5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
5017BVR
40814
5020BN
1431 T
APT5010LVR
APT1001RBLC
apt10050
APT30M85BVR
APT5020BLC
apt2x101D60
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APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of
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mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT6015LVR
5020bn
APT6011LVFR
arf450
5017bvr
APT2*61D120J
FREDFETs
apt8015jvr
APT100GF60LR
APT5014LVR
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catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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APT50M40
Abstract: No abstract text available
Text: PRODUCTS - Low Loss Power MOSFETs POWER MOS 7TMP W Low Loss MOSFETs E N WITH ALL THE BENEFITS OF POWER MOS V .PLUS Low Gate Charge Low Capacitances Low Loss Conduction & Switching Faster Switching / Lower Switching Losses . The lower capacitances combined with the
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APT10092HLL
APT10088HLL
APT5020HLL
APT5018HLL
APT5016HLL
APT20M40HLL
APT20M38HLL
APT10092ALL
APT5020ALL
APT5018ALL
APT50M40
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Untitled
Abstract: No abstract text available
Text: ARF520 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 125 Volt, 81 MHz Characteristics:
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ARF520
ARF520
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arco 406
Abstract: arco mica trimmer ARF520 700B C11-C13 VK200-4B mosfet class ab rf mica trimmer
Text: ARF520 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 125 Volt, 81 MHz Characteristics:
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ARF520
ARF520
arco 406
arco mica trimmer
700B
C11-C13
VK200-4B
mosfet class ab rf
mica trimmer
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AMPLIFIER 1500w
Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
Text: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1510
40MHz
ARF1510
125lb
AMPLIFIER 1500w
Simple test MOSFET Procedures
Transistor S1D
750w planar transistor
AN 1510
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AMPLIFIER 1500w
Abstract: ARF1510 15VCrss
Text: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1510
40MHz
ARF1510
125lb
AMPLIFIER 1500w
15VCrss
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ARF474
Abstract: mosfet transistor 800 volts.500 amperes Trimmer ARCO
Text: Common Source Push-Pull Pair ARF474 APT D RF G G RF POWER MOSFET S Flange D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF474 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
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ARF474
ARF474
mosfet transistor 800 volts.500 amperes
Trimmer ARCO
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APT MOSFET 1000 VOLTS 8 Amps
Abstract: No abstract text available
Text: APT1003RCLL 1000V 4A 3.00Ω POWER MOS 7 R MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
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APT1003RCLL
O-254
O-25cifications
O-254
APT MOSFET 1000 VOLTS 8 Amps
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arco 406
Abstract: arco mica trimmer ARF521 arco 2.22 pf trimmer 80 watt hf mosfet arco 465 ATC 1nF 700B C11-C13
Text: ARF521 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165V 150W 150MHz The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • Specified 125 Volt, 81MHz Characteristics:
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ARF521
150MHz
ARF521
150MHz.
81MHz
arco 406
arco mica trimmer
arco
2.22 pf trimmer
80 watt hf mosfet
arco 465
ATC 1nF
700B
C11-C13
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APT10030L2VR
Abstract: DSA003669
Text: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10030L2VR
O-264
O-264
APT10030L2VR
DSA003669
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Untitled
Abstract: No abstract text available
Text: APT10030L2VR 0.300Ω 1000V 33A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10030L2VR
O-264
O-264
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Untitled
Abstract: No abstract text available
Text: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10030L2VR
O-264
O-264
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"27 mhz" amp
Abstract: arf15beo 700B ARF1500 ARF1501
Text: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
1525-xx
40MHz
ARF1501
ARF1500
75-380pF
"27 mhz" amp
arf15beo
700B
ARF1500
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ARF1501
Abstract: "27 mhz" amp RF 207 Simple test MOSFET Procedures 700B ARF1500
Text: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
1525-xx
40MHz
ARF1501
ARF1500
"27 mhz" amp
RF 207
Simple test MOSFET Procedures
700B
ARF1500
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ARF 250v 1500w
Abstract: "27 mhz" amp ARF1500
Text: S D S S D S ARF1501 D ARF1500 BeO RF POWER MOSFET 1525-xx G S N - CHANNEL ENHANCEMENT MODE S G S S G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
ARF1500
1525-xx
40MHz
ARF1501
75-380pF
4700pF
ATC700B
C9-C11
ARF 250v 1500w
"27 mhz" amp
ARF1500
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AMPLIFIER 1500w
Abstract: No abstract text available
Text: S D ARF1502 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 65V 1500W 40MHz The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1502
ARF1500
40MHz
ARF1500
AMPLIFIER 1500w
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nt 6600 G
Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700
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APT1201R6BVR
APT1201R5BVR
APT1001RBVR
APT10086BVR
APT8075BVR
APT8065BVR
APT8056BVR
APT6040BVR
APT6035BVR
APT6030BVR
nt 6600 G
APT60M75JVR
APT30M40JVR
APT20M45B
APT50M50JVR
apt12080jvr
130-131
apt5014lvr
APT5020BVFR
apt40m70jvr
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5514f
Abstract: TO220H APT5514 TO-220H
Text: ADVANCED POWER TECHNOL OGY OSE D | QESVTQT □ODDEL.4 □ | T-3^-lV APT6014FN 600V 43A 0.14 Q APT5514FN 550V 43A 0.14 Q POWER MQS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D . 'dm v gs All Ratings: Tc « 25°C unless otherwise specified.
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APT6014FN
APT5514FN
250uA)
Vol320
151ln.
5514f
TO220H
APT5514
TO-220H
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Power MOSFET TT 2146
Abstract: MOSFET TT 2146 TO220H Z59 diode 414x
Text: ADVANCED P O WE R TECHNOLOGY OfiE D | 0257^0^ 4 | , T -2 9-I APT8030FN 800V 29A 0.30 Q APT7530FN 750V 29A 0.30 Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. Symbol Parameter
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APT8030FN
APT7530FN
151ln.
Power MOSFET TT 2146
MOSFET TT 2146
TO220H
Z59 diode
414x
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