SBS-50
Abstract: SBS50BLU
Text: SBS 50 Anderson Power Products Connector ® The Patented SBS0 is designed for high voltage applications where personal safety is critical. The connector meets the accessibility requirements of UL1977 section 10.2 and is recommended for over 50 volts. FEATURES
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UL1977
DS-SBS50
REV08
SBS-50
SBS50BLU
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TMS320
Abstract: TMS320C17 TMS370
Text: TMS320C17 and TMS370C010 Serial Interface APPLICATION REPORT: SPRA391 Wallace Anderson Computer Science Center Dallas, TX Peter Robinson Regional Technology Center Waltham, Massachusette Tim Settle Automotive Applications Carmel, Indiana Texas Instruments
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TMS320C17
TMS370C010
SPRA391
TMS320
TMS370
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1453G2
Abstract: 1454G1 110G9 PP15 110G10 115G2 1309G3 1451G3 1451g2
Text: Powerpole Pak Anderson Power Products Connector ® Powerpole® Paks are high impact and corrosion-resistant black thermoplastic outer shells for containing our 10 to 45 amp Powerpole® connectors. They allow easy connection and disconnection of electrical
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REV05
1453G2
1454G1
110G9
PP15
110G10
115G2
1309G3
1451G3
1451g2
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DS-E32EBCM
Abstract: E16-89 EN1175-1 pbtp EN1175
Text: EBC Connectors E32 Male DIN 43589-1 Anderson Power Products’ family of Euro Battery Connectors EBC exceeds all the requirements of DIN 43589-1 and EN 1175-1. The connector design incorporates an innovative, cost effective contact carrier for ease of assembly.
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EN1175-1
Conta-422-3700
DS-E32EBCM
E16-89
pbtp
EN1175
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1120nm
Abstract: Silicon Group Q62607-S61
Text: TP 61 P TP 61 P fso06637 Silizium-Fotoelement Silicon Photovoltaic Cell Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1120 nm ● Kathode = Chipunterseite
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fso06637
1120nm
Silicon Group
Q62607-S61
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1388G4
Abstract: 6800G3 6802G2 6800G1 6800G2 6801G1 6801G2 6801G3 6802G1 6802G3
Text: SB 120 Anderson Power Products Connector ® The innovative SB® connectors provide cost-effective reliability, design flexibility and safety for your products' manufacture, installation and maintenance. FEATURES APP's 2 pole connector is available with a
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Pre921
LR25154
E26226
DS-SB120
REV04
1388G4
6800G3
6802G2
6800G1
6800G2
6801G1
6801G2
6801G3
6802G1
6802G3
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6323g2
Abstract: 6320G5 SB350 anderson 6322G1 6320G1 6320G2 6320G4 6321G1 6321G2 6321G4
Text: SB 350 Anderson Power Products Connector ® The innovative SB® connectors provide costeffective reliability, design flexibility and safety for your products' manufacture, installation and maintenance. APP's 2 pole connector is available with a 350 amp rating, 600 Volts continuous AC or
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LR25154
E26226
DS-SB350
REV01
6323g2
6320G5
SB350 anderson
6322G1
6320G1
6320G2
6320G4
6321G1
6321G2
6321G4
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6331G3
Abstract: 6319G1 6331G7 6331G1 6331G2 6331G4 6331G5 6331G6 6331G8 6331G9
Text: SB 50 Anderson Power Products Connector ® The innovative SB® connectors provide costeffective reliability, design flexibility and safety for your products' manufacture, installation and maintenance. APP's 2 pole connector is available with a 50 amp rating, 600 Volts continuous AC or DC
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1309G4
1387G1
1388G6
1388G7
1389G6
1389G7
260G16
284G1
250G5
E26226
6331G3
6319G1
6331G7
6331G1
6331G2
6331G4
6331G5
6331G6
6331G8
6331G9
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GE006367
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 260 LD 262 . LD 269 Chip 2.54 mm spacing GE006367 Cathode LD 263 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features
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GE006367
80-Serie
LD260
GE006367
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 464 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features Wesentliche Merkmale • Strahlung im sichtbaren Rotbereich ohne IRAnteil
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Sam1998-07-15
SFH464
OHR01457
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ls 487
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 4.0 3.6 0iffei 5 2 9 - ^ 6.3 27 5.9 ^ C a th o d e S F H 409 Anode (SFH 487) — (3.5) Chip position . _0.6 ,.v^ V 0.4 GEX06250 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GEX06250
ls 487
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Untitled
Abstract: No abstract text available
Text: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale Features • • • • Speziell geeignet für Anwendungen im
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Untitled
Abstract: No abstract text available
Text: SIEMENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4391 Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Hohe Pulsleistung sowie hoher Gesamtstrah
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LD271 IR LED
Abstract: LD271 APPLICATIONS IR LD271 siemens LD
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 5.9 5.5 0.6 0.4 GEX06239 Approx. weight 0.5 g Cathode 5.9 5.5 OO T— ¡a 0.6 0.4 Area not flat GE006645 Chip position Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GEX06239
GE006645
Ie100
LD271,
LD271 IR LED
LD271 APPLICATIONS
IR LD271
siemens LD
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5mmled
Abstract: No abstract text available
Text: SIEMENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4591 SFH 4592 M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Hohe Pulsleistung sowie hoher Gesamtstrahlungsfluß Oe
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100mA
OHF00365
OHR00397
5mmled
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking spacing ' Photosensitive area 2.65 mm X 2.65 mm Approx. weight 0.1 g GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
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GE006643
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight-Cutoff Filter Reverse Gullwing Photosensitive area 2.65 mm x 2.65 mm BPW 34 FS (E9087) en Cathode lead CD O GEO06916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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E9087)
GEO06916
E9087:
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter Area n ot flat SFH 204 F SFH 204 FA Chip position 5.1 4.7 is W GE006964 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GE006964
SFH204F
OHF2O31O10*
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Q62702-P5072
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode Mini Sidelooker GaAs-lnfrared Emitter (Mini Sidelooker) SFH 4110 Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features •
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3100F
3100F
SFH4110
Q62702-P5072
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current SFH 212 Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im
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A235bOS
0057bDÃ
fl23SbOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit Tagelichtsperrfilter Silicon PIN Photodiode with Daylight Filter SFH 235 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen bei
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fi235b05
0D57b42
SFH235
fl23SbQ5
D0S7b43
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 1.1 5 , 0 .9 0 0 .5 0 .4 2 .5 4 m m s p a c in g \C a th o d e 1 D e t a c h in g f la s h area n o t tr u e GE006317 f o r to o ls , to s iz e . A p p r o x . w e ig h t 0 .0 2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GE006317
535fciQ5
6235fci05
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Silizium-PIN-Fotodiode mit sehr kurzer Schaitzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Very Short Switching Time Silicon PIN Photodiode with Daylight Filter SFH 217 SFH 217 F Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fi235bG5
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Untitled
Abstract: No abstract text available
Text: SIEMENS 6fach-Silizium-Fotodiodenarray 6-Chip Silicon Photodiode Array KOM 2033 A KOM 2033 AF Maße in mm, w enn nicht anders a ngegeben/D im ensions in mm. unless otherw ise specified W esentliche M erkm ale Features • Speziell geeignet für Anwendungen im
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0235bGS
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