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NXP Semiconductors MRF6S18100NR1 RF MOSFET LDMOS 28V TO270-4
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MRF6S18100NR1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MRF6S18100NR1		Freescale Semiconductor	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF
MRF6S18100NR1		Freescale Semiconductor	1990MHZ 28V TO270WB4N		Original	PDF

MRF6S18100NR1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C4532X5R1H475MT Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier	Original	PDF	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier	Original	PDF	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 --63ubsidiaries, MRF6S18100NR1
ATC100B0R5BT500XT Abstract: MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 MRF6S18100NR1 A113 A114 A115 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d	Original	PDF	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100NR1 ATC100B0R5BT500XT MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 A113 A114 A115 AN1955
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 0, 12/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	PDF	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100N
600B Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S18100N MRF6S18100NBR1 MRF6S18100NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d	Original	PDF	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 199mployees, MRF6S18100NR1 600B A113 A114 A115 AN1955 C101 JESD22 MRF6S18100N MRF6S18100NBR1
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original	PDF