Untitled
Abstract: No abstract text available
Text: C3 WMS256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized as256Kx16
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WMS256K16-XXX
256KX16
MIL-STD-883
as256Kx16
l/Cte-16
Ao-17
256K16
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csi-2
Abstract: SM28256Z-25 SM28256Z-35
Text: ÄPR i 5 1931' SHORT SM28256Z June 1990 Preliminary HoduUrTedmologies SM28256Z 2 Mbit 256K x 8 SRAM Module General Description Features The SM28256Z is a high performance, two megabit static RAM module, organized as256K words by 8 bits, in a 60-pin, zigzag in-line package
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SM28256Z
as256K
60-pin,
256KByte
97//////////Z.
csi-2
SM28256Z-25
SM28256Z-35
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EDI84256CS
Abstract: as256
Text: ^EDI EDI84256CS Ele ctro n ic Designs In c . • High Performance Megabit Monolithic SRAM 256Kx4 Monolithic CMOS Static RAM High Speed Features The EDI84256CS is a high speed, high performance, megabit density monolithic Static RAMorganized as256Kx4 bits.
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EDI84256CS
256Kx4
EDI84256CS
as256Kx4
EDI84256LPS,
MIL-STD-883,
EDI84256LPS)
56CS55TB
EDI84256LPS25LB
as256
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la 5405
Abstract: No abstract text available
Text: ÄPR i 5 !W f SHRRT HodularTedinologies SM28256Z June 1990 Preliminary SM28256Z 2 Mbit 256K x 8 SRAM Module General Description Features The SM28256Z is a high performance, two megabit static RAM module, organized as256K words by 8 tuts, in a 60-pin, zigzag in-lire package
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SM28256Z
as256K
60-pin,
256KByte
la 5405
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Untitled
Abstract: No abstract text available
Text: ^ED I _ EDI84256CS Beetronte D»rtgn* Inc. High Performance Megabit Monolithic SRAM 256Kx4 Monolithic CMOS Static RAM High Speed Features The EDI84256CS is a high speed, high performance, megabitdensitymonolithic Static RAMorganized as256Kx4 bits.
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EDI84256CS
256Kx4
EDI84256LPS)
EDI84256CS
as256Kx4
aS17TC
EDI84256CS20TC
EDI84256CS25TC
EDI84256CS35TC
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI84256CS B#ctronlc D*tlgrw Inc. « High Performance Megabit Monolithic SRAM 256Kx4 Monolithic CMOS Static RAM High Speed Features The EDI84256CS is a high speed, high performance, megabit density monolithic Static RAM organized as256Kx4 bits. Inputs and outputs are TTL compatible and allow for
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EDI84256CS
256Kx4
EDI84256CS
as256Kx4
EDI84256LPS,
EDI84256LPS)
EDI84256CS25TC
EDI84256CS35TC
EDI84256LPS17MC
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dg1528
Abstract: 25NJ
Text: ^ E D I _ E D I8M 3 2 2 5 6 C High Speed Eight Megabit SRAM Module Static RAM CMOS, High Speed Module 256KX32 P ^ i U l û i  G W Features The EDI8M32256C is a high speed eight 8 megabit Static RAM module organized as256K words by 32 bits. This
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256KX32
256Kx32
EDI8M32256C
as256K
256Kx4
EDI8M32256C25C6B
EDI8M32256C30C6B
EDI8M32256C35C6B
EDI8M32256C45C6B
dg1528
25NJ
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67S4000A
Abstract: 3D-30 A45 so
Text: mosaic 128KX 3 2 SRAM Module PUMA67S4000/A-45/55/70 semiconductor, inc. Issue 4.0: March 1996 4,194,304 bit CMOS High Speed Static RAM Description The PUMA67S4000/A is a 4Mbit CMOS High Speed Static RAM organised as 128kx 32 in a JEDECJ-leaded Ceramic Surface Mount
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PUMA67S4000/A
128kx
availableare45ns,
55nsand70ns.
44mWAnd
MIL-STD-883
BS9400
PUMA67S4000/A-45/55/70
FastAccessTimesof45/55/70ns.
