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    Kyocera AVX Components 100B220FT500XT

    Silicon RF Capacitors / Thin Film 500volts 22pF 1%
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    ATC100B220FT500XT Datasheets Context Search

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    ATC100B102JP50XT

    Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi
    Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 20ers, MRF6P9220H ATC100B102JP50XT nippon capacitors JESD22 A114 AN1955 ATC100B101JP500XT Nippon chemi PDF

    ATC100B101JT500XT

    Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with


    Original     		MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 ATC100B101JT500XT T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 PDF

    UT-141A-TP

    Abstract: NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		MRFE6P3300H MRFE6P3300HR3 UT-141A-TP NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


    Original     		MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 PDF

    NIPPON CAPACITORS

    Abstract: A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3 MRFE6P3300HR5 30C21 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with


    Original     		MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRFE6P3300HR5 30C21 Nippon chemi PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRFE6P9220H MRFE6P9220HR3 PDF

    Chemi-Con DATE CODES

    Abstract: chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 MRF6P9220HR3 Nippon chemi
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 Chemi-Con DATE CODES chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 Nippon chemi PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		MRFE6P3300H MRFE6P3300HR3 PDF

    nippon capacitors

    Abstract: Nippon chemi
    Text: Document Number: MRF6P9220H Rev. 3, 8/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220H MRF6P9220HR3 MRF6P9220H nippon capacitors Nippon chemi PDF

    J698

    Abstract: NIPPON CAPACITORS Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6P9220HR3 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRFE6P9220H MRFE6P9220HR3 J698 NIPPON CAPACITORS Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6P9220HR3 Nippon chemi PDF

    UT-141C-50-SP

    Abstract: 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H
    Text: Document Number: MRF6P3300H Rev. 2, 10/2008 Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. MRF6P3300HR3 MRF6P3300HR5 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre-


    Original     		MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 UT-141C-50-SP 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H PDF