DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
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DL162
Abstract: DL163
Text: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xC
16-Bit)
FBC048.
DL162
DL163
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S29JL032
Abstract: DL161 DL162 DL163 S29JL032H S29PL032J S29PL-J D162DT90 D163DB70 D164DB70
Text: Am29DL16xD Data Sheet Retired Product Am29DL16xD Cover Sheet This product family has been retired and is not recommended for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factoryrecommended migration path. Please refer to the S29JL032H data sheet for specifications and ordering information.
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Am29DL16xD
S29JL032H
S29PL032J
S29PL-J
21533E6
S29JL032
DL161
DL162
DL163
D162DT90
D163DB70
D164DB70
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Untitled
Abstract: No abstract text available
Text: TECHNOLOGY BACKGROUND AMD DL160 and DL320 Series Flash: New Densities, New Features 2 Am29DL16x and Am29DL32x Series: New Densities, New Features Introduction The DL160 series and DL320 series are the newest devices in the family of low power Simultaneous Read/Write Flash devices from AMD. These devices utilize the same
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DL160
DL320
Am29DL16x
Am29DL32x
Am29DL400
Am29DL800
2271A
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Untitled
Abstract: No abstract text available
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations
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Am29DL16xD
16-Bit)
VBF048
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Untitled
Abstract: No abstract text available
Text: P R O D U C T B R I E F Simultaneous Read/Write Flash Memory Devices Am29DL400 Am29DL800 Am29DL16x Am29DL32x New High Density Device Features Ba n M k 1 b Ba n (M k 2 b) t Pa r Ba n (M k 2 b) Key features include the following: Device Bank Sizes Ba n (M k 1
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Am29DL400
Am29DL800
Am29DL16x
Am29DL32x
AM29LVxxx
Am29DL400BB/T
Am29DL800BB/T
Am29DL16xCB/T
16/512K
16/1M
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DL161
Abstract: DL162 DL163 D163DB70
Text: Am29DL16xD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29DL16xD
DL161
DL162
DL163
D163DB70
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29DL16xD
VBF048
DL161
DL162
DL163
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D164DB70
Abstract: d162dt90
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations
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Am29DL16xD
16-Bit)
D164DB70
d162dt90
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am42DL16x2D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am42DL16x2D
Am29DL16xD
16-Bit)
69-Ball
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M410000002
Abstract: DL161 DL162 DL163 AM41DL1644DT
Text: PRELIMINARY Am41DL16x4D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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Am41DL16x4D
Am29DL16xD
16-Bit)
8-Bit/256
69-Ball
M410000002
DL161
DL162
DL163
AM41DL1644DT
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29DL16xD
VBF048
DL161
DL162
DL163
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am29dl163cb
Abstract: AM29DL163C AMD Family 10h Processor Electrical Data Sheet S29JL032 S29JL032H 120R DL162 DL163 S29AL016D AM29DL163CT90
Text: Am29DL16xC Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs that do not require simultaneous read/write SRW operations, the S29AL016D supersedes Am29DL16xC. For new designs that require SRW, the S29JL032H supersedes Am29DL16xC. Please refer to the
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Am29DL16xC
S29AL016D
S29JL032H
Am29AL16xD
21533C2
am29dl163cb
AM29DL163C
AMD Family 10h Processor Electrical Data Sheet
S29JL032
120R
DL162
DL163
AM29DL163CT90
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DL160
Abstract: DL320 Am29DL322
Text: Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory AMD FLASH: AMD's patented simultaneous read/write family of Flash memory devices is the first hardware capable of reading data during program or erase operations. AMD's dual bank design divides
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Am29DL16xC
16-Bit)
DL160
DL320
Am29DL162
Am29DL163
Am29DL322
Am29DL323
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AM29DL163CT
Abstract: D163CT90V D164C
Text: PRELIMINARY Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL16xC
16-Bit)
AM29DL163CT
D163CT90V
D164C
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am42DL16x4D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am42DL16x4D
Am29DL16xD
16-Bit)
69-Ball
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DL161
Abstract: DL162 DL163 56-Pin
Text: Am29DL16xD Data Sheet The following document contains information on Spansion memory products. Although the document is marked with the name of the company that originally developed the specification, Spansion will continue to offer these products to existing customers.
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Am29DL16xD
21533E5
DL161
DL162
DL163
56-Pin
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D164C
Abstract: AM29DL163CT90 DL162 DL163
Text: PRELIMINARY Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL16xC
16-Bit)
Am29DL164
D164C
AM29DL163CT90
DL162
DL163
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DL160
Abstract: No abstract text available
Text: TECHNOLOGY BACKGROUND Back AMD DL160 and DL320 Series Flash: New Densities, New Features 2 Am29DL16x and Am29DL32x Series: New Densities, New Features Introduction The DL160 series and DL320 series are the newest devices in the family of low power Simultaneous Read/Write Flash devices from AMD. These devices utilize the same
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DL160
DL320
Am29DL16x
Am29DL32x
Am29DL400
Am29DL800
2271A
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Untitled
Abstract: No abstract text available
Text: SUPPLEMENT Am29DL16xC Data Sheet Supplement for PROM Programmer Manufacturers This supplement is for use with the Am29DL16xC data sheet, document number 21533. This document describes the sector protection and sector unprotection functions intended for programming equipment. The
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Am29DL16xC
feature243B-3
22243B-4
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.
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Am29DL16xC
16-Bit)
20-year
FBC048.
40-pin
29DL16xC
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JESD-95
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile
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Am29DL16xC
16-Bit)
29DL16xC
JESD-95
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Untitled
Abstract: No abstract text available
Text: PR ELIM IN ARY A M D il Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L A D VANTAG ES • ■ ■ Sim ultaneous R ead/W rite o perations — Data can be continuously read from one bank w hile
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Am29DL16xC
16-Bit)
29DL16xC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D il Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ ■ 20 Year data retention at 125°C
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Am29DL16xC
16-Bit)
DL162.
29DL16xC
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