67S4000A
3D-30
A45 so
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EDI84256CS25TC
Abstract: gh 312 ED184256LPS EDI84256CS EDI84256CS25MC r5 t85 EDI84256CS17MC EDI84256CS20MC EDI84256CS35MC
Text: ELECTRONIC DESIGNS INC 51E D m 3230114 DDODTSfl fl2fl B E L D EDI84256CS Z 1 E D I B*ctronic DMignS Inc. High Performance Megabit Monolithic SRAM 256Kx4 Monolithic CMOS Static RAM High Speed T W 6- 2 3 - > 0 Features The EDI84256CS is a high speed, high performance,
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EDI84256CS
256Kx4
EDI84256CS
as256Kx4
EDI84256LPS,
ED184256L6CS17MC
EDI84256CS20MC
EDI84256CS25MC
EDI84256CS35MC
EDI84256CS25TC
gh 312
ED184256LPS
r5 t85
EDI84256CS17MC
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Untitled
Abstract: No abstract text available
Text: A C Ì ' l AUSTIN SEMICONDUCTOR, INC. AS7E128K32 in c ili 128k x 32 EEPROM EEPROM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View •MIL-STD-883 66 Lead PGA FEATURES • • • • • • Access times o f 120,150,200 ns Built in decoupling caps for low noise
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AS7E128K
MIL-STD-883
as256K
xl6or512K
120ns
150ns
200ns
1FF80H
AS7E128K32
DS000034
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ci 7420
Abstract: No abstract text available
Text: mosaic 128Kx 32 FLASH MODULE PUMA2F4001-15/17/20 Issue4.0: July 1995 semiconductor, inc. Description 4,194,304 bit CMOS FLASH Memory Module The PUMA 2F4001 is a 4 M b it CMOS 5.0V only FLASH memory in a 66 pin ceramic PGA pack age, which is configerable as 8 , 1 6 , 3 2 bit wide
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PUMA2F4001
150ns,
170nsand
200nsareavailable
128Kx
PUMA2F4001-15/17/20
b3S337c
00D24bl
PUMA2F4001MB-15
ci 7420
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC DESIGNS INC ^ E D I 51E D • 3230114 0001235 032 ■ E L D _ E D I 8 4 2 5 6 C S Electronic DMlgra Inc. — — High Performance Megabit Monolithic SRAM 256KX4 Monolithic CMOS Static RAM High Speed
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256KX4
EDI84256CS
as256Kx4
EDI84256LPS,
MIL-STD-883,
EDI84256LPS35NB
EDI84256CS45NB
EDI84256LPS45NB
EDI84256CS55NB
I84256LPS55NB
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Untitled
Abstract: No abstract text available
Text: 128Kx 32 EEPROM Module mosaic PUMA67E4001/A-12/15/17/20 Issue4.2 : June 1996 semiconductor, inc. Description 4,194,304bitCMOS EEPROM Module ThePUMA67E4001/Aisa4MbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of 120,150,170and200nsareavailable.The
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128Kx
PUMA67E4001/A-12/15/17/20
304bitCMOS
ThePUMA67E4001/Aisa4MbitCMOS
170and200nsareavailable
100years.
PUMA67E4001/A-15/17/20
67E4001AMB-15E
MIL-STD-883
128Kx32
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pin configuration ic 7420
Abstract: PUMAS 7420 ic details pinout 7420 pin diagram ic 7420 4007A
Text: /2 ^ < ^ 128Kx 32 EEPROM Module mosaic semiconductor, inc. PUMA67E4007/A-15/17/20/25 Issue4.1 : June 1996 Description Features > The PUMA 67E4007/A is a 4M bit CMOS EEPROM in a JEDEC J-leaded Ceramic Surface Mount Substrate. The output width is user configurable as
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PUMA67E4007/A
16or32
250ns.
100years.
MIL-STD-883.
128Kx
PUMA67E4007/9
7E4007-15/17/20/25
Junel996
67E4007AMB-15
pin configuration ic 7420
PUMAS
7420 ic details
pinout 7420
pin diagram ic 7420
4007A
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27C2000PC
Abstract: No abstract text available
Text: MX27C2000 2M-BIT [256K x8] CMOS EPROM FEATURES • 256Kx 8 organization • Operating current:30mA • Single +5V power supply • Standby current: 100uA • +12.5V programming voltage • Package type: - 32 pin ceramic DIP, plastic DIP - 32 pin SOP - 32 pin PLCC
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MX27C2000
256Kx
100uA
MX27C2000
100uA
45/55ns
ar/16/1999
Apr/27/1999
27C2000PC
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Untitled
Abstract: No abstract text available
Text: ^E D I EDI8F16256C Bvctronic D«algnt inc.— High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs inj-ieaded (SOJ) chip carriers surface-mounted onto
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EDI8F16256C
256Kx16
EDI8F16256C
4096K-bit
256Kx4
intoa256Kx16
512Kx8or1024Kx4
1024Kx4
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Untitled
Abstract: No abstract text available
Text: m D EDI8F16256C \ Electronic D *signs In c.* High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMsinj-leaded(SOJ) chip carriers surface-mounted onto
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EDI8F16256C
256Kx16
EDI8F16256C
4096K-bit
256Kx4
512Kx8or1024Kx4
A0-A17_
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