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Microchip Technology Inc APT50GS60BRDQ2G IGBT NPT 600V 93A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT50GS60BRDQ2G	Tube	8		1	1 $14.54 10 $14.54 100 $14.54 1000 $14.54 10000 $14.54	Buy Now
NAC	APT50GS60BRDQ2G	Tube			60	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	APT50GS60BRDQ2G				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc APT50GS60BRG IGBT NPT 600V 93A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT50GS60BRG	Tube			1,200	1 - 10 - 100 - 1000 - 10000 $9.9	Buy Now
NAC	APT50GS60BRG	Tube			80	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	APT50GS60BRG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microsemi Corporation APT50GS60BRG INSULATED GATE BIPOLAR TRANSISTOR, 93A I(C), 600V V(BR)CES, N-CHANNEL, TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	APT50GS60BRG		14			1 $19.5 10 $19.5 100 $19.5 1000 $19.5 10000 $19.5	Buy Now

APT50GS60BR Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT50GS60BRDLG		Microsemi	Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 50;		Original	PDF
APT50GS60BRDQ2G		Microsemi	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 93A 415W TO247		Original	PDF
APT50GS60BRDQ2G		Microsemi	Insulated Gate Bipolar Transistor - NPT High Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 50;		Original	PDF
APT50GS60BRG		Microsemi	Insulated Gate Bipolar Transistor - NPT High Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 50;		Original	PDF

APT50GS60BR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
welding inverter 100A WITH PFC Abstract: MOSFET welding INVERTER 200A igbt full h bridge 25A apt50gs60brdq2g 600V50A Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low	Original	PDF	APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, welding inverter 100A WITH PFC MOSFET welding INVERTER 200A igbt full h bridge 25A apt50gs60brdq2g 600V50A
welding inverter 200A Abstract: MOSFET welding INVERTER 200A Thunderbolt MIC4452 MOSFET welding INVERTER APT50GS60BRDQ2 Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signiﬁcantly lower turn-on energy Eoff. The low	Original	PDF	APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, welding inverter 200A MOSFET welding INVERTER 200A Thunderbolt MIC4452 MOSFET welding INVERTER
make full-bridge SMPS Abstract: Thunderbolt Thunderbolt IGBT MIC4452 MOSFET welding INVERTER Text: APT50GS60BR G APT50GS60SR(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signiﬁcantly lower turn-on energy Eoff. The low	Original	PDF	APT50GS60BR APT50GS60SR 100kHz, O-247 make full-bridge SMPS Thunderbolt Thunderbolt IGBT MIC4452 MOSFET welding INVERTER
Untitled Abstract: No abstract text available Text: APT50GS60BR G APT50GS60SR(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signi cantly lower turn-on energy Eoff. The low	Original	PDF	APT50GS60BR APT50GS60SR 100kHz, O-247
Untitled Abstract: No abstract text available Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower	Original	PDF	APT50GS60BRDL 100kHz,
Untitled Abstract: No abstract text available Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower	Original	PDF	APT50GS60BRDL 100kHz, O-247
Untitled Abstract: No abstract text available Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low	Original	PDF	APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, circuit016)
single phase igbt based WELDING inverter 200 amps Abstract: MOSFET welding INVERTER 200A MIC4452 600V-50A 600V50A SMPS 30v apt50gs60 Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower	Original	PDF	APT50GS60BRDL 100kHz, single phase igbt based WELDING inverter 200 amps MOSFET welding INVERTER 200A MIC4452 600V-50A 600V50A SMPS 30v apt50gs60
Untitled Abstract: No abstract text available Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower	Original	PDF	APT50GS60BRDL 100kHz, O-247
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF	10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	PDF	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
SOT-227 lead frame Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic	Original	PDF	MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original	PDF