AM27S02
Abstract: KS000010
Text: Advanced Micro Devices 8 Illll i k i i n j 3 CD 2 c o o h - S 1 CM S El < I Hl i . uin o j 1 I 9 D O I I l X -*X CM O /> h - o il 3 CM 3 E < • r T iT T j - r r i - r T -K ■V i i r i « I Si CONNECTION DIAGRAM S Top Vtew LC C D IP * « m s □ C C 5 * C
|
OCR Scan
|
Am27S02/Am27S03
16-Pln
LS000212
Am27S03
/n27S03
AM27S02
KS000010
|
PDF
|
2n5551
Abstract: 2n5550 transistor 2n5551 2N5551 TO92
Text: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES 2N5550; 2N5551 PINNING • Low current max. 300 mA PIN • High voltage (max. 160 V). 1 APPLICATIONS DESCRIPTION collector 2 base 3 emitter • Switching and amplification in high voltage applications
|
OCR Scan
|
2N5400
2N5401.
2N5550;
2N5551
AM279
2N5550
2n5551
transistor 2n5551
2N5551 TO92
|
PDF
|
AM27519
Abstract: 27S19 AM27S10 FA S72 27s19 programming A7s19 27S19SA AM27S19 am2731 AM27LS10
Text: 26/03/199S 17745" ^7279-455525 -PAGE • F S R N E ttr- a r- S E R V ìe È S - 2 o % - 3 i+ .% a A m 2 7 S 1 9 /2 7 S 1 9 A Advanced Micro Devices A m 2 7 S 1 9 S A /2 7 L S 1 9 256-Bit 32x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS e Ultra high speed • Highly reliable, iritra-fa&l programming PiaBnum-SIRckle
|
OCR Scan
|
26/03/199S
Am27S19/27S19A
Am27S19SA/27LS19
256-Bit
Am27S19
Am27Sl9
Am27Sl9/Z7Sl8A/27Sl9SA/27LS19
26-MPR-1996
I7T45-01279-455526
KS000010
AM27519
27S19
AM27S10
FA S72
27s19 programming
A7s19
27S19SA
am2731
AM27LS10
|
PDF
|