TYC 365
Abstract: APT5025BN APT5025BNR APT5030BNR
Text: O s A dvanced P o w er Te c h n o l o g y APT5025BNR APT5030BNR POWER MOS IV® 500V 23.0A 0.25Q 500V 21,0A 0.30£2 AVALANCHE RATED N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol Parameter 'd *DM VGS GSM PD TJ’TSTG
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APT5025BNR
APT5030BNR
O-247AD
TYC 365
APT5025BN
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Untitled
Abstract: No abstract text available
Text: O D O S A dvanced P ow er Tec h n o lo g y APT5025BNR APT5030BNR 500V 23.0A 0.25Q 500V 21 .OA 0.30Î2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS •d V GS GSM PD t j ,t s t g T Parameter APT5025BNR
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APT5025BNR
APT5030BNR
O-247AD
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Untitled
Abstract: No abstract text available
Text: A dvanced O D po w er Te c h n o l o g y APT5025BNR 500V 23.0A 0.25Í2 APT5030BNR 500V 21,0A 0.30Í2 Ô S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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APT5025BNR
APT5030BNR
APT5025BNR
APT5030BNR
O-247AD
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apt5025
Abstract: No abstract text available
Text: O D O S A d va n ced P o w er Te c h n o l o g y * APT5025BNR APT5030BNR 500V 23.0A 0.25Í2 500V 21.0A 0.30Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS V DSS APT5025BNR Parameter Drain-Source Voltage 500 Continuous Drain Current @ Tc
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APT5025BNR
APT5030BNR
APT5025BNR
MIL-STD-750
O-247AD
apt5025
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APT*1002R4BN
Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0
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O-247
APT1001RBN
APT1001R1BN
APT1001RBNR
APT1001R1BNR
APT1001R3BN
APT1001R6BN
APT1002RBN
APT1002R4BN
APT1002RBNR
APT*1002R4BN
APT5040BNF
FREDFET
APT802R4BN
APT5020BNR
APT5085BN
APT5020BNF
APT5025BN
APT6040BNR
APT5085BNF
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Untitled
Abstract: No abstract text available
Text: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =
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APT4020BNR
APT4025BNR
APT4030BNR
APT4040BNR
APT4065BNR
APT4080BNR
APT5020BNR
APT5022BNR
APT5025BNR
APT5027BNR
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APT5085BN
Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
Text: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =
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0000fci3c?
O-247
APT4020BNR
APT4025BNR
APT4030BNR
APT4040BNR
APT4065BNR
APT4080BNR
APT5020BNR
APT5022BNR
APT5085BN
APT4065BN
APT6045BNR
APT5027BN
APT501R1BN
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