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    APT20M38 Price and Stock

    Microchip Technology Inc APT20M38BVRG

    MOSFET N-CH 200V 67A TO247
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    DigiKey APT20M38BVRG Tube 44 1
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    Avnet Americas APT20M38BVRG Tube 26 Weeks 40
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    Mouser Electronics APT20M38BVRG
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    Newark APT20M38BVRG Bulk 40
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    Microchip Technology Inc APT20M38BVRG
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    Onlinecomponents.com APT20M38BVRG
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    TME APT20M38BVRG 1
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    NAC APT20M38BVRG Tube 28
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    Microchip Technology Inc APT20M38SVRG

    MOSFET N-CH 200V 67A D3PAK
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    DigiKey APT20M38SVRG Tube 1
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    Avnet Americas APT20M38SVRG Reel 26 Weeks 400
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    APT20M38SVRG Tube 26 Weeks 40
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    APT20M38SVRG Tube 148
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    Mouser Electronics APT20M38SVRG
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    Verical APT20M38SVRG 40 1
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    Arrow Electronics APT20M38SVRG 40 26 Weeks 1
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    Newark APT20M38SVRG Bulk 40
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    Microchip Technology Inc APT20M38SVRG
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    NAC APT20M38SVRG Tube 26
    • 1 $13.72
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    Microchip Technology Inc APT20M38BVFRG

    MOSFET N-CH 200V 67A TO247
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    DigiKey APT20M38BVFRG Tube 36
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    Microchip Technology Inc APT20M38SVFRG

    MOSFET N-CH 200V 67A D3PAK
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    DigiKey APT20M38SVFRG Tube 33
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    Microchip Technology Inc APT20M38SVRG-TR

    MOSFET N-CH 200V 67A D3PAK
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    DigiKey APT20M38SVRG-TR Reel 400
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    APT20M38 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20M38BVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M38BVFR Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT20M38BVFR Advanced Power Technology POWER MOS V 200V 67A 0.038 Ohm Original PDF
    APT20M38BVFR Unknown Power MOS V, 200V 67A, MOS-FET N-Channel enhanced Original PDF
    APT20M38BVFRG Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT20M38BVFRG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 67A TO-247 Original PDF
    APT20M38BVFRG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 67A TO-247 Original PDF
    APT20M38BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M38BVR Microsemi Power MOS V MOSFET Original PDF
    APT20M38BVRG Microsemi Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; Original PDF
    APT20M38HLL Unknown High Voltage, 200V 60A, MOS-FET N-Channel enhanced Original PDF
    APT20M38SVFR Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT20M38SVFR Unknown Power MOS V, 200V 67A, MOS-FET N-Channel enhanced Original PDF
    APT20M38SVFRG Microsemi Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; Original PDF
    APT20M38SVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M38SVR Advanced Power Technology POWER MOS V 200V 67A 0.038 Ohm Original PDF
    APT20M38SVRG Microsemi Power MOSFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; Original PDF
    APT20M38SVRG/TR Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 67A D3PAK Original PDF
    APT20M38SVRG/TR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 67A D3PAK Original PDF

    APT20M38 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT20M38BVFR

    Abstract: APT20M38BVFRG APT20M38SVFR APT20M38SVFRG
    Text: 200V 67A APT20M38BVFR 0.038Ω Ω APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V FREDFET BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,


    Original     		PDF APT20M38BVFR APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* O-247 O-247 APT20M38BVFR APT20M38BVFRG APT20M38SVFR APT20M38SVFRG

    APT20M38BVFR

    Abstract: APT20M38SVFR
    Text: APT20M38BVFR APT20M38SVFR 67A 0.038Ω Ω 200V POWER MOS V FREDFET BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


    Original     		PDF APT20M38BVFR APT20M38SVFR O-247 O-247 APT20M38BVFR 100mS APT20M38SVFR

    Untitled

    Abstract: No abstract text available
    Text: 200V 67A APT20M38BVFR 0.038Ω Ω APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,


    Original     		PDF APT20M38BVFR APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* O-247 O-247

    APT20M38BVR

    Abstract: No abstract text available
    Text: APT20M38BVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M38BVR O-247 O-247 APT20M38BVR

    APT20M38BVFR

    Abstract: No abstract text available
    Text: APT20M38BVFR 200V POWER MOS V 67A 0.038Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M38BVFR O-247 O-247 APT20M38BVFR

    APT20M38BVR

    Abstract: apt20M38
    Text: APT20M38BVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M38BVR O-247 O-247 APT20M38BVR apt20M38

    mosfet 60a 200v

    Abstract: N-channel enhancement 200V 60A 100V 60A Mosfet APT20M38HLL 100V 60A Diode BSC 26 2121 apt20M38 apt20M38H
    Text: APT20M38HLL 200V 60A 0.038Ω R POWER MOS 7 MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT20M38HLL O-258 O-258 APT200 mosfet 60a 200v N-channel enhancement 200V 60A 100V 60A Mosfet APT20M38HLL 100V 60A Diode BSC 26 2121 apt20M38 apt20M38H

    APT20M38BVFR

    Abstract: No abstract text available
    Text: APT20M38BVFR 67A 0.038Ω 200V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		PDF APT20M38BVFR O-247 O-247 APT20M38BVFR

    APT20M38BVR

    Abstract: No abstract text available
    Text: APT20M38BVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M38BVR O-247 O-247 APT20M38BVR

    APT20M38SVR

    Abstract: No abstract text available
    Text: APT20M38SVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M38SVR APT20M38SVR

    APT20M38SVR

    Abstract: No abstract text available
    Text: APT20M38SVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M38SVR APT20M38SVR

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W .\A APT20M38BVR pow er Te c h n o l o g y “ 200V 67a o.o 38q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®


    OCR Scan     		PDF APT20M38BVR O-247

    sm 0038

    Abstract: 0038Q
    Text: A dvanced APT20M38BVR pow er Te c h n o lo g y 200V 67A 0.038Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT20M38BVR O-247 APT20M38BVR sm 0038 0038Q

    diode um 67A

    Abstract: 0038Q
    Text: APT20M38SVR A dvanced P ow er T e c h n o lo g y 9 200V 67A 0.038Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M38SVR APT20M38SVR 00A/ps) M1L-STD-750 diode um 67A 0038Q

    0038Q

    Abstract: No abstract text available
    Text: A dvanced APT20M38SVR pow er Te c h n o lo g y 200V P O W E R 67A 0.038Q M O S V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT20M38SVR APT20M38SVR 0038Q

    Untitled

    Abstract: No abstract text available
    Text: APT20M38BVR A dvanced P o w er Te c h n o l o g y 200V 67A 0.038Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M38BVR O-247 MIL-STD-750 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: APT20M38BVFR A dvanced P o w er Te c h n o l o g y 200V POWER MOS V i 67A 0.038Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M38BVFR O-247 MIL-STD-750 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: APT20M38BVFR A dvanced P o w er Te c h n o l o g y 200V POWER MOS V 67A 0.038Í2 0FREDFET } Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M38BVFR O-247 APT20M38BVFR MIL-STD-750 O-247AD

    4500 MOS

    Abstract: No abstract text available
    Text: APT20M38BVR A dvanced P o w er Te c h n o l o g y 200V 67A 0.038Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M38BVR O-247 APT20M38BVR 00A/ps) O-247AD 4500 MOS

    Untitled

    Abstract: No abstract text available
    Text: APT20M38SVR A dvanced P o w er Te c h n o l o g y 200V 67A 0.038Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M38SVR 10OA/ps) MIL-STD-750

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr