Untitled
Abstract: No abstract text available
Text: MB88344PFV 1/2 IL16 C-MOS D/A CONVERTER 25 AO28 26 AO29 27 AO30 28 AO31 VCC 29 NC 30 VDD2 31 VSS2 32 33 AO32 34 AO33 35 AO34 36 AO35 —TOP VIEW— AO6 43 18 AO21 AO7 44 17 AO20 AO8 45 16 AO19 AO9 46 15 AO18 AO10 47 14 AO17 AO11 48 13 AO16 AO15 12 19 AO22
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MB88344PFV
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)
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IDT7M4048
IDT7MB4048
400jiA
32-pin,
IDT7M4048/7MB4048
7MB4048SXXP
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ba 5937 fp
Abstract: No abstract text available
Text: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads
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28F800F3,
28F160F3
ba 5937 fp
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS W PS512K32-XPJX 512Kx32 SRAM MODULE FEATURES • A c c e s s T i m e s o f 1 5 , 1 7 , 2 0, 2 5 n s ■ T TL C o m p a t i b l e In p u ts a n d C M O S O u tp u t s ■ P a c k a g in g ■ 5 V o l t P o w e r S u p p ly • 68 Lead, P la s tic PLCC, 2 5 . 1 5 m m 0 .9 9 0 inch sq u a re
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PS512K32-XPJX
512Kx32
WPS512K32-XPJX
WPS512K32-XPJX
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Untitled
Abstract: No abstract text available
Text: a WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SM D 5962-96692 FEATURES • A ccess Tim es of 70, 90, 120, 150ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300 • 3 2 lead, Herm etic Ceram ic, 0.400" S O J (Package 101)
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WMF512K8-XXX5
512Kx8
150ns
512Kx8
64KByte
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)
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WSF512K16-XXX
512Kx16SRAM
120ns
120ns
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A14U
Abstract: No abstract text available
Text: a WMS512K8V-XXX WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC SRAM PRELIMINARY* FEATURES • A c c e s s T i m e s 15, 17, 2 0 n s Low Power CMOS ■ M IL - S T D - 8 8 3 C o m p l i a n t D e v ic e s A v a i l a b l e L o w V o l t a g e O p e ra tio n : ■
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WMS512K8V-XXX
512Kx8
A14U
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Untitled
Abstract: No abstract text available
Text: a WS1M32-XG3X WHITE /MICROELECTRONICS 1Mx32 SRAM MODULE FEATURES • A c c e s s T im e s of 17, 20, 25ns Low Pow er CM OS ■ 84 lead, 28mm CQFP, Packag e 511 Built-in Decoupling Caps and M u ltip le Ground Pins fo r Low Noise Operation ■ Organized as tw o banks of 5 1 2K x3 2 , U ser C o nfig urable as
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WS1M32-XG3X
1Mx32
WS1M32-XG3X
AO-18
512Kx32
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HY 1602
Abstract: No abstract text available
Text: y j M/HITE MICROELECTRONICS 512Kx8 SRAM P R E LIM IN A R Y WPS512K8-XRJX ’ PLASTIC PLUS FEATURES FIG. 1 • Access Times of 15, 20, 25nS PIN C O N FIG U R ATIO N TOP VIEW AOC 1 ' W ■ Standard Commercial Off-The-Shelf (COTS Memory Devices for Extended Temperature Range
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WPS512K8-XRJX
512Kx8
512Kx
HY 1602
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FD11O
Abstract: No abstract text available
Text: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)
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WSF512K16-XXX
512Kx16
120nS
66-pin,
120nS
FD11O
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Untitled
Abstract: No abstract text available
Text: WMF512K8-XXX5 WHITE /M IC R O E L E C T R O N IC S 512 Kx 8 MONOLITHIC FLASH PRELIM IN ARY* FEATURES • Organized as 512Kx8 ■ Access Times of 70, 9 0 ,1 2 0 and 150nS ■ Com m ercial, Industrial and M ilitary Tem perature Ranges ■ Packaging • 32 pin, Hermetic Ceram ic, 0.600" DIP Package 300
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WMF512K8-XXX5
150nS
512Kx8
01HXX
03HXX
04HXX
01HYX
03HYX
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS WF512K32-XXX5 512Kx32 5V FLASH M ODULE, SM D 5962-94612 FEATURES • A ccess Tim es of 70, 9 0 , 1 2 0 , 150ns ■ O rganized as 512Kx32 ■ Packaging ■ C om m ercial, Ind ustria l and M ilita r y T e m pe ratu re Ranges • 66 -pin, PGA Type, 1.075 inch square, H erm etic
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WF512K32-XXX5
512Kx32
150ns
64KBytes
120ns
150ns
120ns
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS 512Kx48SRAM MODULE WS512K48-XG4WX ADVANCED* FEATURES • ■ ■ ■ A ccess Tim es 17, 20, 25, 35ns ■ 2V D ata R etention Device Packaging: ■ TTL C om p atible Inputs and O utputs • 116 Lead, 40.0m m H e rm e tic CQFP Package 504
