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    APT50GS60SRDQ2 Search Results

    APT50GS60SRDQ2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT50GS60SRDQ2G Microsemi Insulated Gate Bipolar Transistor - NPT High Speed; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 50; Original PDF

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    welding inverter 100A WITH PFC

    Abstract: MOSFET welding INVERTER 200A igbt full h bridge 25A apt50gs60brdq2g 600V50A
    Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, welding inverter 100A WITH PFC MOSFET welding INVERTER 200A igbt full h bridge 25A apt50gs60brdq2g 600V50A

    welding inverter 200A

    Abstract: MOSFET welding INVERTER 200A Thunderbolt MIC4452 MOSFET welding INVERTER APT50GS60BRDQ2
    Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, welding inverter 200A MOSFET welding INVERTER 200A Thunderbolt MIC4452 MOSFET welding INVERTER

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, circuit016)