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    APT20M45 Price and Stock

    Microchip Technology Inc APT20M45BVRG

    MOSFET N-CH 200V 56A TO247
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    DigiKey APT20M45BVRG Tube 50
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    Mouser Electronics APT20M45BVRG
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    Verical APT20M45BVRG 65 5
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    Microchip Technology Inc APT20M45BVRG
    • 1 $10.77
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    Onlinecomponents.com APT20M45BVRG 69
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    TME APT20M45BVRG 1
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    NAC APT20M45BVRG Tube 35
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    Richardson RFPD APT20M45BVRG 50
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    Master Electronics APT20M45BVRG 69
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    Microchip Technology Inc APT20M45SVRG

    MOSFET N-CH 200V 56A D3PAK
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    DigiKey APT20M45SVRG Tube 50
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    Mouser Electronics APT20M45SVRG 53
    • 1 $11.82
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    Microchip Technology Inc APT20M45SVRG
    • 1 $11.82
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    Onlinecomponents.com APT20M45SVRG
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    TME APT20M45SVRG 1
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    NAC APT20M45SVRG Tube 32
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    Master Electronics APT20M45SVRG
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    Microchip Technology Inc APT20M45SVFRG

    MOSFET N-CH 200V 56A D3PAK
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    DigiKey APT20M45SVFRG Tube 40
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    Mouser Electronics APT20M45SVFRG
    • 1 $13.3
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    Microchip Technology Inc APT20M45SVFRG
    • 1 $13.3
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    Onlinecomponents.com APT20M45SVFRG
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    NAC APT20M45SVFRG Tube 28
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    Microchip Technology Inc APT20M45BVFRG

    MOSFET N-CH 200V 56A TO247
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    DigiKey APT20M45BVFRG Tube 50
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    Mouser Electronics APT20M45BVFRG
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    Microchip Technology Inc APT20M45BVFRG
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    NAC APT20M45BVFRG Tube 31
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    APT Semiconductor APT20M45BNR

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    Bristol Electronics APT20M45BNR 1,396
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    Find more APT20M45 price and stock on Findchips.com

    APT20M45 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT20M45BNFR Advanced Power Technology Power MOS IV Scan PDF
    APT20M45BNR Advanced Power Technology Power MOS IV - N-Channel Enhancement Mode Low Voltage Power MOSFETS Scan PDF
    APT20M45BVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45BVFR Advanced Power Technology POWER MOS V 200V 56A 0.045 Ohm Original PDF
    APT20M45BVFRG Microsemi Power FREDFET; Package: TO-247 [B]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF
    APT20M45BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45BVR Microsemi Power MOS V MOSFET Original PDF
    APT20M45BVR Philips Semiconductors 4-to-16 line decoder/demultiplexer with input latches Original PDF
    APT20M45BVRG Microsemi Power MOSFET; Package: TO-247 [B]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF
    APT20M45SVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45SVFR Microsemi Power MOS V FREDFET Original PDF
    APT20M45SVFRG Microsemi Power FREDFET; Package: D3 [S]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF
    APT20M45SVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45SVR Microsemi Power MOS V MOSFET Original PDF
    APT20M45SVRG Microsemi Power MOSFET; Package: D3 [S]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF

    APT20M45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT20M45BVR

    Abstract: No abstract text available
    Text: APT20M45BVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M45BVR O-247 O-247 APT20M45BVR

    APT20M45SVFR

    Abstract: No abstract text available
    Text: APT20M45SVFR 200V POWER MOS V 56A 0.045Ω FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M45SVFR APT20M45SVFR

    APT20M45SVFR

    Abstract: No abstract text available
    Text: APT20M45SVFR 56A 0.045Ω 200V POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		PDF APT20M45SVFR MIL-STD-750 APT20M45SVFR

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 56A 0.045Ω 200V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M45BVFR O-247 O-247

    APT20M45B

    Abstract: APT20M45BVR Diode 224
    Text: APT20M45BVR G 200V, 56A, 0.045Ω APT20M45BVR(G) POWER MOS V POWER MOS V® is a new generation of high voltage N-Channel enhancement TO mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves


