-531P8-TR1

    RF MOSFET E-PHEMT 4V 8LPCC
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    Broadcom Limited ATF-531P8-BLK

    RF MOSFET E-PHEMT 4V 8LPCC
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    Broadcom Limited ATF-531P8-TR2

    RF MOSFET E-PHEMT 4V 8LPCC
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    ATF531P8 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATF-531P8 Agilent Technologies High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package Original PDF
    ATF-531P8 Avago Technologies Single Voltage E-pHEMT Low Noise +38 dBm OIP3 in LPCC Original PDF
    ATF-531P8-BLK Agilent Technologies Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Original PDF
    ATF-531P8-BLK Agilent Technologies High Linearity Enhancement Mode Pseudomorphic HEMT in 2 x 2 Square (mm) LPCC Package Original PDF
    ATF-531P8-TR1 Agilent Technologies High Linearity Enhancement Mode Pseudomorphic HEMT in 2 x 2 Square (mm) LPCC Package Original PDF
    ATF-531P8-TR1 Agilent Technologies Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Original PDF
    ATF-531P8-TR1 Avago Technologies RF FETs, Discrete Semiconductor Products, IC PHEMT 2GHZ 4V 135MA 8-LPCC Original PDF
    ATF-531P8-TR2 Agilent Technologies Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Original PDF
    ATF-531P8-TR2 Agilent Technologies High Linearity Enhancement Mode Pseudomorphic HEMT in 2 x 2 Square (mm) LPCC Package Original PDF
    ATF-531P8-TR2 Avago Technologies RF FETs, Discrete Semiconductor Products, IC PHEMT 2GHZ 4V 135MA 8-LPCC Original PDF

    ATF531P8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    ATF-531P8

    Abstract: AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89
    Text: Agilent ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a


    Original     		PDF ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89

    ATF-531P8

    Abstract: ATF-521P8 ATF531P8 BCV62B 0805ZC105KATZA RK73H1J68R1F
    Text: Low Noise and High Linearity Applications using the Agilent ATF-531P8 Application Note 1320 Introduction Agilent Technologies’ ATF-531P8 is an enhancement mode PHEMT designed for low noise and high linearity applications. With a noise figure of 1.16 dB and OIP3 of 40 dBm, ATF-531P8 is well suited as a


    Original     		PDF ATF-531P8 ATF-531P8 5988-8237EN ATF-521P8 ATF531P8 BCV62B 0805ZC105KATZA RK73H1J68R1F

    agilent pHEMT transistor

    Abstract: transistor C715 ATF-531P8 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
    Text: Agilent ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used


    Original     		PDF ATF-531P8 ATF-531P8 5988-9545EN agilent pHEMT transistor transistor C715 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package

    150526

    Abstract: sf128
    Text: ATF-531P8 High Linearity Enhancement Mode[1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Description Features Agilent Technologies’s ­­­ATF‑531P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier LPCC [3]


    Original     		PDF ATF-531P8 ATF531P8 5988-8407EN 5988-9990EN 150526 sf128

    03311704

    Abstract: ATF-531P8 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AV02-0845EN 133443 89829 0845en
    Text: ATF-531P8 High Linearity Enhancement Mode[1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Description Features Avago Technologies’ ­­­ATF‑531P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC [3] package.


    Original     		PDF ATF-531P8 ATF531P8 5988-9990EN AV02-0845EN 03311704 ATF-531P8 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 133443 89829 0845en

    ic m 61266

    Abstract: an 17830 MGA-62563 82945 A 68066 1041-64 ic 8279 36.3769 59703 AT-41486
    Text: s-params.txt Spice Parameters - S-params ABA-51563 SP.txt -!ABA-51563 !s-parameters at Vd=5V. Last updated 16/01/03 AR. # GHZ S MA R 50 0.05 0.062 0.1 0.063 0.15 0.063 0.2 0.063 0.25 0.061


    Original     		PDF ABA-51563 ABA-51563 ic m 61266 an 17830 MGA-62563 82945 A 68066 1041-64 ic 8279 36.3769 59703 AT-41486

    ISDB-t modulator

    Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0116EN AV00-0141EN ISDB-t modulator ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316

    AT-41435

    Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
    Text: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 5988-9509EN 5989-0925EN AT-41435 transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC

    Untitled

    Abstract: No abstract text available
    Text: Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and gain • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


