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    APPLICATION OF Z44 Search Results

    APPLICATION OF Z44 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    APPLICATION OF Z44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RS-274-D

    Abstract: facit N4000 allen bradley 5572 pclos 40N04 5609 dec BYY10 ABS Wheel Speed Sensor LT 5252 LT 5251
    Text: Allen-Bradley 9/Series CNC Grinder Operation and Programming Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps have been taken


    Original     		PDF UM514A-- RS-274-D facit N4000 allen bradley 5572 pclos 40N04 5609 dec BYY10 ABS Wheel Speed Sensor LT 5252 LT 5251

    allen bradley 8601

    Abstract: g80 n60 allen bradley contactor c60 RS-274-D Lathe spindle report on project of Parking lot system using PLC allen bradley 5572 epson printer m150 SHAFT ENCODER ch 8501 TRANSISTOR SUBSTITUTION
    Text: Allen-Bradley 9/Series CNC Lathe Operation and Programming Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps have been taken to assure that


    Original     		PDF UM511A-- allen bradley 8601 g80 n60 allen bradley contactor c60 RS-274-D Lathe spindle report on project of Parking lot system using PLC allen bradley 5572 epson printer m150 SHAFT ENCODER ch 8501 TRANSISTOR SUBSTITUTION

    western 142c

    Abstract: ge c20f intel 8231 MCS-51 MACRO ASSEMBLER V2.2 854140 1401 intel 83C51FA ASM51 8635 intel 910-555
    Text: APPLICATION BRIEF September 1988 Software Serial Port Implemented with the PCA BETSY JONES ECO APPLICATIONS ENGINEER k lntelorporat~on.1988- I Order Number: 270531-002 lntel Corporation makes no warranty for the use of its products and assurnes no responsibility for any errors which may


    Original     		PDF ACE51, ACE96. ACE180 /TP491/059014M/PE western 142c ge c20f intel 8231 MCS-51 MACRO ASSEMBLER V2.2 854140 1401 intel 83C51FA ASM51 8635 intel 910-555

    MPC5643L

    Abstract: MPC5643L Microcontroller Reference Manual MPC5643LRM mpc5604p SKY BLUE freescale MPC5643L reference manual MPC5643L manual amba ahb bus arbitration AXBS MPC5643L user Manual mpc5643* CMU
    Text: Freescale Semiconductor Application Note Document Number: AN3952 Rev. 0, 10/2009 MPC560xP and MPC564xL Compatibility Transition from MPC5604P to MPC5643L in QFP 144 packages by: Oliver Bibel München, Freescale EMEA The high performance MPC56xxx MCU architecture,


    Original     		PDF AN3952 MPC560xP MPC564xL MPC5604P MPC5643L MPC56xxx MPC564xL MPC5643L Microcontroller Reference Manual MPC5643LRM SKY BLUE freescale MPC5643L reference manual MPC5643L manual amba ahb bus arbitration AXBS MPC5643L user Manual mpc5643* CMU

    Untitled

    Abstract: No abstract text available
    Text: CY62158E MoBL 8-Mbit 1 M x 8 Static RAM 8-Mbit (1 M × 8) Static RAM Features • Very high speed: 45 ns ❐ Wide voltage range: 4.5 V–5.5 V applications. The device also has an automatic power down feature that significantly reduces power consumption. Placing


    Original     		PDF CY62158E

    Untitled

    Abstract: No abstract text available
    Text: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A


    Original     		PDF CY62136ESL I/O15)

    verilog code for matrix multiplication

    Abstract: XAPP611 30274 verilog for 8 point dct in xilinx idct vhdl code vhdl code for matrix multiplication XAPP610 VHDL code DCT dct algorithm verilog code IDCT xilinx
    Text: Application Note: Virtex-II Series R Video Decompression Using IDCT Author: Latha Pillai XAPP611 v1.1 June 25, 2002 Summary This application note describes a two-dimensional Inverse Discrete Cosine Transform (2D IDCT) function implemented on a Xilinx FPGA. The reference design file provides


    Original     		PDF XAPP611 /xapp208 WP113: verilog code for matrix multiplication XAPP611 30274 verilog for 8 point dct in xilinx idct vhdl code vhdl code for matrix multiplication XAPP610 VHDL code DCT dct algorithm verilog code IDCT xilinx

    Untitled

    Abstract: No abstract text available
    Text: CY62157E MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are


    Original     		PDF CY62157E I/O15)

    MPC5643L

    Abstract: mpc5643 MPC5643LRM MPC5643L Microcontroller Reference Manual MPC5604P MPC5643L manual MPC5643L interrupts MPC560XPRM e200 MPC5643L pinout
    Text: Document Number: AN3952 Rev. 0, 10/2009 MPC560xP and MPC564xL Compatibility Transition from MPC5604P to MPC5643L in QFP 144 packages by: Oliver Bibel München, Freescale EMEA The high performance MPC56xxx MCU architecture, which includes the MPC560xP family, now adds the


    Original     		PDF AN3952 MPC560xP MPC564xL MPC5604P MPC5643L MPC56xxx MPC564xL mpc5643 MPC5643LRM MPC5643L Microcontroller Reference Manual MPC5643L manual MPC5643L interrupts MPC560XPRM e200 MPC5643L pinout

    Untitled

    Abstract: No abstract text available
    Text: CY62157E MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are


    Original     		PDF CY62157E I/O15)

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6

    MRF8P29300H

    Abstract: ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6 MRF8P29300H ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT

    Untitled

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE


    Original     		PDF CY62146E I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features


    Original     		PDF CY62158EV30 1024K

    Untitled

    Abstract: No abstract text available
    Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A


    Original     		PDF CY62136EV30 CY62136CV30

    4000 watts power amplifier circuit diagram

    Abstract: 3600 watts power amplifier circuit diagram transistors BC 458 schematic diagram 800 watt power amplifier transistor BC 458 C4532X5R1H475M CRCW08051001FKEA MW7IC3825NBR1 MW7IC3825NR1 A114
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 0, 11/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on - chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage


    Original     		PDF MW7IC3825N MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 4000 watts power amplifier circuit diagram 3600 watts power amplifier circuit diagram transistors BC 458 schematic diagram 800 watt power amplifier transistor BC 458 C4532X5R1H475M CRCW08051001FKEA MW7IC3825NBR1 A114

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage


    Original     		PDF MW7IC3825N MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1

    J209

    Abstract: MW7IC3825GN MW7IC3825GNR1 MW7IC3825NR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage


    Original     		PDF MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 J209 MW7IC3825GN

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,


    Original     		PDF CY62137FV30 CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,


    Original     		PDF CY62137FV30 CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,


    Original     		PDF CY62137FV30 CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30

    Untitled

    Abstract: No abstract text available
    Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137EV30 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A


    Original     		PDF CY62136EV30 CY62136CV30

    Untitled

    Abstract: No abstract text available
    Text: CY62136FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C


    Original     		PDF CY62136FV30 CY62136V, CY62136CV30/CV33, CY62136EV30