9926gm
Abstract: AP9926GM
Text: AP9926GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 BVDSS 20V RDS ON 30mΩ D2 ▼ Capable of 2.5V gate drive D1 D1 ▼ Surface mount package ID G2 SO-8 S1 G1 6A S2 Description D2
|
Original
|
AP9926GM
9926GM
9926gm
AP9926GM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP9926GEO-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS G2 S2 D2 Capable of 2.5V Gate Drive Low Drive Current S2 TSSOP-8 20V RDS ON S1 G1 S1 28m ID D1 4.6A Surface Mount Package
|
Original
|
AP9926GEO-HF
100us
100ms
208oC/W
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP9926GM-HF Halogen-Free Product Advanced Power Electronics Corp. Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Capable of 2.5V Gate Drive D1 D1 ▼ Surface Mount Package BVDSS 20V RDS ON 30mΩ ID G2 6A S2 ▼ RoHS Compliant & Halogen-Free
|
Original
|
AP9926GM-HF
AP9926
100us
100ms
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP9926GM RoHS-compliant Product Advanced Power Electronics Corp. Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D2 D2 Capable of 2.5V gate drive 20V RDS ON D1 D1 Surface mount package 30m ID G2 6A S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the
|
Original
|
AP9926GM
100ms
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9926GM-HF-3 Dual N-channel Enhancement-mode Power MOSFETs Supports Simple Gate Drive down to 2.5V BVDSS 20V Low Gate-charge R DS ON Fast Switching Performance ID 30mΩ 6A RoHS-compliant halogen-free SO-8 package D2 D1 G1 G
|
Original
|
AP9926GM-HF-3
AP4232BGM-HF-3
AP9926
9926GM
|
PDF
|
AP9926GEO
Abstract: No abstract text available
Text: AP9926GEO Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 ▼ Capable of 2.5V gate drive D2 ▼ Low drive current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS ON 28mΩ ID D1 4.6A ▼ Surface mount package
|
Original
|
AP9926GEO
100us
100ms
AP9926GEO
|
PDF
|
AP9926GO
Abstract: No abstract text available
Text: AP9926GO Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 ▼ Capable of 2.5V gate drive D2 ▼ Low drive current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS ON 28mΩ ID D1 4.6A ▼ Surface mount package
|
Original
|
AP9926GO
AP9926GO
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP9926GEO RoHS-compliant Product Advanced Power Electronics Corp. Low On-resistance DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS G2 S2 D2 Capable of 2.5V Gate Drive Low Drive Current S2 20V RDS ON TSSOP-8 S1 G1 S1 28m ID D1 4.6A Surface Mount Package
|
Original
|
AP9926GEO
100us
100ms
208oC/W
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP9926GO Pb Free Plating Product Advanced Power Electronics Corp. Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 D2 Capable of 2.5V gate drive Low drive current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS ON 28m ID D1 4.6A Surface mount package
|
Original
|
AP9926GO
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP9926GEO-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance G2 S2 ▼ Capable of 2.5V Gate Drive D2 ▼ Low Drive Current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS ON 28mΩ ID D1 4.6A ▼ Surface Mount Package
|
Original
|
AP9926GEO-HF
100us
100ms
208oC/W
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9926GEO-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Supports 2.5V Gate Drive D1 Low On-resistance G1 D2 BV DSS 20V R DS ON G2 28mΩ ID RoHS-compliant, halogen-free S1 4.6A S2
|
Original
|
AP9926GEO-HF-3
AP9926
9926GEO
|
PDF
|
ap9926g
Abstract: AP9926GEM
Text: AP9926GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance ▼ Capable of 2.5V gate drive D2 D2 D1 D1 ▼ Low drive current SO-8 20V RDS ON 30mΩ ID G2 S2 ▼ Surface mount package BVDSS
|
Original
|
AP9926GEM
ap9926g
AP9926GEM
|
PDF
|
AP9926GM
Abstract: No abstract text available
Text: AP9926GM RoHS-compliant Product Advanced Power Electronics Corp. Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Capable of 2.5V gate drive D1 D1 ▼ Surface mount package BVDSS 20V RDS ON 30mΩ ID G2 6A S2 SO-8 S1 G1 Description
|
Original
|
AP9926GM
100us
100ms
AP9926GM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP9926GEO RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 ▼ Capable of 2.5V Gate Drive D2 ▼ Low Drive Current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS ON 28mΩ ID D1 4.6A ▼ Surface Mount Package
|
Original
|
AP9926GEO
100us
100ms
208oC/W
|
PDF
|
|
|