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    MISCELLANEOUS ATC100A0R4BT150XT

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    American Technical Ceramics Corp ATC100A100FW-150XT

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    American Technical Ceramics Corp ATC100A5R1CP150

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    Bristol Electronics ATC100A5R1CP150 2,195
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    American Technical Ceramics Corp ATC100A820GW150XB

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    American Technical Ceramics Corp ATC100A1R8BW150XT

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    ATC100A Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ATC100A100GTN150X American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    ATC100A100GTN150X American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    ATC100A1R3CW150X American Technical Ceramics Ceramic Capacitor 1.3PF 150V .25PF NONSTND Original PDF
    ATC100A1R3CW150X American Technical Ceramics Ceramic Capacitor 1.3PF 150V .25PF NONSTND Original PDF
    ATC100A6R8KW150X American Technical Ceramics Ceramic Capacitor 6.8PF 150V 10% NONSTND Original PDF
    ATC100A6R8KW150X American Technical Ceramics Ceramic Capacitor 6.8PF 150V 10% NONSTND Original PDF
    ATC100A8R2BW150XT American Technical Ceramics Ceramic Capacitor 8.2PF 150V NONSTND Original PDF
    ATC100A8R2BW150XT American Technical Ceramics Ceramic Capacitor 8.2PF 150V NONSTND Original PDF

    ATC100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DM74SL04

    Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
    Text: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs


    Original     		PDF S2079 SW-109 SWD-119 SW-394 SW-399 OT-26 SW-205 SW-206 SW-215 SW-216 DM74SL04 IC DM74LS04 SW109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419

    transistor b 595

    Abstract: ATC100A PH1819-45
    Text: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System


    Original     		PDF PHl819-45 transistor b 595 ATC100A PH1819-45

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17

    Transistor motorola 513

    Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
    Text: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed


    Original     		PDF TP5002S/D TP5002S TP5002S TP5002S/D* Transistor motorola 513 TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor

    L-Band 1200-1400 MHz

    Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
    Text: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description


    Original     		PDF STAC1214-250 STAC1214-250 STAC265B L-Band 1200-1400 MHz ATC100B390 CR1206-8W ATC100B101 ATC100B910

    Untitled

    Abstract: No abstract text available
    Text: AN11062 Broadband DVB-T UHF power amplifier with the BLF888A Rev. 1 — 30 May 2011 Application note Document information Info Content Keywords BLF888A, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888A.


    Original     		PDF AN11062 BLF888A BLF888A, BLF888A.

    cdma Booster schematic

    Abstract: GRM36cog270J50 GRM36cog330j50 AWT1921 AWT1921S11 SSOP-28 ATC100A4R7CW150X
    Text: AWT1921S11 A Integrated High Power Amp 1610 MHz Advanced Product information Rev 4 DESCRIPTION The AWT1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. The device has been specifically designed for fixed satellite access


    Original     		PDF AWT1921S11 AWT1921 SSOP-28 10ICS, cdma Booster schematic GRM36cog270J50 GRM36cog330j50 AWT1921S11 SSOP-28 ATC100A4R7CW150X

    Untitled

    Abstract: No abstract text available
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928 RF3928280W DS120508

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT09MS031N AFT09MS031NR1 AFT09MS031GNR1 AFT09MS031NR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35020A Rev. 1, 12/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020A MRFG35020AR1

    ATC100A101JW

    Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
    Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology


    Original     		PDF NE5531079A NE5531079A HS350-P3 WS260 IR260 PU10752EJ01V0DS ATC100A101JW ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928B DS120503

    atc100a

    Abstract: JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 TDMA POWER 5509
    Text: Philips Semiconductors 1880 MHz PA Driver with BFG21W 1880 MHz PA Driver with BFG21W Application Note JL-9901v0 Author Jarek Lucek April 9, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in


    Original     		PDF BFG21W JL-9901v0 BFG21W, BFG21W 24dBm, 7E-12 99E-13 atc100a JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ PMBT3904 TDMA POWER 5509

    42756 regulator

    Abstract: 42756 C207 capacitor j146 1300 transistor
    Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PDF PTVA123501EC PTVA123501EC H-36248-2 42756 regulator 42756 C207 capacitor j146 1300 transistor

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928B RF3928B DS120503

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    GaN hemt

    Abstract: power transistor gan s-band air surveillance system diagram using radar
    Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar

    ATC100B620

    Abstract: L22 amplifier Gan hemt transistor RFMD
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD

    transistor 1005 oj

    Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
    Text: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry


    OCR Scan     		PDF PH3135-5S ATC100A transistor 1005 oj transistor power rating 5w ATC100A PH3135-5S PIN07

    GRM36cog270J50

    Abstract: GRM36X7R331K50
    Text: AWT 1922 Integrated High Power Amp 1900 MHz Advanced Product information Rev 3 DESCRIPTION The AWT1922 is a four stage monolithic amplifier for use in communication systems, which require high gain and output intercept point. This device has been specifically designed for PCS multi carrier and


    OCR Scan     		PDF AWT1922 WT1922 GRM36cog270J50 GRM36X7R331K50

    Untitled

    Abstract: No abstract text available
    Text: A t f .MOM m an A M P com pany Radar Pulsed Power Transistor, 20W, lOO^is Pulse, 10% Duty 2.7-3.1 GHz PH2731-20M V2.00 900 £2 bb Features • • • • • • • • 650 C lb 51) NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C on fig u ratio n


    OCR Scan     		PDF PH2731-20M

    6010.5

    Abstract: TT50M50A a2024a
    Text: L3E D 5b422D5 0000031 OMT HAP MICROW AVE PULSED POWER TRANSISTOR PH1214-2.0M PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 - 1 . 4 GHz Operation Common Base Configuration Gold Metallization System


    OCR Scan     		PDF 5b422D5 PH1214-2 A2024A 6010Metallization ATC100A TT50M50A. 6010.5 TT50M50A

    2052-5636-02

    Abstract: No abstract text available
    Text: m an A M P com pany Radar Pulsed Power Transistor, 20W, 100^is Pulse, 10% Duty 3 .1 -3 .5 GHz PH3135-20M Features • NI’ N S ilic o n M ic r o w a v e P o w e r T r a n s is t o r • C o m m o n B a s e C o n fig u r a t io n • B r o a d b a n d C la ss C O p e r a t io n


    OCR Scan     		PDF PH3135-20M TT50M50A ATC100A 2052-5636-02