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    APT502 Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc APT5020BN

    MOSFET N-CH 500V 28A TO247AD
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    Microchip Technology Inc APT5025BN

    MOSFET N-CH 500V 23A TO247AD
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    Microchip Technology Inc APT5022BNG

    MOSFET N-CH 500V 27A TO247AD
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    Microchip Technology Inc APT5020BVRG

    MOSFET N-CH 500V 26A TO247
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    Microchip Technology Inc APT5024SLLG

    MOSFET N-CH 500V 22A D3PAK
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    Mouser Electronics APT5024SLLG
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    APT502 Datasheets (68)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    APT5020 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT5020BLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5020BN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT5020BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 28A TO247AD Original PDF
    APT5020BNF Advanced Power Technology Power MOS IV Scan PDF
    APT5020BNFR Advanced Power Technology Power MOS IV Scan PDF
    APT5020BNR Advanced Power Technology Power MOS IV Scan PDF
    APT5020BV Advanced Power Technology TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,26A I(D),TO-247AD Original PDF
    APT5020BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5020BVFRG Microchip Technology MOSFET N-CH 500V 26A TO247 Original PDF
    APT5020BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5020BVRG Microchip Technology MOSFET N-CH 500V 26A TO247 Original PDF
    APT5020DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT5020HJN Advanced Power Technology N-Channel Enhancement Mode High Voltage Power MOSFETS Scan PDF
    APT5020SLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5020SN Advanced Power Technology N-Channel Enhancement Mode High Voltage Power MOSFETS Scan PDF
    APT5020SVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5020SVFRG Microchip Technology MOSFET N-CH 500V 26A D3PAK Original PDF
    APT5020SVFRG/TR Microchip Technology MOSFET N-CH 500V 26A D3PAK Original PDF
    APT5020SVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT502 Datasheets Context Search

    Catalog Datasheet
    MFG & Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVFR 500V POWER MOS V 22A 0.240Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT5024BVFR O-247 O-247 APT5024BVR PDF

    APT5020BLC

    Abstract: No abstract text available
    Text: APT5020BLC APT5020SLC 500V 26A 0.200Ω POWER MOS VITM BLC D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and


    Original
    APT5020BLC APT5020SLC O-247 O-247 PDF

    APT5024BFLL

    Abstract: APT5024SFLL
    Text: APT5024BFLL APT5024SFLL 500V 22A 0.240Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5024BFLL APT5024SFLL O-247 O-247 APT5024BFLL APT5024SFLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BLL APT5024SLL 500V 22A 0.240Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5024BLL APT5024SLL O-247 O-247 PDF

    APT5024BLL

    Abstract: APT5024SLL
    Text: APT5024BLL APT5024SLL 500V 22A 0.240Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5024BLL APT5024SLL O-247 O-247 APT5024BLL APT5024SLL PDF

    APT5024BVFR

    Abstract: APT5024SVFR
    Text: APT5024BVFR APT5024SVFR 500V POWER MOS V FREDFET 22A 0.240Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT5024BVFR APT5024SVFR O-247 O-247 APT5024BVFR APT5024SVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5028SVR A dvanced po w er Te c h n o l o g y 500V 20A 0.280Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT5028SVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT5024BVR O-247 O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    APT5020HJN E145592 S020HJN OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: O A dvanced P ow er T e c h n o lo g y 9 D APT5027SNR Os POWER MOS IV 500V 20.0A 0.27U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .


    OCR Scan
    APT5027SNR 100mS PDF

    APT5027BVR

    Abstract: No abstract text available
    Text: APT5027BVR r A D VA N C ED • W A P o w er M Te c h n o lo g y * soov 2oa 0.270Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT5027BVR O-247 100Wjis) MIL-STD-750 O-247AD APT5027BVR PDF

    TYC 365

    Abstract: APT5025BN APT5025BNR APT5030BNR
    Text: O s A dvanced P o w er Te c h n o l o g y APT5025BNR APT5030BNR POWER MOS IV® 500V 23.0A 0.25Q 500V 21,0A 0.30£2 AVALANCHE RATED N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol Parameter 'd *DM VGS GSM PD TJ’TSTG


