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    APT30DF60 Price and Stock

    Microchip Technology Inc APT30DF60HJ

    BRIDGE RECT 1P 600V 60A SOT227
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    APT30DF60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30DF60HJ Microsemi Bridge Rectifiers - Modules, Discrete Semiconductor Products, POWER MODULE FULL BRIDGE SOT-227 Original PDF

    APT30DF60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 30A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~        


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    APT30DF60HJ OT-227) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +


    Original
    APT30DF60HJ OT-227) PDF

    APT77N60JC3

    Abstract: No abstract text available
    Text: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package


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    APT77N60JC3 OT-227 APT77N60JC3 PDF

    APT8014L2FLL

    Abstract: MAX7238
    Text: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT8014L2FLL O-264 O-264 APT8014L2FLL MAX7238 PDF

    APT10026JFLL

    Abstract: No abstract text available
    Text: APT10026JFLL 1000V 30A 0.26 Ω POWER MOS 7 R FREDFET S S 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT10026JFLL OT-227 APT10026JFLL PDF

    7106

    Abstract: data sheet IC 7106 IL 7106 APT8014JFLL
    Text: APT8014JFLL 800V 42A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    APT8014JFLL OT-227 7106 data sheet IC 7106 IL 7106 APT8014JFLL PDF

    APT8014L2FLL

    Abstract: APT8014L2FLLG
    Text: 800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16Ω Ω APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


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    APT8014L2FLL APT8014L2FLLG* O-264 O-264 APT8014L2FLL APT8014L2FLLG PDF

    APT6010LLLG

    Abstract: APT6010B2LL APT6010LLL
    Text: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


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    APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* O-264 APT6010LLLG APT6010B2LL APT6010LLL PDF

    APT6013B2LL

    Abstract: APT6013LLL
    Text: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT6013B2LL APT6013LLL O-264 O-264 O-247 APT6013B2LL APT6013LLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT6017JLL 600V POWER MOS 7 R MOSFET ID 27 2 T- D SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS VDSS S G ® Symbol 0.170Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original
    APT6017JLL OT-227 PDF

    APT5010JLL

    Abstract: No abstract text available
    Text: APT5010JLL 500V 41A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5010JLL APT5010JLL PDF

    DD2030

    Abstract: No abstract text available
    Text: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT6013B2LL APT6013LLL O-264 O-247 DD2030 PDF

    7441

    Abstract: IC 7441 datasheet APT65GP60JDF2
    Text: TYPICAL PERFORMANCE CURVES APT65GP60JDF2 APT65GP60JDF2 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    APT65GP60JDF2 7441 IC 7441 datasheet APT65GP60JDF2 PDF

    APT5016BFLL

    Abstract: APT5016SFLL
    Text: APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5016BFLL APT5016SFLL O-247 O-247 APT5016BFLL APT5016SFLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original
    APT5010B2LL APT5010LLL O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M17JFLL 0.017Ω 300V 135A POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT30M17JFLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5016BFLL APT5016SFLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10026JFLL 1000V 30A 0.28 Ω POWER MOS 7 R FREDFET VDSS ID SO 27 -T 2 "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol D G ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original
    APT10026JFLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.


    Original
    APT77N60BC6 APT77N60SC6 O-247 Diss20 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10021JLL 1000V 37A 0.210Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT10021JLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Dual die (parallel)


    Original
    APT94N60L2C3 APT94N60L2C3G* O-264 APT94N60L2C3 75DQ60 APT30DF60 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT6010JFLL OT-227 PDF

    APT8024B2FLL

    Abstract: APT8024LFLL
    Text: APT8024B2FLL APT8024LFLL 800V 31A 0.260Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT8024B2FLL APT8024LFLL O-264 O-264 APT8024B2FLL APT8024LFLL PDF

    APT6010JLL

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT6010JLL OT-227 APT6010JLL PDF