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    Kyocera AVX Components 100B5R6CT500XT

    Silicon RF Capacitors / Thin Film 500volts 5.6pF
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    Kyocera AVX Components 100B5R6CT500XT/500P REEL

    Silicon RF Capacitors / Thin Film 500volts 5.6pF
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    TTI 100B5R6CT500XT/500P REEL Reel 1,500 500
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    Kyocera AVX Components 100B5R6CT500XTV

    Silicon RF Capacitors / Thin Film 500V 5.6pF Tol 0.25pF Las Mkg Vertical
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    ATC100B5R6CT500XT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3 PDF

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21100H MRF8S21100HR3 MRF8S21100HSR3 MRF8S21100HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


    Original     		MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		MRF6P23190H MRF6P23190HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-


    Original     		MW7IC915N MW7IC915N MW7IC915NT1 PDF

    81c1000

    Abstract: ATC100B241JT200XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 81c1000 ATC100B241JT200XT PDF

    MRF8P9040N

    Abstract: mrf8p ATC100B820JT RO4350B
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		MRF8P9040N MRF8P9040NR1 MRF8P9040NBR1 728-its MRF8P9040N mrf8p ATC100B820JT RO4350B PDF

    MRF6V10010NR4

    Abstract: AN1955 d2460 A03TK
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		MRF6V10010N MRF6V10010NR4 MRF6V10010NR4 AN1955 d2460 A03TK PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		AFT09MS015N AFT09MS015NT1 PDF

    2508051107Y0

    Abstract: NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		MRF6P24190H MRF6P24190HR6 2508051107Y0 NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B PDF

    250GX-0300-55-22

    Abstract: AN1955 JESD22-A114 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 250GX-0300-55-22 AN1955 JESD22-A114 MRF6S23100H MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors PDF

    EEEFK1H101P

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF6P18190H MRF6P18190HR6 EEEFK1H101P A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100H PDF

    2225x7r225kt3ab

    Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 2225x7r225kt3ab MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHSR6 ATC100B9R1CT500XT PDF

    MRF8S21100HS

    Abstract: MRF8S21100H
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21100H MRF8S21100HR3 MRF8S21100HSR3 2110-2ers, MRF8S21100HS PDF

    k 2645 MOSFET

    Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101 PDF

    j821

    Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 j821 MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to


    Original     		MMRF1006H MMRF1006HR5 MMRF1006HSR5 MMRF1006HR5 PDF

    GRM55DR61H106KA88B

    Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		MRF6P23190H MRF6P23190HR6 GRM55DR61H106KA88B 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6P18190H Rev. 3, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF6P18190H MRF6P18190HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		MRF6P24190H MRF6P24190HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		MRF8P9040N MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 PDF