GaAs S2p
Abstract: hemt .s2p
Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V
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Original
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TGF2023-01
TGF2023-01
DC-18
0007-inch
EAR99
GaAs S2p
hemt .s2p
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PDF
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Untitled
Abstract: No abstract text available
Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V
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Original
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TGF2023-01
TGF2023-01
DC-18
0007-inch
EAR99
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PDF
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MDRD
Abstract: DRD065 at10GHz QF250 DRP25
Text: !お願い 製品によっては守らないと発煙、発火等にいたる可能性のある定格や!注意（保管・使用環境、定格上の注意、実装上の注意、取扱上の注意）を当PDFカタログに記載して おりますので必ずご覧ください。なお、当PDFカタログには、代表的な仕様のみを記載しておりますので、ご注文にあたっては詳細な仕様が記載されている納入仕様書の内容
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Original
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O95J9
O95-9
0240Gp00T
MDRD
DRD065
at10GHz
QF250
DRP25
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PDF
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rf mems switch
Abstract: full automatic Washing machines circuit diagram 2SMES-01-EVBA at10GHz
Text: RF MEMS Switch 2SMES-01 Surface-mount ,10GHz Band typical , Miniature, SPDT - NO, RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical / 8 GHz rated (50Ω) Isolation of 30 dB Insertion loss of 1dB ■ Ultra-miniature 5.2x3.0×1.8 mm (L×W×H).
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Original
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2SMES-01
10GHz
100million
rf mems switch
full automatic Washing machines circuit diagram
2SMES-01-EVBA
at10GHz
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PDF
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hemt .s2p
Abstract: TGF2023-01 EAR99 at10GHz
Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V
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Original
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TGF2023-01
TGF2023-01
DC-18
0007-inch
EAR99
hemt .s2p
EAR99
at10GHz
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PDF
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