107563
Abstract: No abstract text available
Text: APT65GP60JDF2 600V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT65GP60JDF2
107563
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7441
Abstract: IC 7441 datasheet APT65GP60JDF2
Text: TYPICAL PERFORMANCE CURVES APT65GP60JDF2 APT65GP60JDF2 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT65GP60JDF2
7441
IC 7441 datasheet
APT65GP60JDF2
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7441
Abstract: IC 7441 datasheet APT65GP60JDF2 tl 7400
Text: APT65GP60JDF2 600V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT65GP60JDF2
Gate-E93)
7441
IC 7441 datasheet
APT65GP60JDF2
tl 7400
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catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance
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APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of
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