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    Untitled

    Abstract: No abstract text available
    Text: AO3401 P-Channel Enhancement Mode Field Effect Transistor Features TO-236 SOT-23 VDS (V) = -30V ID = -4.2 A (V GS = -10V) RDS(ON) < 50m Ω (VGS = -10V) RDS(ON) < 65m Ω (VGS = -4.5V) RDS(ON) < 120m Ω (VGS = -2.5V) D G D S G S General Description The AO3401 uses advanced trench technology to


    Original     		PDF AO3401 O-236 OT-23) AO3401 KSM3401 KSM3401L KSM3401L

    Untitled

    Abstract: No abstract text available
    Text: AO3401A 30V P-Channel MOSFET SOT23 Product Summary VDS ID at VGS=-10V -30V -4.0A RDS(ON) (at VGS=-10V) < 50mΩ RDS(ON) (at VGS =-4.5V) < 60mΩ RDS(ON) (at VGS=-2.5V) < 85mΩ D General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation


    Original     		PDF AO3401A AO3401A KSM3401A

    Untitled

    Abstract: No abstract text available
    Text: AO3401A 30V P-Channel MOSFET SOT23 Product Summary VDS ID at VGS=-10V -30V -4.0A RDS(ON) (at VGS=-10V) < 50mΩ RDS(ON) (at VGS =-4.5V) < 60mΩ RDS(ON) (at VGS=-2.5V) < 85mΩ D General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation


    Original     		PDF AO3401A AO3401A KSM3401A