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    APT5010B Price and Stock

    Microchip Technology Inc APT5010B2FLLG

    MOSFET N-CH 500V 46A T-MAX
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    DigiKey APT5010B2FLLG Tube 40 1
    • 1 $17.38
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    Avnet Americas APT5010B2FLLG Tube 32 Weeks 40
    • 1 $17.38
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    Mouser Electronics APT5010B2FLLG 3
    • 1 $17.38
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    Newark APT5010B2FLLG Bulk 40
    • 1 $17.38
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    Microchip Technology Inc APT5010B2FLLG
    • 1 $17.38
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    Onlinecomponents.com APT5010B2FLLG
    • 1 $16.87
    • 10 $15.46
    • 100 $14.07
    • 1000 $13.65
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    TME APT5010B2FLLG 1
    • 1 $25.14
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    NAC APT5010B2FLLG Tube 22
    • 1 $16.13
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    • 100 $14.86
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    Avnet Silica APT5010B2FLLG 34 Weeks 40
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    EBV Elektronik APT5010B2FLLG 33 Weeks 40
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    Master Electronics APT5010B2FLLG
    • 1 $16.87
    • 10 $15.46
    • 100 $14.07
    • 1000 $13.65
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    Microchip Technology Inc APT5010B2VRG

    MOSFET N-CH 500V 47A T-MAX
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    DigiKey APT5010B2VRG Tube 30
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    • 100 $18.41
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    Avnet Americas APT5010B2VRG Tube 26 Weeks 30
    • 1 $18.41
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    • 100 $15.89
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    Mouser Electronics APT5010B2VRG 43
    • 1 $17.88
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    Newark APT5010B2VRG Bulk 30
    • 1 $18.41
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    Microchip Technology Inc APT5010B2VRG
    • 1 $18.41
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    • 100 $15.89
    • 1000 $14.59
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    Onlinecomponents.com APT5010B2VRG
    • 1 $17.87
    • 10 $16.37
    • 100 $14.91
    • 1000 $14.46
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    TME APT5010B2VRG 1
    • 1 $26.51
    • 10 $21.18
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    NAC APT5010B2VRG Tube 20
    • 1 $17.09
    • 10 $17.09
    • 100 $15.74
    • 1000 $14.59
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    Avnet Silica APT5010B2VRG 28 Weeks 30
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    EBV Elektronik APT5010B2VRG 27 Weeks 30
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    Master Electronics APT5010B2VRG
    • 1 $17.87
    • 10 $16.37
    • 100 $14.91
    • 1000 $14.46
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    Microchip Technology Inc APT5010B2LLG

    MOSFET N-CH 500V 46A T-MAX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5010B2LLG Tube 40
    • 1 -
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    • 100 $17.02
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    Avnet Americas APT5010B2LLG Tube 26 Weeks 40
    • 1 $17.02
    • 10 $17.02
    • 100 $14.7
    • 1000 $13.8
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    Mouser Electronics APT5010B2LLG
    • 1 $17.02
    • 10 $17.02
    • 100 $14.7
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    Newark APT5010B2LLG Bulk 40
    • 1 $17.02
    • 10 $17.02
    • 100 $14.7
    • 1000 $13.8
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    Microchip Technology Inc APT5010B2LLG
    • 1 $17.02
    • 10 $17.02
    • 100 $14.7
    • 1000 $13.48
    • 10000 $13.05
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    Onlinecomponents.com APT5010B2LLG
    • 1 $16.51
    • 10 $15.13
    • 100 $13.77
    • 1000 $13.36
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    TME APT5010B2LLG 1
    • 1 $24.62
    • 10 $19.58
    • 100 $19.58
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    NAC APT5010B2LLG Tube 22
    • 1 $15.79
    • 10 $15.79
    • 100 $14.54
    • 1000 $13.48
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    Master Electronics APT5010B2LLG
    • 1 $16.51
    • 10 $15.13
    • 100 $13.77
    • 1000 $13.36
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    ADVA APT5010B2LL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components APT5010B2LL 2,456
    • 1 $19.575
    • 10 $19.575
    • 100 $19.575
    • 1000 $13.05
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    Microchip Technology Inc APT5010B2VFRG

    Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME APT5010B2VFRG 1
    • 1 $31.5
    • 10 $25.1
    • 100 $25.1
    • 1000 $25.1
    • 10000 $25.1
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    APT5010B Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT5010B2 Advanced Power Technology Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Original PDF
    APT5010B2FLL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010B2FLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2FLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5010B2FLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 46A T-MAX Original PDF
    APT5010B2FLLG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 46A T-MAX Original PDF
    APT5010B2L Advanced Power Technology 500V 46A 0.100Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT5010B2LC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2LC Advanced Power Technology POWER MOS VI 500V 47A 0.100 Ohm Original PDF
    APT5010B2LL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010B2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT5010B2LLG Microsemi Power MOSFET; Package: T-MAX [B2]; ID (A): 46; RDS(on) (Ohms): 0.1; BVDSS (V): 500; Original PDF
    APT5010B2VFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2VRG Microchip Technology MOSFET N-CH 500V 47A T-MAX Original PDF

    APT5010B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT5010

    Abstract: APT5010LFLL
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-247 APT5010 APT5010LFLL

    MOS 4362

    Abstract: No abstract text available
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-247 MOS 4362

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT5010B2LL APT5010LLL O-247

    APT5010B2LL

    Abstract: APT5010LLL
    Text: APT5010B2LL APT5010LLL 500V 46A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-264 O-247 APT5010B2LL APT5010LLL

    c9015

    Abstract: APT5010B2FLL APT5010LFLL 0460F TR4010
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-264 O-247 c9015 APT5010B2FLL APT5010LFLL 0460F TR4010

    APT5010B2VR

    Abstract: No abstract text available
    Text: APT5010B2VR 47A 0.100Ω 500V POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5010B2VR O-247 APT5010B2VR

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2FLC APT5010LFLC 500V 47A 0.100W POWER MOS VITM FREDFET B2FLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5010B2FLC APT5010LFLC O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL APT5010LLL 500V 46A 0.100Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-247

    APT5010 264

    Abstract: MJ1800 APT5010B2LL APT5010LLL
    Text: APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-264 O-247 APT5010 264 MJ1800 APT5010B2LL APT5010LLL

    MOS 4362

    Abstract: No abstract text available
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-264 O-247 MOS 4362

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL APT5010LLL 0.100Ω 500V 46A R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-264 O-247

    transistor bc 102

    Abstract: APT5010B2LC
    Text: APT5010B2LC 500V 47A 0.100 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT5010B2LC transistor bc 102 APT5010B2LC

    APT5010B2VFR

    Abstract: No abstract text available
    Text: APT5010B2VFR 47A 0.100Ω 500V POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5010B2VFR O-247 APT5010B2VFR

    25C2240

    Abstract: APT5010LFLL APT5010B2FLL
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-264 O-247 25C2240 APT5010LFLL APT5010B2FLL

    APT5010LLC

    Abstract: APT5010B2LC
    Text: APT5010B2LC APT5010LLC 500V 47A 0.100W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and


    Original     		PDF APT5010B2LC APT5010LLC O-264 O-264 APT5010 O-247 APT5010LLC APT5010B2LC

    3.5kw pfc

    Abstract: UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc
    Text: APT 0101 By: Denis Grafham IMPROVED POWER MOSFETS BOOST EFFICIENCY IN A 3.5kW SINGLE PHASE PFC IMPROVED POWERMOSFETS BOOST EFFICIENCY IN A 3.5KW SINGLE PHASE PFC Author: Denis Grafham, European Applications, Advanced Power Technology, F-24300 Nontron Abstract:


    Original     		PDF F-24300 NH03054. D-90471 UC1854/UC2854/UC3854 pp171-177, D-90471N 3.5kw pfc UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    ls 7400 n

    Abstract: No abstract text available
    Text: APT5010B2VFR • R A dvanced W .\A pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®


    OCR Scan     		PDF APT5010B2VFR O-247 ls 7400 n

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W .\A APT5010B2VR pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V‘ P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®


    OCR Scan     		PDF APT5010B2VR O-247 APT5010B2VR

    APT5010B

    Abstract: No abstract text available
    Text: • 0 2 5 7 * 10 ^ DÜG22Q2 bTT APT5010B2VR ADVANCED POW ER Te c h n o lo g y 500V 47A 0.100Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF G22Q2 APT5010B2VR MIL-STD-750 APT5010B