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APT8030JVFR Price and Stock

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Microchip Technology Inc APT8030JVFR MOSFET N-CH 800V 25A ISOTOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT8030JVFR	Tube	21		1	1 $41.05 10 $41.05 100 $33.3375 1000 $33.3375 10000 $33.3375	Buy Now
Avnet Americas	APT8030JVFR	Tube		32 Weeks	20	1 - 10 - 100 $34.00441 1000 $33.20427 10000 $33.20427	Buy Now
Mouser Electronics	APT8030JVFR		45			1 $41.05 10 $41.05 100 $41.05 1000 $41.05 10000 $41.05	Buy Now
Newark	APT8030JVFR	Bulk			20	1 $41.05 10 $41.05 100 $35.47 1000 $33.34 10000 $33.34	Buy Now
Future Electronics	APT8030JVFR				20	1 - 10 - 100 $35.56 1000 $35.56 10000 $35.56	Buy Now

Microchip Technology Inc	APT8030JVFR	Tube		32 Weeks		1 $41.05 10 $41.05 100 $35.47 1000 $32.53 10000 $31.47	Buy Now
Onlinecomponents.com	APT8030JVFR					1 $39.22 10 $35.09 100 $32.43 1000 $31.95 10000 $31.95	Buy Now
TME	APT8030JVFR				1	1 $59.39 10 $47.23 100 $47.23 1000 $47.23 10000 $47.23	Get Quote
NAC	APT8030JVFR	Tube			9	1 $38.1 10 $38.1 100 $35.09 1000 $32.52 10000 $32.52	Buy Now
Richardson RFPD	APT8030JVFR				20	1 - 10 - 100 $35.22 1000 $35.22 10000 $35.22	Buy Now
Master Electronics	APT8030JVFR					1 $39.22 10 $35.09 100 $32.43 1000 $31.95 10000 $31.95	Buy Now

APT8030JVFR Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT8030JVFR		Advanced Power Technology	POWER MOS V 800V 25A 0.300 Ohm		Original	PDF
APT8030JVFR		Microsemi	Power MOS V FREDFET		Original	PDF

APT8030JVFR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
apt8030jvfr Abstract: No abstract text available Text: APT8030JVFR 25A 0.300Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT8030JVFR OT-227 E145592 apt8030jvfr	PDF
APT8030JVFR Abstract: No abstract text available Text: APT8030JVFR 25A 0.300Ω Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT8030JVFR OT-227 E145592 APT8030JVFR	PDF
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original		PDF
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR	PDF
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60	PDF
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original		PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original		PDF
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR	PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original		PDF
Untitled Abstract: No abstract text available Text: APT8030JVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 25A 0.300Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	APT8030JVFR OT-227 MIL-STD-750	PDF
Untitled Abstract: No abstract text available Text: A d v a n ced P o w er Te c h n o l o g y APT8030JVFR 800V ' POWER MOS V 25A 0.300Í2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	APT8030JVFR OT-227 APT8030JVFR MIL-STD-750 00A/MS, OT-227	PDF
nt 6600 G Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700	OCR Scan	APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr	PDF
8030J Abstract: No abstract text available Text: A P T 8030J V F R • R A dvanced W *Æ POW ER Te c h n o lo g y soov 2sa 0.300Q POWER MOS V FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,	OCR Scan	8030J OT-227 E145592	PDF
8030JV Abstract: No abstract text available Text: A P T 8030JV F R A dvanced PO W ER Te c h n o l o g y POWER MOS V soov 25A 0.300Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	8030JV OT-227 APT8030JVFR E145592	PDF