    Original     		PDF ATF-531P8 5988-7935EN

    transistor C715

    Abstract: ATF-531P8 ATF531 AN-1222 ATF531P83 ATF-54143 BCV62C fet curtice mesfet fet
    Text: ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high


    Original     		PDF ATF-531P8 AN-1281: ATF-54143 5988-9545EN transistor C715 ATF531 AN-1222 ATF531P83 BCV62C fet curtice mesfet fet

    LNA ku-band

    Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)


    Original     		PDF 11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz

    ATF-531P8

    Abstract: No abstract text available
    Text: Agilent ATF-531P8 Reliability Data Sheet Introduction Reliability Prediction Model The ATF-531P8 is fabricated with Agilent Technologies’ new PHEMT C process. This process has been qualified at wafer level and a similar robustness was observed compared to other


    Original     		PDF ATF-531P8 ATF-531P8 JESD22-A113-A 5988-7962EN

    ATF-531P8

    Abstract: No abstract text available
    Text: ATF-531P8 High Linearity Enhancement Mode[1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Description Features Agilent Technologies’s ­­­ATF‑531P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier LPCC [3]


    Original     		PDF ATF-531P8 ATF531P8 5988-9990EN AV02-0845EN ATF-531P8

    MGA-72543

    Abstract: wimax atwk-wx01 VMMK-1225 ALM-31222 ADA-4789 ALM-42316 3866 transistor ABA-54563 limiters
    Text: AVAGO TECHNOLOGIES WiMAX Designer Kit ATWK-WX01 Contains 3 parts each of the following 32 part numbers: ATF-50189 MGA-30216 MGA-30316 ALM-31222 ALM-31322 ALM-32320 ALM-42216 ALM-42316 MGA-565P8 ABA-54563 ADA-4789 HSMP-3816 HSMP-3866 ATF-54143 ATF-55143 ATF-33143


    Original     		PDF ATWK-WX01) ATF-50189 MGA-30216 MGA-30316 ALM-31222 ALM-31322 ALM-32320 ALM-42216 ALM-42316 MGA-565P8 MGA-72543 wimax atwk-wx01 VMMK-1225 ALM-31222 ADA-4789 ALM-42316 3866 transistor ABA-54563 limiters

    C882 TRANSISTOR

    Abstract: ATF-531P8 Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers
    Text: ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a typical gain of 22 dB


    Original     		PDF ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN C882 TRANSISTOR Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers

    ATF-531P8

    Abstract: ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AMPLI 741 low noise high frequency HEMT from agilent
    Text: ATF-531P8 High Linearity Enhancement Mode[1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Description Features Agilent Technologies’s ­­­ATF‑531P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC [3] package.


    Original     		PDF ATF-531P8 ATF531P8 5988-9990EN AV02-0845EN ATF-531P8 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AMPLI 741 low noise high frequency HEMT from agilent

    ATF-531P8-BLK

    Abstract: ATF-531P8-TR1 ATF-531P8 ATF-531P8-TR2 MO229 0840 057 OIP350 marking 0836 atf531p8 atf531
    Text: Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and gain • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


    Original     		PDF ATF-531P8 5988-8407EN 5988-9990EN ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 0840 057 OIP350 marking 0836 atf531p8 atf531

    LL1608-FSR15J

    Abstract: MCR01J000 IIP31 ATF-531P8 Tower Mounted Amplifiers Schematic 0805ZC105KATZA 0402CG189C9B200 ATF-521P8 BCV62B 630-007
    Text: ATF-531P8 1900 MHz High Linearity Amplifier Application Note 1320 Introduction Avago Technologies’ ATF-531P8 is an enhancement mode PHEMT designed for low noise and high linearity applications. With a noise figure of 1.16 dB and OIP3 of 40 dBm, ATF-531P8


    Original     		PDF ATF-531P8 ATF-531P8 138dBm 43dBm 38dBm LL1608-FSR15J MCR01J000 IIP31 Tower Mounted Amplifiers Schematic 0805ZC105KATZA 0402CG189C9B200 ATF-521P8 BCV62B 630-007

    wn 2308

    Abstract: ATF-531P8 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AT-2 03-rf 048
    Text: Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and gain • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


    Original     		PDF ATF-531P8 5988-7935EN 5988-8407EN wn 2308 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AT-2 03-rf 048