Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AP9926GEO Search Results

    AP9926GEO Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AP9926GEO-HF Advanced Power Electronics DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF

    AP9926GEO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AP9926GEO-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS G2 S2 D2 Capable of 2.5V Gate Drive Low Drive Current S2 TSSOP-8 20V RDS ON S1 G1 S1 28m ID D1 4.6A Surface Mount Package


    Original     		PDF AP9926GEO-HF 100us 100ms 208oC/W

    AP9926GEO

    Abstract: No abstract text available
    Text: AP9926GEO Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 ▼ Capable of 2.5V gate drive D2 ▼ Low drive current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS ON 28mΩ ID D1 4.6A ▼ Surface mount package


    Original     		PDF AP9926GEO 100us 100ms AP9926GEO

    Untitled

    Abstract: No abstract text available
    Text: AP9926GEO RoHS-compliant Product Advanced Power Electronics Corp. Low On-resistance DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS G2 S2 D2 Capable of 2.5V Gate Drive Low Drive Current S2 20V RDS ON TSSOP-8 S1 G1 S1 28m ID D1 4.6A Surface Mount Package


    Original     		PDF AP9926GEO 100us 100ms 208oC/W

    Untitled

    Abstract: No abstract text available
    Text: AP9926GEO-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance G2 S2 ▼ Capable of 2.5V Gate Drive D2 ▼ Low Drive Current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS ON 28mΩ ID D1 4.6A ▼ Surface Mount Package


    Original     		PDF AP9926GEO-HF 100us 100ms 208oC/W

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP9926GEO-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Supports 2.5V Gate Drive D1 Low On-resistance G1 D2 BV DSS 20V R DS ON G2 28mΩ ID RoHS-compliant, halogen-free S1 4.6A S2


    Original     		PDF AP9926GEO-HF-3 AP9926 9926GEO

    Untitled

    Abstract: No abstract text available
    Text: AP9926GEO RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 ▼ Capable of 2.5V Gate Drive D2 ▼ Low Drive Current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS ON 28mΩ ID D1 4.6A ▼ Surface Mount Package


    Original     		PDF AP9926GEO 100us 100ms 208oC/W