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    AN-940 MOSFET Search Results

    AN-940 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    AN-940 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet power totem pole CIRCUIT

    Abstract: IR 948 AN-940 mosfet HEXFET Power MOSFET P-Channel hexfet power mosfets international rectifier IR P-Channel mosfet IR power mosfet switching power supply P-Channel HEXFET Power MOSFET HEXFET Characteristics HEXFET Power MOSFET
    Text: Application Note AN-940 How P-Channel MOSFETs Can Simplify Your Circuit Table of Contents Page 1. Basic Characteristics of P-Channel HEXFET Power MOSFETs. 1 2. Grounded Loads . 1


    Original     		PDF AN-940 mosfet power totem pole CIRCUIT IR 948 AN-940 mosfet HEXFET Power MOSFET P-Channel hexfet power mosfets international rectifier IR P-Channel mosfet IR power mosfet switching power supply P-Channel HEXFET Power MOSFET HEXFET Characteristics HEXFET Power MOSFET

    mosfet power totem pole CIRCUIT

    Abstract: parallel connection of MOSFETs HEXFET Power MOSFET P-Channel hexfet audio amplifier IR power mosfet switching power supply 20V P-Channel Power MOSFET AN-950 AN-940 mosfet hexfet pair HEXFET Characteristics
    Text: AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load


    Original     		PDF

    mosfet power totem pole CIRCUIT

    Abstract: IR power mosfet switching power supply AN-940 mosfet AN-950 HEXFET Power MOSFET P-Channel AN937 AN-948 P-channel HEXFET Power MOSFET parallel connection of MOSFETs hexfet audio amplifier
    Text: Index AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load


    Original     		PDF

    J239

    Abstract: No abstract text available
    Text: Document Number: AFT09H310−03S Rev. 1, 9/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT09H310â 03SR6 04GSR6 J239

    transistor MARKING NC KRC

    Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E AGR09130EU AGR09130EF transistor MARKING NC KRC MARKING CODE c26 AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP

    J377

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09H310-03S Rev. 0, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT09H310--03S AFT09H310-03SR6 AFT09H310-03SR6 AFT09H310-04GSR6 J377

    Z921

    Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130EU AGR09130EF Z921 transistor MARKING NC KRC MOSFET 930 06 ng

    AGR09130E

    Abstract: AGR09130EF AGR09130EU JESD22-C101A
    Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E DS04-030RFPP DS03-151RFPP) AGR09130EF AGR09130EU JESD22-C101A

    RM73B2B

    Abstract: gl 3201 AGR09130EF AGR09130E AGR09130EU JESD22-C101A
    Text: Draft Copy Only Preliminary Data Sheet April 2004 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E DS04-154RFPP DS04-030RFPP) RM73B2B gl 3201 AGR09130EF AGR09130EU JESD22-C101A

    WZ150

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 DS03-151RFPP WZ150

    PD85006

    Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
    Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package


    Original     		PDF PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208

    PD85006

    Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J
    Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package


    Original     		PDF PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J

    power 12v

    Abstract: No abstract text available
    Text: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1


    Original     		PDF DB-55008L-960 PD55008L-E 960MHz DB-55008L-960 power 12v

    DB-55008L-960

    Abstract: JESD97 PD55008L-E
    Text: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1


    Original     		PDF DB-55008L-960 PD55008L-E 960MHz DB-55008L-960 JESD97 PD55008L-E

    ATC100B470JT500XT

    Abstract: ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 mrf8p9210n ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P9210N MRF8P9210NR3 ATC100B470JT500XT ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P9210N MRF8P9210NR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFV09P350-04N Rev. 0, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		PDF AFV09P350--04N AFV09P350-04NR3 AFV09P350-04GNR3

    AFV09P350-04NR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFV09P350-04N Rev. 0, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		PDF AFV09P350--04N AFV09P350-04NR3 AFV09P350-04GNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range


    Original     		PDF MMRF1020--04N MMRF1020-04NR3 MMRF1020-04GNR3

    102N06

    Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
    Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product


    Original     		PDF 500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX

    PD54003L

    Abstract: PD5400
    Text: DB-54003L-930 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 930 MHz ■ Supply voltage: 5V ■ Output power: 1.5W ■ Efficiency: 51% - 55% ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-930 PD54003L DB-54003L-930 PD5400

    NV SMD TRANSISTOR

    Abstract: AN1294 UHF rfid reader ma706
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■


    Original     		PDF PD84006-E 2002/95/EC PowerSO-10RF PD84006-E NV SMD TRANSISTOR AN1294 UHF rfid reader ma706

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line MRF9080 MRF9080S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF9080 MRF9080S MRF9080 RDMRF9080GSM

    transistor 9527

    Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF RA01L9595M 952-954MHz RA01L9595M transistor 9527 T 9527 st 9535 9542 mitsubishi data sheet transistor 9527