TSFF5510
Abstract: No abstract text available
Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear, untinted, plastic package.
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TSFF5510
TSFF5510
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR
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BPV10NF
BPV10NF
2002/95/EC
2002/96/EC
18-Jul-08
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BPV10NF
Abstract: tshf5
Text: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR
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BPV10NF
BPV10NF
08-Apr-05
tshf5
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N861
Abstract: BGO827 bgo827_fc0_sc0 72125
Text: BGO827; BGO827/FC0; BGO827/SC0 870 MHz optical receivers Rev. 5 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC
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BGO827;
BGO827/FC0;
BGO827/SC0
OT115
BGO827
N861
bgo827_fc0_sc0
72125
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BGO807
Abstract: 72125
Text: BGO807; BGO807/FC0; BGO807/SC0 870 MHz optical receivers Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC
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BGO807;
BGO807/FC0;
BGO807/SC0
OT115
BGO807
72125
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72125
Abstract: No abstract text available
Text: BGO827; BGO827/FC0; BGO827/SC0 870 MHz optical receivers Rev. 5 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC
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BGO827;
BGO827/FC0;
BGO827/SC0
OT115
BGO827
72125
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SCSI-3 connector
Abstract: VXIPC-87 IEC C13 pinout free circuit diagram of motherboard spy all versa C-15 TNT4882C SERVICE MANUALS TV CHINA MSG60 IEEE Standard 1014-1987 i3 desktop MOTHERBOARD CIRCUIT diagram
Text: VXI VXIpc 870 Series User Manual VXIpc 870 Series User Manual July 2000 Edition Part Number 322116B-01 Worldwide Technical Support and Product Information www.ni.com National Instruments Corporate Headquarters 11500 North Mopac Expressway Austin, Texas 78759-3504
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322116B-01
IEEE-1284,
SCSI-3 connector
VXIPC-87
IEC C13 pinout
free circuit diagram of motherboard spy all versa
C-15
TNT4882C
SERVICE MANUALS TV CHINA
MSG60
IEEE Standard 1014-1987
i3 desktop MOTHERBOARD CIRCUIT diagram
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IEEE Standard 1014-1987
Abstract: vme 7695 VXIPC-87 "VME Backplane" MTBF MDSM-9SC-Z11 Symbios 53C885 53c885 Symbios Logic 53c885 LED Light-emitting diode TNT4882C
Text: VXI VXIpc 870 Series User Manual VXIpc 870 Series User Manual March 1999 Edition Part Number 322116A-01 Worldwide Technical Support and Product Information www.natinst.com National Instruments Corporate Headquarters 11500 North Mopac Expressway Austin, Texas 78759-3504
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22116A-01
IEEE-1284,
IEEE Standard 1014-1987
vme 7695
VXIPC-87
"VME Backplane" MTBF
MDSM-9SC-Z11
Symbios 53C885
53c885
Symbios Logic 53c885
LED Light-emitting diode
TNT4882C
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Untitled
Abstract: No abstract text available
Text: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 4 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD944C
OT115J
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Abstract: No abstract text available
Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 4 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD942C
OT115J
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SOT115J
Abstract: No abstract text available
Text: CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 01 — 19 June 2008 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs
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CGY888C
OT115J
CGY888C
SOT115J
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Untitled
Abstract: No abstract text available
Text: CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 02 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs
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CGY888C
OT115J
CGY888C
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nxp power microwave transistor
Abstract: No abstract text available
Text: CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 03 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs
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CGY888C
OT115J
CGY888C
nxp power microwave transistor
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CGD944C
Abstract: No abstract text available
Text: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD944C
OT115J
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CGD942C
Abstract: No abstract text available
Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD942C
OT115J
CGD942C
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CGD944C
Abstract: No abstract text available
Text: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD944C
OT115J
CGD944C
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CGD942C
Abstract: No abstract text available
Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 02 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD942C
OT115J
CGD942C
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grm188r71c474ka88
Abstract: 1A diode DIODE SG 61A led bulb schematic MR16 led CRCW08050R33F 1N4148W LM3405A MR-16 NSCA1001
Text: National Semiconductor LM3405A Man Lau October 2007 1.0 Design Specifications Inputs Output #1 VinMin=10.8ACV Vout1=3.8V VinMax=13.2ACV Iout1=0.6A 2.0 Design Description The LM3405A LED driver has been used for this design. It is a current mode control buck switching regulator designed to
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LM3405A
LM3405A
CSP-9-111S2)
CSP-9-111S2.
grm188r71c474ka88
1A diode
DIODE SG 61A
led bulb schematic
MR16 led
CRCW08050R33F
1N4148W
MR-16
NSCA1001
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CGD942C
Abstract: No abstract text available
Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD942C
OT115J
CGD942C
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CGD944C
Abstract: No abstract text available
Text: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 01 — 6 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD944C
OT115J
CGD944C
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CGD923
Abstract: MGU820
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D848 CGD923 870 MHz, 20 dB gain power doubler amplifier Product specification 2002 Oct 08 NXP Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier FEATURES CGD923 PINNING - SOT115AE • High output capability
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M3D848
CGD923
OT115AE
613518/01/pp8
CGD923
MGU820
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DP7310J
Abstract: No abstract text available
Text: 20-301590-10 REPLACES NATIONAL SEMICONDUCTOR DP7310J .3 DIP WITH TI SN74ACT564DWJ LEAD PACKAGE FEATURES: • Allows placing an SOIC narrow body on a board laid out for an SOWIC (wide body). • Solder masked top side pads allow user to hand solder devices directly to top side of adapter with fewer problems of solder bridging.
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DP7310J
SN74ACT564DWJ
C36000
ASTM-B16-85.
MIL-T-10727
MIL-P-81728
QQ-N-290.
DP7310J
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Untitled
Abstract: No abstract text available
Text: AN11357 BGU8009 Matching Options for 850 MHz / 2400 MHz Jammer Immunity Rev. 1 — 27 May 2013 Application Note Document information Info Content Keywords LNA, GNSS, GPS, BGU8009, WLAN, GSM-850, GSM-900 Abstract This document describes an alternative input matching option for the
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AN11357
BGU8009
BGU8009,
GSM-850,
GSM-900
GSM850/900
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2.45GHz magnetron
Abstract: power supply for magnetron NL2555 NL2555-25 oven 2.45GHz magnetron Radmor T-5521 WR430 thermoswitch National Electronics
Text: NL2555-25 NL2555-15 9/26/90 PAGE 1 0F 2 <§* NATIONAL 870 WATT CW MAGNETRON - 2.45GHZ THIS HIGHLY EFFICIENT, COMPACT CW MAGNETRON WITH INTEGRAL MAGNET IS SUITABLE FOR INDUSTRIAL APPLICATIONS AND CATERING OVENS. THESE MAGNETRONS MEET IEC SAFETY REGULATIONS AND BSI REGULATIONS FOR
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NL2555-25
NL2555-15
45GHZ
HL2555-25
ML2555-25
2.45GHz magnetron
power supply for magnetron
NL2555
oven 2.45GHz magnetron
Radmor T-5521
WR430
thermoswitch
National Electronics
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