the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: AN4505 AN4506 Calculation of major IGBT operating parameters
Text: AN4504 Application Note AN4504 IGBT Ratings And Characteristics Application Note Replaces September 2000 version, AN4504-3.0 Load AN4504-3.1 July 2002 PNP VD applications this diode acts as a free-wheeling diode or as a protection diode. Fig. 2 illustrates the packages used by Dynex
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AN4504
AN4504
AN4504-3
the calculation of the power dissipation for the igbt and the inverse diode in circuits
AN4505
AN4506
Calculation of major IGBT operating parameters
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.
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GP200MHB12S
DS4339-4
190ns
840ns
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP1600FSS12S ADVANCE ENGINEERING DATA DS4337-4.2 GP1600FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1600A IC(CONT) 3200A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.
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GP1600FSS12S
DS4337-4
190ns
840ns
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GP800
Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
Text: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module
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GP800DCS18
DS5221-4
DS5221-5
GP800
AN4508
AN4502
AN4503
AN4505
GP800DCS18
dc chopper circuit application
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GP801DCM18
Abstract: AN4502 AN4503 AN4505 AN4506
Text: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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GP801DCM18
DS5365-3
GP801DCM18
AN4502
AN4503
AN4505
AN4506
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AN4502
Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Text: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the
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GP401LSS18
DS5288-1
GP401LSS18
AN4502
AN4503
DSA0018823
ups sine wave inverter circuit diagram
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AN4502
Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
Text: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001
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GP2401ESM18
DS5345-1
DS5345-2
AN4502
AN4503
AN4505
GP2401ESM18
3,3 kw high frequency transistor module
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AN4502
Abstract: AN4503 AN4505 AN4506 GP800DCM18
Text: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)
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GP800DCM18
DS5363-3
GP800DCM18
an1800V,
AN4502
AN4503
AN4505
AN4506
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AN4502
Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
Text: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS
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GP200MLK12
GP200MKS12
DS5448-1
AN4502
AN4503
GP200MKS12
GP200MLS12
IGBT 200A 1200V application induction heating
DIODE 10V 10mA
AN5190
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP1200FSS16S ADVANCE ENGINEERING DATA DS4336-4.2 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 1200A IC(CONT) 2400A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control.
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GP1200FSS16S
DS4336-4
270ns
590ns
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AN4502
Abstract: AN4503 AN4505 AN4506 GP2400ESM18
Text: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)
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GP2400ESM18
DS5406-1
GP2400ESM18
AN4502
AN4503
AN4505
AN4506
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AN4502
Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
Text: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001
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GP800NSS33
DS5358-2
GP800NSS33
AN4502
AN4503
AN4505
AN4506
an5167
440nF
DS-5358
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723 ic internal diagram
Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
Text: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)
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GP1201FSS18
DS5411-1
GP1201FSS18
723 ic internal diagram
AN4502
AN4503
AN4505
AN4506
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K1p TRANSISTOR
Abstract: AN4502 AN4503 AN4505 GP1600FSM18
Text: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001
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GP1600FSM18
DS5361-1
DS5361-2
GP1600FSM18
K1p TRANSISTOR
AN4502
AN4503
AN4505
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AN4505
Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
Text: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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GP800DDM18
DS5364-2
DS5364-3
3300y
AN4505
GP800DDM18
AN4502
AN4503
12V DC sine wave inverters circuit diagram
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AN4502
Abstract: AN4503 AN4505 GP800FSS18
Text: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module
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GP800FSS18
DS5261-2
DS5261-3
AN4502
AN4503
AN4505
GP800FSS18
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP300LSS16S ADVANCE ENGINEERING DATA DS4136-5.2 GP300LSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 300A IC(CONT) 600A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control. ■ UPS.
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GP300LSS16S
DS4136-5
270ns
590ns
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Untitled
Abstract: No abstract text available
Text: Si GEC PLE SS EY SEMICONDUCTORS QS4325-3.3 GP250MHB06S POWERUNE N-CHANNEL IGBT MODULE APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers. TYPICAL KEY PARAMETERS 600V ^C E S v C E « a t 2.1V 250A ^ C (C O N T )
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QS4325-3
GP250MHB06S
290ns
430ns
44lbs
70lbs
88lbs
18lbs
1500g
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y S E M I C O N D U C T O R S DS4324-3.1 GP500LSS06S p o w e r l in e n -c h a n n e l ig b t m o d u l e TYPICAL KEY PARAMETERS VCES 600V VCE ial 2.1V W ond 500A APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.
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DS4324-3
GP500LSS06S
290ns
430ns
44lbs
70lbs
88lbs
18lbs
1500g
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GP150MHB16S
Abstract: No abstract text available
Text: Si GEC PLESSEY S E M I C O N D U C T O R S DS4131-5.2 G P 1 5 M H B 1 6 S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS VCES 1600V 3.3V CEfsat 150 A ^qCO NT) 300A ^qPK ) 270ns tr 590ns t, v • High Power Switching. ■ Motor Control.
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DS4131-5
270ns
590ns
44lbs
70lbs
88lbs
18lbs
1500g
GP150MHB16S
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PLESSEY CLA
Abstract: No abstract text available
Text: GEC PLESSEY S i S E M I C O N D U C T O R S DS4338-4.2 GP800DHB12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V ^CES 2.8V 800A l«COMT 1600A ^C PK) 190ns tr 840ns • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.
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DS4338-4
GP800DHB12S
190ns
840ns
44lbs
70lbs
88lbs
18lbs
1500g
PLESSEY CLA
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESS EY SEMICONDUCTORS DS4137-6.2 GP400LSS12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS • High P ow er Switching. ■ M otor Control. TYPICAL KEY PARAMETERS VCES 1200V V c E ,a„ ^c(cont> ■ U P S. ■ A C And D C Servo Drive Amplifiers. 'c p k ,
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DS4137-6
GP400LSS12S
190ns
840ns
44lbs
70lbs
88lbs
18lbs
1500g
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Untitled
Abstract: No abstract text available
Text: GP1600FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4337 - 4.2 DS4337 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1600A C(CONT) 3200A C(PK) 190ns 840ns APPLICATIONS •
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GP1600FSS12S
DS4337
190ns
840ns
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Untitled
Abstract: No abstract text available
Text: GP300LSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1996 version, DS4136 - 5.2 DS4136 - 5.3 March 1998 TYPICAL KEY PARAMETERS 1600V 'c E sat, 3.3V 'q c o N T , 300A 'c (PK, 600A 270ns 590ns APPLICATIONS • High Pow er Sw itching.
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GP300LSS16S
DS4136
270ns
590ns
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