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    APM4010N

    Abstract: APM4010 apm*4010n APM4010NU apm*4010 013A1 APM40 A102 STD-020C
    Text: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.


    Original     		APM4010NU 0V/57A, O-252 APM4010N APM4010N APM4010 apm*4010n APM4010NU apm*4010 013A1 APM40 A102 STD-020C PDF

    APM4010N

    Abstract: APM4010 apm*4010n APM4010NU apm*4010 APM40 A102 APM401
    Text: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V G RDS(ON)=13mΩ (typ.) @ VGS=5V • • • D S Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHS


    Original     		APM4010NU 0V/57A, O-252 APM4010N APM4010N APM4010 apm*4010n APM4010NU apm*4010 APM40 A102 APM401 PDF

    APW7181

    Abstract: APM4010 apm*4015p APM4015 APM4010N apm*4010n APM4015P apm*4015
    Text: APW7181 Full-Bridge Inverter Gate Driver Features General Description • Wide Input Voltage Range: 4.5V to 13.2V • Drives a Full-Bridge Inverter High-Side P- The APW7181 is designed to drive two high-side P-channel MOSFETs and two low-side N-channel MOSFETs in a


    Original     		APW7181 APW7181 JESD-22, 100mA APM4010 apm*4015p APM4015 APM4010N apm*4010n APM4015P apm*4015 PDF