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WS512K48-XG4WX
512Kx48SRAM
S512K
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Untitled
Abstract: No abstract text available
Text: \ 'A WHITE MICROELECTRONICS 512Kx8SRAM WPS512K8-XRJX PRELIMINARY* PLASTIC PLUS FEATURES PIN CONFIGURATION TOP VIEW 36 □ 1 A1 C 2 35 □ A18 A2 □ 3 34 □ A 17 A3 □ 4 33 □ A16 A4 □ 5 32 □ A15 CSC 6 U 31 7 30 □ I/0 7 1/01 □ 8 29 □ I/0 6
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WPS512K8-XRJX
512Kx8SRAM
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Untitled
Abstract: No abstract text available
Text: T T WS512K32BV-XCJCE M/HITE /M ICROELECTRONICS 512Kx32 3.3V SRAM MODULE ADVANCED* FEATURES • Access Times of 15,17, 20ns Commercial Temperature Range ■ Low Voltage Operation: TTL Compatible Inputs and Outputs •3.3V ±10% Power Supply Fully Static Operation:
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WS512K32BV-XCJCE
512Kx32
68-lead,
512Kx32;
1Mx16
WS512K32BV-XCJCE
68LEADJLCC
WS512K32BV-XC
512K32
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Untitled
Abstract: No abstract text available
Text: !. f WS512K32-XCJC WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE p r e l im in a r y * FEATURES • A c c e s s T im e s o f 17, 2 0 , 2 5 , 3 5 a nd 4 5 n s ■ TTL C o m p a t ib l e In puts a nd C M O S O u tp u ts ■ 6 8 - l e a d , JLCC, P a c k a g e 701
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WS512K32-XCJC
512Kx32
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7M4048
Abstract: IDT7M4048
Text: bflE •I 4325771 0014401 3t,T IDTIDT7M4048 IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE INTEGRATED DEVICE. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 Static RAMs
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IDTIDT7M4048
IDT7MB4048
110mA
400pA
250pA
32-pin,
IDT7M4048/7MB4048
IDT7M4048,
IDT7MB4048
7M4048
IDT7M4048
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Untitled
Abstract: No abstract text available
Text: ÛEROFLEX Cl HCJTTECHNOLOGY Features • 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 70, 90, 120 and 150nS ■ +5V Programing, 5V ±10% Supply ■ 100,000 Erase/Program Cycles ■ Low Power CMOS, Standby Current 1 mA
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F512K32-E
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SAMSUNG SRAM
Abstract: No abstract text available
Text: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Overall configuration as 512K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order
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ACT-S512K32V
68-Lead,
66-Lead,
MIL-PRF-38534
MIL-STD-883
SCD3360
SAMSUNG SRAM
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Untitled
Abstract: No abstract text available
Text: I I I I I I I I I I I I I I I I I I ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM Plastic Path Features • Low Power Monolithic CMOS 512K x 8 SRAM ■ Operating Temperature Range • Full Military -55°C to +125°C • Industrial (-40°C to +85°C)
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ACT-PS512K8
SCD3764
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060P7Q
Abstract: No abstract text available
Text: — H ACT-F512K32 High Speed H — 16 Megabit FLASH Multichip Module Q eroflex CIRCUIT TECHNOLOGY www.aeroflex.com Features • 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 60, 70, 9 0 ,1 2 0 and 150ns
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ACT-F512K32
150ns
MIL-PRF-38534
SCD1665
060P7Q
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Untitled
Abstract: No abstract text available
Text: -L T - P < mm >5 1 21 £ ; 1H i l n n 1 ' A1 IWI r \ t if ] h it D i o c r û I I /If issssi t VI Jtl u i l o t t t r 1Irli J l >6 Hd l i Ii1h p ltf.1 I iIls C►F l\/l Preliminary PlasticPath Features • Low Power Monolithic CMOS 512K x 8 SRAM ■ Operating Temperature Range
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PS512K8
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Untitled
Abstract: No abstract text available
Text: WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 PRELIMINARY* FEATURES • A c c e s s T i m e s o f 7 0, 90, 1 20 a n d 150n S ■ C o m m e r c ia l , In d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a ng e s ■
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WMF512K8-XXX5
512Kx8
64KByte
120nS
03HXX
04HXX
150nS
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