Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability
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AFT09S200W02N
716lidated
AFT09S200W02NR3
AFT09S200W02GNR3
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mosfet j172
Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S9200N
MRF8S9200NR3
mosfet j172
GRM55DR61H106K
atc100b6r8
J263
J181
ATC100B1R2BT500XT
MRF8S9200N
MRF8S9200NR3
j139
ATC100B100JT500X
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MCR50V107M8X11
Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to
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MRF7S19080H
MRF7S19080HR3
MRF7S19080HSR3
MRF7S19080HR3
MCR50V107M8X11
81c79
A114
A115
AN1955
C101
JESD22
MRF7S19080HSR3
CRCW120610R0FKTA
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for
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MRF6V10250HS
MRF6V10250HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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MRF6P23190H
MRF6P23190HR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with
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MRF8P9300H
MRF8P9300HR6
MRF8P9300HSR6
MRF8P9300HR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21110H
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
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Z25 transistor
Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from
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AFT05MP075N
AFT05MP075NR1
AFT05MP075GNR1
Z25 transistor
ATC800B101JT500XT
Wire Microstrip Line
Z-34
J103 transistor
atc600f150jt250xt
BEAD10
AFT05MP075GNR1
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j292
Abstract: aft23h200-4s2l
Text: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of
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AFT23H200-4S2L
AFT23H200-4S2LR6
j292
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GRM31CR72A105K
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 1, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies
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MRF6V12500H
MRF6V12500HR3
MRF6V12500HSR3
MRF6V12500H
GRM31CR72A105K
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ATC100B390JT500XT
Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with
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MRF8P9300H
MRF8P9300HR6
MRF8P9300HSR6
92ficers,
MRF8P9300H
ATC100B390JT500XT
ATC100B200JT500XT
ATC100B200
ATC100B4R7CT500X
ATC100B100JT500X
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2508051107Y0
Abstract: NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B
Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.
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MRF6P24190H
MRF6P24190HR6
2508051107Y0
NIPPON CAPACITORS
T491D226K025AT
A114
A115
AN1955
C101
JESD22
MRF6P24190HR6
GRM55DR61H106KA88B
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Nippon capacitors
Abstract: MRF6S19120H
Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF6S19120H
IS--95
MRF6S19120HR3
MRF6S19120HSR3
Nippon capacitors
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mcr63
Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21110H
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
mcr63
T491C105K050AT
A114
A115
AN1955
C101
JESD22
MRF7S21110HSR3
mcr63v477m
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C3225X7R2A225KT
Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600H
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
C3225X7R2A225KT
8-30VDC
74C125
UT-141C-25
rf Amplifier mhz Doherty 470-860
Rogers RO4350B microstrip
ATC100B240JT500X
capacitor 104 Z30
470-860 mhz Power amplifier w
ATC-100B-3R0
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250GX-0300-55-22
Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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250GX-0300-55-22
Arlon
AN1955
MRF6VP121KHSR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies
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MMRF1009HR5
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MMRF1009HR5
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21110HSR3
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GRM55DR61H106KA88B
Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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MRF6P23190H
MRF6P23190HR6
GRM55DR61H106KA88B
2508051107Y0
NIPPON CAPACITORS
A114
A115
AN1955
C101
JESD22
MRF6P23190HR6
J3001
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to
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MRF7S19080H
MRF7S19080HR3
MRF7S19080HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7IC21100N Rev. 1, 6/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 to 2170 MHz. This multi-stage
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wimax spectrum mask
Abstract: IRL 1530
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage
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MW7IC2750N
wimax spectrum mask
IRL 1530
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station
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