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    ATF101 Price and Stock

    NIC Components Corp NATF101M63V8X10.8KLBYF

    Surface Mount Aluminum Electrolytic Capacitors - Tape and Reel (Alt: NATF101M63V8X10.8K)
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    Avnet Americas NATF101M63V8X10.8KLBYF Reel 14 Weeks 1,500
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    NIC Components Corp NATF101M35V6.3X8NLBYF

    Surface Mount Aluminum Electrolytic Capacitors - Tape and Reel (Alt: NATF101M35V6.3X8NL)
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    Avnet Americas NATF101M35V6.3X8NLBYF Reel 14 Weeks 4,500
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    NIC Components Corp NATF101M16V6.3X6.3NLBYF

    Surface Mount Aluminum Electrolytic Capacitors - Tape and Reel (Alt: NATF101M16V6.3X6.3)
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    Avnet Americas NATF101M16V6.3X6.3NLBYF Reel 13 Weeks 5,000
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    NIC Components Corp NATF101M50V8X10.8NLBYF

    Surface Mount Aluminum Electrolytic Capacitors - Tape and Reel (Alt: NATF101M50V8X10.8N)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NATF101M50V8X10.8NLBYF Reel 14 Weeks 1,500
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    Agilent Technologies Inc ATF-10136-TR1

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    Bristol Electronics ATF-10136-TR1 1,848
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    Quest Components ATF-10136-TR1 1,478
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    ATF-10136-TR1 200
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    Find more ATF101 price and stock on Findchips.com

    ATF101 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ATF-10100 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10100-GP3 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10100-GP3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10135 Avantek 2-12 GHz Low Noise Gallium Arsenide FET Scan PDF
    ATF10135 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF10136 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136-STR Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136-STR Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10136-STR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10136-TR1 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136-TR1 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10136-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10170 Avantek Gallium Arsenide FET Scan PDF
    ATF10170 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    ATF101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATF-10136

    Abstract: gaas fet micro-X Package ATF-10136-STR ATF-10136-TR1 36 Micro-X agilent atf10136 ATF 136
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its


    Original     		PDF ATF-10136 ATF-10136 5965-8701E gaas fet micro-X Package ATF-10136-STR ATF-10136-TR1 36 Micro-X agilent atf10136 ATF 136

    GHZ micro-X Package

    Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
    Text: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250


    Original     		PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100

    ATF-10100

    Abstract: ATF-10100-GP3 ATF10100
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS␣ =␣ 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise


    Original     		PDF ATF-10100 ATF-10100 ATF-10100-GP3 ATF10100

    ATF-10136-TR1

    Abstract: ATF-10136 ATF-10136-STR 36 Micro-X
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its


    Original     		PDF ATF-10136 ATF-10136 ATF-10136-TR1 ATF-10136-STR 36 Micro-X

    NE24483

    Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC


    Original     		PDF S01543 AF367 AF280S 2N2999 2N2415 2N2416 2SA1245 BFQ24 NE59333 BFQ52 NE24483 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119

    Toko inductor 20211

    Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
    Text: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent


    Original     		PDF ATF-21186 ATF-21186, 5962-6875E Toko inductor 20211 AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686

    7804 regulator

    Abstract: AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885
    Text: 4 GHz Television Receive Only LNB Design Application Note A007 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 AN-A001: AN-S005: 5091-8825E 7804 regulator AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


    Original     		PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136

    phemt biasing ATF-36077

    Abstract: atf-36077 low noise design ATF 10136 microstripline ATF-10136 ATF36077 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction Design The Avago Technologies ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF36077 is characterized for use as a low noise amplifier in


    Original     		PDF ATF-36077 ATF36077 AN-G004, ATF-10136, ATF-13284, 5091-9311E 59643854E 5966-0782E phemt biasing ATF-36077 low noise design ATF 10136 microstripline ATF-10136 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band

    atf-41435

    Abstract: 99250 schematic diagram receiver data circuit satellite ATF-10235 5091-8823E
    Text: Design of a 4 GHz LNA for a TVRO System Application Note A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is


    Original     		PDF 5091-8823E 5968-3244E atf-41435 99250 schematic diagram receiver data circuit satellite ATF-10235

    S parameters for ATF 10136

    Abstract: ATF-10136 TSC7662 ATF10136 AN-A002 low noise design ATF 10136 Teledyne Semiconductor NE555
    Text: S-Band Low Noise Amplifier Using the ATF-10136 Application Note G004 ΓO Introduction This application note documents the results of using the ATF-10136 in low noise amplifier applications at S band. The ATF-10136 device is capable of a 0.5 dB noise figure at 2.3 GHz. The ATF-10136 is packaged


