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    AO34 Price and Stock

    Alpha & Omega Semiconductor AO3420

    MOSFET N-CH 20V 6A SOT23-3L
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    DigiKey AO3420 Digi-Reel 803,470 1
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    Alpha & Omega Semiconductor AO3414

    MOSFET N-CH 20V 3A SOT23-3L
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    Alpha & Omega Semiconductor AO3442

    MOSFET N-CH 100V 1A SOT23-3L
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    DigiKey AO3442 Cut Tape 159,184 1
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    AO3442 Digi-Reel 159,184 1
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    Alpha & Omega Semiconductor AO3418

    MOSFET N-CH 30V 3.8A SOT23-3L
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    DigiKey AO3418 Reel 87,000 3,000
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    Component Electronics, Inc AO3418 21
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    Win Source Electronics AO3418 173,000
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    Alpha & Omega Semiconductor AO3434A

    MOSFET N-CH 30V 4A SOT23-3L
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    DigiKey AO3434A Digi-Reel 29,376 1
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    AO3434A Cut Tape 29,376 1
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    AO3434A Reel 27,000 3,000
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    Find more AO34 price and stock on Findchips.com

    AO34 Datasheets (100)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO3400 Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO3400 Alpha & Omega Semiconductor General Purpose - 30V N-Channel MOSFET (Replacement AO3400A) Original PDF
    AO3400 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    AO3400-5.8A Unknown MOSFET SOT-23 N Channel 30V Original PDF
    AO3400A Alpha & Omega Semiconductor General Purpose - 30V N-Channel MOSFET Original PDF
    AO3400A Alpha Industries N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO3400A_101 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V SOT23 Original PDF
    AO3400L Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO3400_101 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 5.8A SOT23 Original PDF
    AO3401 Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO3401 Alpha & Omega Semiconductor General Purpose - 30V P-Channel MOSFET (Replacement AO3401A) Original PDF
    AO3401 Kexin P-Channel Enhancement Mode Power MOSFET Original PDF
    AO3401A Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO3401A Alpha & Omega Semiconductor General Purpose - 30V P-Channel MOSFET Original PDF
    AO3401AL Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 4A SOT23-3 Original PDF
    AO3401AL_DELTA Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V SOT23 Original PDF
    AO3401L Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO3402 Alpha & Omega Semiconductor General Purpose - 30V N-Channel MOSFET Original PDF
    AO3402 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    AO3402 Unknown N-Channel Enhancement Mode Field Effect Transistor Original PDF

    AO34 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HTGB

    Abstract: No abstract text available
    Text: AOS Semiconductor Product Reliability Report AO3404/AO3404L, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Feb 16, 2006 1 This AOS product reliability report summarizes the qualification result for AO3404. Accelerated


    Original     		AO3404/AO3404L, AO3404. AO3404 10-5eV/ Mil-Std-105D HTGB PDF

    AO3404AL

    Abstract: No abstract text available
    Text: AOS Semiconductor Product Reliability Report AO3404A/AO3404AL, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com May 28, 2008 1 This AOS product reliability report summarizes the qualification result for AO3404A. Accelerated


    Original     		AO3404A/AO3404AL, AO3404A. AO3404A Mil-Std-105D AO3404AL PDF

    SEC540

    Abstract: No abstract text available
    Text: AOS Semiconductor Product Reliability Report AO3435/AO3435L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AO3435. Accelerated


    Original     		AO3435/AO3435L, AO3435. AO3435 108hrs 3x164) SEC540 PDF

    AO3401A

    Abstract: P-Channel MOSFET AO3401
    Text: AO3401A 30V P-Channel MOSFET General Description Product Summary The AO3401A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications.


    Original     		AO3401A AO3401A P-Channel MOSFET AO3401 PDF

    AO3403

    Abstract: P-Channel MOSFET
    Text: AO3403 30V P-Channel MOSFET General Description Product Summary The AO3403 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -2.6A


    Original     		AO3403 AO3403 Junction-to-AmbieO3403 P-Channel MOSFET PDF

    JESD22-A108

    Abstract: JESD22*108
    Text: AOS Semiconductor Product Reliability Report AO3421E, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO3421E. Accelerated environmental tests are performed on a specific sample size, and then followed


    Original     		AO3421E, AO3421E. AO3421E Resul77x168 6x77x1000) JESD22-A108 JESD22*108 PDF

    smd 58a transistor 6-pin

    Abstract: KO3400 AO3400 smd transistor 26 TRANSISTOR SMD 1A ao3400 transistor
    Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3400 AO3400 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS (V) = 30V 0.4 3 (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) 52m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = 2.5V) +0.05 0.1-0.01 0-0.1


    Original     		KO3400 AO3400) OT-23 smd 58a transistor 6-pin AO3400 smd transistor 26 TRANSISTOR SMD 1A ao3400 transistor PDF

    AO3400

    Abstract: N-Channel MOSFET 58A2 MOSFET N-Channel AO3400
    Text: AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V)


    Original     		AO3400 AO3400 N-Channel MOSFET 58A2 MOSFET N-Channel AO3400 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOS Semiconductor Product Reliability Report AO3420/AO3420L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 20, 2006 1 This AOS product reliability report summarizes the qualification result for AO3420. Accelerated


    Original     		AO3420/AO3420L, AO3420. AO3420 Mil-Std-105D PDF

    A18E smd

    Abstract: A18E
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2


    Original     		OT-23-3 A18E smd A18E PDF

    AO3419

    Abstract: AO3419L
    Text: Rev 1:Nov 2004 AO3419, AO3419L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This


    Original     		AO3419, AO3419L AO3419 O-236 OT-23) AO3419L PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3410 N-Channel Enhancement Mode Field Effect Transistor TO-236 SOT-23 Features VDS (V) = 30V ID = 5.8 A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) General Description D The AO3410 uses advanced trench technology to


    Original     		AO3410 O-236 OT-23) AO3410 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3401 P-Channel Enhancement Mode Field Effect Transistor Features TO-236 SOT-23 VDS (V) = -30V ID = -4.2 A (V GS = -10V) RDS(ON) < 50m Ω (VGS = -10V) RDS(ON) < 65m Ω (VGS = -4.5V) RDS(ON) < 120m Ω (VGS = -2.5V) D G D S G S General Description The AO3401 uses advanced trench technology to


    Original     		AO3401 O-236 OT-23) AO3401 KSM3401 KSM3401L KSM3401L PDF

    ao3411

    Abstract: AO3413 transistor AO3413 TRANSISTOR C-111 marking code RL33
    Text: June 2003 AO3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3413 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		AO3413 AO3413 O-236 OT-23) OT-23 AO3411 ao3411 transistor AO3413 TRANSISTOR C-111 marking code RL33 PDF

    43a sot23

    Abstract: ao34
    Text: AO3433 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3433 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard


    Original     		AO3433 O-236 OT-23) 01APPLICATIONS 43a sot23 ao34 PDF

    AO3407A

    Abstract: 43a sot23
    Text: AO3407A 30V P-Channel MOSFET General Description Product Summary The AO3407A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) VDS -30V


    Original     		AO3407A AO3407A 43a sot23 PDF

    AO3407

    Abstract: 87m diode
    Text: AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@ 4.1A < 64.5m Ω RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L


    Original     		AO3407 OT-23-3L 300us, AO3407 87m diode PDF

    AO3400

    Abstract: MOSFET N-Channel AO3400 N-Channel, 30V, 4.0A, Power MOSFET
    Text: AO3400 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS ON , Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		AO3400 OT-23-3L 300us, AO3400 MOSFET N-Channel AO3400 N-Channel, 30V, 4.0A, Power MOSFET PDF

    ao3405

    Abstract: AO3405L
    Text: AO3405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3405 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3405 is Pb-free


    Original     		AO3405 AO3405 AO3405L AO3405L O-236 OT-23) PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3404A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow


    Original     		AO3404A AO3404A O-236 OT-23) PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3460 60V N-Channel MOSFET General Description Product Summary The AO3460 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide


    Original     		AO3460 AO3460 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		AO3415 AO3415 AO3415L AO3415L O-236 OT-23) OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		AO3423 AO3423/L AO3423 AO3423L -AO3423L O-236 OT-23) PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3419 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		AO3419 AO3419/L AO3419 AO3419L -AO3419L O-236 OT-23) PDF