AN66311
Abstract: 0x0003 CY62148E CY62177EV30 CY62128E CY62128EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV30
Text: Timing Recommendation for Byte Enables and Chip Enables in MoBL SRAMs AN66311 Author: Anuj Chakrapani Associated Project: No Associated Part Family: CY62126EV30, CY62126ESL, CY62128E, CY62128EV30, CY62136ESL, CY62136EV30, CY62136FV30, CY62137EV30, CY62137FV18, CY62137FV30, CY62138EV30,
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AN66311
CY62126EV30,
CY62126ESL,
CY62128E,
CY62128EV30,
CY62136ESL,
CY62136EV30,
CY62136FV30,
CY62137EV30,
CY62137FV18,
AN66311
0x0003
CY62148E
CY62177EV30
CY62128E
CY62128EV30
CY62136EV30
CY62136FV30
CY62137EV30
CY62137FV30
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Untitled
Abstract: No abstract text available
Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A
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CY62136EV30
CY62136CV30
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Untitled
Abstract: No abstract text available
Text: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62138FV30
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Untitled
Abstract: No abstract text available
Text: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by
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CY62168EV30
16-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62177ESL MoBL 32-Mbit 2 M x 16/4 M × 8 Static RAM 32-Mbit (2 M × 16/4 M × 8) Static RAM Features Functional Description • Thin small outline package-I (TSOP-I) configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ High-speed up to 55 ns
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CY62177ESL
32-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62147EV18 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an
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CY62147EV18
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns
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CY62177EV30
32-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62138F
CY62138V
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Untitled
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE
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CY62146E
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C
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CY62167EV30
16-Mbit
48-rize
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Untitled
Abstract: No abstract text available
Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
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CY62167E
16-Mbit
I/O15)
48-pin
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Untitled
Abstract: No abstract text available
Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A
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CY62157EV18
CY62157DV18
CY62157DV20
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active
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CY62147EV30
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
CY62157DV30
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Untitled
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular
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CY62146EV30
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features
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CY62158EV30
1024K
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Untitled
Abstract: No abstract text available
Text: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by
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CY62168EV30
16-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62158E MoBL 8-Mbit 1 M x 8 Static RAM 8-Mbit (1 M × 8) Static RAM Features • Very high speed: 45 ns ❐ Wide voltage range: 4.5 V–5.5 V applications. The device also has an automatic power down feature that significantly reduces power consumption. Placing
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CY62158E
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Untitled
Abstract: No abstract text available
Text: CY62187EV30 MoBL 64-Mbit 4 M x 16 Static RAM 64-Mbit (4 M × 16) Static RAM Features Functional Description • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V to 3.7 V ■ Ultra low standby power ❐ Typical standby current: 8 A ❐ Maximum standby current: 48 A
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CY62187EV30
64-Mbit
16-bits.
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Untitled
Abstract: No abstract text available
Text: CY62146ESL MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption
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CY62146ESL
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns
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CY62177EV30
32-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62136FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C
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CY62136FV30
CY62136V,
CY62136CV30/CV33,
CY62136EV30
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
CY62157DV30
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