    Original     		PDF APT20M45BVR O-247 APT20M45B Diode 224

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 200V POWER MOS V 56A 0.045Ω FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M45SVFR

    APT20M45SVR

    Abstract: No abstract text available
    Text: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M45SVR APT20M45SVR

    APT20M45SVR

    Abstract: No abstract text available
    Text: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M45SVR APT20M45SVR

    APT20M45BVFR

    Abstract: No abstract text available
    Text: APT20M45BVFR 200V POWER MOS V 56A 0.045Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M45BVFR O-247 O-247 APT20M45BVFR

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV' 200V 58A 200V 50A 0.045Í2 0.060Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNFR APT20M60BNFR APT20M45/20M60BNFR O-247AD

    20M60BNFR

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV< 200V 58A 200V 50A 0.045Í2 0.060Q A V A LA N C H E RATED FR EDFET N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNFR APT20M60BNFR O-247AD 20M60BNFR

    TL 084L

    Abstract: APT20M45BNR APT20M60BNR 20M60
    Text: A d v a n ced P o w er Te c h n o l o g y O D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV' 58A 50A 0.04512 0.060Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNR APT20M60BNR O-247AD CI00m27 TL 084L 20M60

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y O D O S APT20M45BNR 200V APT20M60BNR 200V 58A 0.04512 50A 0.0600 POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNR APT20M60BNR APT20M45BNR APT20M60BNR MIL-STD-750 773nH, O-247AD

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVFR A dvanced W 7Æ P o w e r Te c h n o lo g y 200V POWER MOSV i 56A 0.0450 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45SVFR MIL-STD-750

    20M60

    Abstract: APT20M60BNFR 20M60BN GD142 APT20M45BNFR BVJ 47 20M60BNFR
    Text: A d v a n ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV® 200V 58A 200V 50A 0.045U 0.060U AVALANCHE RATED FREDFET N-C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS ’d 'dm V GS V GSM PD t j ,t s t g


    OCR Scan     		PDF APT20M45BNFR APT20M60BNFR O-247AD 20M60 20M60BN GD142 BVJ 47 20M60BNFR

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVR A dvanced W 7Æ P o w e r Te c h n o lo g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45SVR

    APT20M40JN

    Abstract: 20M40JN apt20m45j AC3S 20M45
    Text: ADVANCE» POWER TECHNOLOGY b3E I DEiTTCH 000105b Q0 1 • A D VA N C ED PO W ER Te c h n o lo g y • APT20M40JN 200V 77.0A 0.040Q APT20M45JN 200V 73.0A 0.045Q ISOTOP* 5 Û "UL Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP PACKAGE N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 000105b APT20M40JN APT20M45JN E145592 20M40JN 20M45JN apt20m45j AC3S 20M45

    20M60

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y Q D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV* 58A 50A 0.045Í2 0.0600 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNR APT20M60BNR APT20M45/20M60BNR O-247AD GGQm27 20M60

    3055t

    Abstract: diode zd 22
    Text: APT20M45SVFR • R ADVANCED W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT20M45SVFR APT20M45SVFR 3055t diode zd 22

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVFR • R A dvanced W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,


    OCR Scan     		PDF APT20M45BVFR O-247 APT20M45BVFR

    Untitled

    Abstract: No abstract text available
    Text: A dvanced POW ER TECHNOLOGY * O D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV 58A 0.0450 50A 0.0600 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter


    OCR Scan     		PDF APT20M45BNR APT20M60BNR O-247AD APT20M45/20M60BNR

    0502045

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR sBWER MOS IV'01 200V 58A 0.0451» 200V 50A 0.06012 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .


    OCR Scan     		PDF APT20M45BNFR APT20M60BNFR APT20M45BNFR APT20M45/20M60BNFR O-247AD 0502045

    Untitled

    Abstract: No abstract text available
    Text: A dvanced APT20M45BVR pow er Te c h n o lo g y 9 200V 56A 0.045Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45BVR O-247 APT20M45BVR

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45BVR O-247