    Original     		PDF ATF-10136 5091-9311E 5968-0733E S parameters for ATF 10136 TSC7662 ATF10136 AN-A002 low noise design ATF 10136 Teledyne Semiconductor NE555

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    ATF-10100

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data A TF-10100 F e atu res • L o w N o ise F ig u re : 0.5 dB Typical at 4 GHz • L o w B ia s: Vds = 2V,I ds = 25mA • H igh A sso c ia te d G ain: 14.0 dB Typical at 4 GHz


    OCR Scan     		PDF TF-10100 ATF-10100

    ATF-10135

    Abstract: Avantek 10135 ATF10135 avantek ATF101
    Text: GbE D I AVANTEK INC AVANTEK im n b fa 00G 5% 4 4 | T-31-25 ATF-10135 2-12 GHz Low Noise Gallium Arsenide FET Avantek micro-X Package Features • Low Noise Figure 0.5 dB typical at 4 GHz • Low Bias V d s = 2 V , I d s = 2 0 mA • High Associated Gain


    OCR Scan     		PDF T-31-25 ATF-10135 ATF-10135 Avantek 10135 ATF10135 avantek ATF101

    S parameters for ATF 10136

    Abstract: AVANTEK transistor Avantek atf-1323
    Text: AVANTEK E GE INC D 0AVANTEK im n tb 0D0kiS35 a ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET T'K-^S" Features • • • • • • Avantek 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-10136 0D0kiS35 31O-371-0717or31O-371-8478 S parameters for ATF 10136 AVANTEK transistor Avantek atf-1323

    AVANTEK transistor

    Abstract: No abstract text available
    Text: AVANTEK INC EOE D im iU L . avan tek data sheet OQObâMc? b ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 C T31-2S Avantek Chip Outline Features • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA


    OCR Scan     		PDF ATF-10100 T31-2S AVANTEK transistor

    S parameters for ATF 10136

    Abstract: Hewlett-Packard MICRO-X ATF-10136 ATF10136-STR 8G75
    Text: E S I HEW LETT* WLEM PA C K A R D 0 .5 -1 2 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    OCR Scan     		PDF ATF-10136 ATF-10136 0l057 0l010) 408-G54-8G75 5965-8701E S parameters for ATF 10136 Hewlett-Packard MICRO-X ATF10136-STR 8G75

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    AN-G005

    Abstract: transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202
    Text: r m HEW LETT mL'/LM P A C K A R D Low N oise and M oderate P ow er A m plifiers U sin g th e ATF-21186 Application Note 1064 In tro d u c tio n This application note describes the use of a low cost Gallium Arsenide Field Effect T ransistor GaAs FET designed specifically


    OCR Scan     		PDF ATF-21186 ATF-21186, device40 5962-6875E AN-G005 transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202

    avantek

    Abstract: ATF-10170 Avantek S
    Text: AVANTEK INC 2GE D • data sheet 1141=1 lab OGObflMb 3 ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 AVANTEK T-ll-ZS Avantek 70 mit Package Features • • • • • ■040 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, Ids = 25 mA


    OCR Scan     		PDF ATF-10170 ATF-10170 ADS-1679/10-89 avantek Avantek S

    Untitled

    Abstract: No abstract text available
    Text: 20E D AVANTEK INC 0 AVANTEK • Hi data sheet 1 1 4 1 % ^ QDQhflMb 3 ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 T-S i-ZS Avantek 70 mit Package Features • • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA


    OCR Scan     		PDF ATF-10170 S-1679/10-89

    atf 204

    Abstract: ATF-10100-GP1
    Text: HEWLETT-PACKARD/ Cfl PNTS blE D WIJ}« HEWLETT mLUm PACKARD • 4447504 * Î ST ■ H P A ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET Features • • • • 000^678 Chip Outline Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: VDS = 2 V, IDS = 25 mA


    OCR Scan     		PDF ATF-10100 Total60 atf 204 ATF-10100-GP1

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CHPNTS LIE ]> T O * H EW LETT wHEMPACKARD • H 4 4 7 5A 4 0D[Hflfl3 217 ■ H P A ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET Features 70 mil Package • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, Ids = 25 mA


    OCR Scan     		PDF ATF-10170 TF-10170

    ATF1013

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 F e atu res D escription • Low N oise Figure: 0.5 dB Typical at 4 GHz The ATF-1013 6 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    OCR Scan     		PDF ATF-10136 ATF-1013 ATF1013