to252 footprint wave soldering
Abstract: A102 APM4012N APM4012NU STD-020C apm4012
Text: APM4012NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/55A, RDS ON =9mΩ (typ.) @ VGS=10V RDS(ON)=12mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.
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APM4012NU
0V/55A,
O-252
APM4012N
APM4012N
to252 footprint wave soldering
A102
APM4012NU
STD-020C
apm4012
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apm4018n
Abstract: APM4018 APM4018NU APM-4018 APM40 APM-40
Text: APM4018NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, D RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=9.5mΩ (typ.) @ VGS=4.5V • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices Available
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APM4018NU
0V/60A,
O-252-3
APM4018N
O-252-3
JESD-22,
APM4018
APM4018NU
APM-4018
APM40
APM-40
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apm4018n
Abstract: APM4018 APM4018NU A102 APM-4018
Text: APM4018NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=9.5mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available
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Original
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PDF
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APM4018NU
0V/60A,
O-252
APM4018N
apm4018n
APM4018
APM4018NU
A102
APM-4018
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APM4010N
Abstract: APM4010 apm*4010n APM4010NU apm*4010 013A1 APM40 A102 STD-020C
Text: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.
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Original
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PDF
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APM4010NU
0V/57A,
O-252
APM4010N
APM4010N
APM4010
apm*4010n
APM4010NU
apm*4010
013A1
APM40
A102
STD-020C
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APM4015P
Abstract: apm*4015p apm4015 APM4015PU APM40 apm*4015 STD-020C inverter source code 013A1 DSA0042778
Text: APM4015PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-45A, RDS ON = 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM4015PU
-40V/-45A,
O-252
APM4015P
APM4015P
apm*4015p
apm4015
APM4015PU
APM40
apm*4015
STD-020C
inverter source code
013A1
DSA0042778
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APM4015P
Abstract: apm4015 apm*4015p APM4015PU APM40 apm*4015 STD-020C to 220 229 APM-40
Text: APM4015PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-45A, RDS ON = 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM4015PU
-40V/-45A,
O-252
APM4015P
APM4015P
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
apm4015
apm*4015p
APM4015PU
APM40
apm*4015
STD-020C
to 220 229
APM-40
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APM4015P
Abstract: apm4015 apm*4015p APM4015PU TO252-S 23146 apm*4015 FEB2008
Text: APM4015PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-45A, RDS ON = 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHS
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APM4015PU
-40V/-45A,
O-252
APM4015P
APM4015P
apm4015
apm*4015p
APM4015PU
TO252-S
23146
apm*4015
FEB2008
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APM4017PU
Abstract: APM4017P STD-020C
Text: APM4017PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-40A, RDS ON = 14mΩ (typ.) @ VGS= -10V RDS(ON)= 20mΩ (typ.) @ VGS= -4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM4017PU
-40V/-40A,
O-252
APM4017P
APM4017P
APM4017PU
STD-020C
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APM4012NU
Abstract: 013A1 mosfet 30V 18A TO 252 A102 APM4012N
Text: APM4012NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/55A, RDS ON =9mΩ (typ.) @ VGS=10V RDS(ON)=12mΩ (typ.) @ VGS=5V • • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available
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PDF
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APM4012NU
0V/55A,
O-252
APM4012N
APM4012N
APM4012NU
013A1
mosfet 30V 18A TO 252
A102
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APM4010N
Abstract: APM4010 apm*4010n APM4010NU apm*4010 APM40 A102 APM401
Text: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V G RDS(ON)=13mΩ (typ.) @ VGS=5V • • • D S Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHS
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APM4010NU
0V/57A,
O-252
APM4010N
APM4010N
APM4010
apm*4010n
APM4010NU
apm*4010
APM40
A102
APM401
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APM4018
Abstract: apm4018n APM4018NU APM-4018 A102 A104 A108 B102 JESD-22 APM-40
Text: APM4018NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, D RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=9.5mΩ (typ.) @ VGS=4.5V • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices Available
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APM4018NU
0V/60A,
O-252-3
APM4018N
APM4018N
JESD-22,
APM4018
APM4018NU
APM-4018
A102
A104
A108
B102
JESD-22
APM-40
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apm4015
Abstract: apm*4015 APM4015K APM40
Text: APM4015K P-Channel Enhancement Mode MOSFET Pin Description Features D • -40V/-7.5A, D D D RDS ON =18mΩ (typ.) @ VGS=-10V RDS(ON)=25mΩ (typ.) @ VGS=-4.5V • • • S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available
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APM4015K
-40V/-7
APM4015
JESD-22,
apm*4015
APM4015K
APM40
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APW7181
Abstract: APM4010 apm*4015p APM4015 APM4010N apm*4010n APM4015P apm*4015
Text: APW7181 Full-Bridge Inverter Gate Driver Features General Description • Wide Input Voltage Range: 4.5V to 13.2V • Drives a Full-Bridge Inverter High-Side P- The APW7181 is designed to drive two high-side P-channel MOSFETs and two low-side N-channel MOSFETs in a
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APW7181
APW7181
JESD-22,
100mA
APM4010
apm*4015p
APM4015
APM4010N
apm*4010n
APM4015P
apm*4015
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