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    ATC100B3R0BT500XT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9102N MRF8S9102NR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 MRF7S27130HR3

    c5750x7s2a106m

    Abstract: AD255A mosfet mttf aft20p06
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060-4NR3 DataAFT20P060--4N 1/2013Semiconductor, c5750x7s2a106m AD255A mosfet mttf aft20p06

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060 AFT20P060-4NR3 1/2013Semiconductor,

    amplifier MA-920

    Abstract: ATC100B470JT500XT MRF8S9102NR3 MOSFET 355 J314 ATC-100B-3R0 EQUIVALENT FOR J171 ATC100B3R9BT500XT MOSFET IRL arco j314
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9102N MRF8S9102NR3 amplifier MA-920 ATC100B470JT500XT MRF8S9102NR3 MOSFET 355 J314 ATC-100B-3R0 EQUIVALENT FOR J171 ATC100B3R9BT500XT MOSFET IRL arco j314

    2595MHz

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 2595MHz

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S27130HR3 MRF7S27130HSR3 J1567 2595MHz ATC100B3R0BT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 0, 9/2007 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 MRF7S27130HR3 A114 A115 AN1955 C101 JESD22 MRF7S27130HSR3 J1567 2595MHz ATC100B3R0BT500XT

    567 tone

    Abstract: A114 A115 AN1955 C101 JESD22 MRF7S27130HR3 MRF7S27130HSR3 ATC100B3R6BT500XT 2595MHz
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 MRF7S27130HR3 567 tone A114 A115 AN1955 C101 JESD22 MRF7S27130HSR3 ATC100B3R6BT500XT 2595MHz

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 1, 12/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 6.3 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060-4NR3 AFT20P060-4GNR3 AFT20P060-4NR3