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    APT5025BNR APT5030BNR O-247AD TYC 365 APT5025BN PDF

    C30020

    Abstract: No abstract text available
    Text: APT5028BVR • R A dvanced W .\A pow er Te c h n o lo g y " soov 2oa 0.280Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT5028BVR O-247 C30020 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5020SVFR A dvanced po w er Te c h n o l o g y POWER MOS V‘ 500V 26A 0.200Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT5020SVFR APT5020SVFR PDF

    MJ1210

    Abstract: No abstract text available
    Text: APT5024AVR • R A dvanced W .\A pow er Te c h n o lo g y " soov i8 .s a 0.240q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT5024AVR APT5024AVR IL-STD-750 MJ1210 PDF

    5020BN

    Abstract: 5022BN APT5020BN 5020B APT5022BN APTS022BN APT 5020BN
    Text: A dvanced P o w er Tec h n o lo g y O D O s POWER MOS IV' APT5020BN 500V 28.0A 0.20U APT5022BN 500V 27.0A 0.220 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 5020BN APT 5022BN


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    APT5020BN APT5022BN 5020BN 5022BN APT5020/5022BN O-247AD 5020B APTS022BN APT 5020BN PDF

    APT502

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT5020BVFR 500V POWER MOS V 26A 0.200& l! F R E D F E T Power MOS Vi sa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT5020BVFR O-247 APT5020BVFR O-247AD APT502 PDF

    5027bnr

    Abstract: 5027B
    Text: A d v a n ced P o w er Te c h n o l o g y 8 O D O APT5027BNR 500V 20.0A 0.27U S POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ^DSS A v D ra in -S o u rc e V o lta g e 'd 6 C o n tin u o u s D ra in C u rre n t @ T c - 2 5 °C


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    APT5027BNR 5027B APT5027BNR 5027bnr PDF

    1DOA

    Abstract: 0270A
    Text: APT5027SVR A DVAN CED P o w er Te c h n o lo g y ' soov 20A 0.270a POWER MOSV Power M O S V™ is a new generation of high voltage N-Channe! enhancement mode power M O S FETs. This new technology minimizes the JF E T effect, increases packing density and reduces the on-resistance. Power M O S V™


    OCR Scan
    APT5027SVR 1DOA 0270A PDF

    5025bn

    Abstract: APT5025BN apt4525bn apt4530bn 4525BN apt5025 025Q
    Text: A d van ced P o w er Te c h n o l o g y O D APT5025BN APT4525BN APT5030BN APT4530BN Ô S H? WER MOS IV'03 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Í2 0.30Q 0.30Q N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS


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    APT5025BN APT4525BN APT5030BN APT4530BN 4525BN 5025BN 4530BN 5030BN APT5025/4525/5030/4530BN -247A apt5025 025Q PDF

    c2802

    Abstract: AS1210
    Text: APT5024BVR A dvan ced P o w er Te c h n o l o g y 500v 22A 0.240a POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT5024BVR O-247 00A/fis) O-247AD c2802 AS1210 PDF

    Untitled

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y O D Ô APT5020BNR APT5022BNR S 500V 28.0A 0.20Q 500V 27.0A 0.220 POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS V GS GSM ^ @ Tc A P T 50 22B N R U N IT


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    APT5020BNR APT5022BNR T5020B T5022B O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED W .\A APT5020SVFR pow er Te c h n o l o g y “ soov POWER MOS V 26a 0.200Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT5020SVFR PDF

    APT5020

    Abstract: APT5020JN APT5020JN APT
    Text: A D V A N C E D PO WE R TECHNOLOGY b3E ]> • OESVTO'i Ü G 0 1 1 7 b ßflD * A V P A d van ced P o w er Te c h n o l o g y Q D APT5020JN APT5022JN ISOTOP* 500V 500V 28.0A 0.20ÍJ 27.0A 0.22.Q 5 Û "UL Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE


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    APT5020JN APT5022JN E145592 5020JN 5022JN OT-227 APT5020 APT5020JN APT PDF