Untitled
Abstract: No abstract text available
Text: STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 80 A
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STGFW80V60F,
STGW80V60F,
STGWT80V60F
O-247
DocID026386
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Untitled
Abstract: No abstract text available
Text: STGF14HF60KD STGP14HF60KD 14 A - 600 V - short-circuit rugged IGBT Preliminary data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution
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STGF14HF60KD
STGP14HF60KD
O-220FP
O-220
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GW40NC60KD
Abstract: No abstract text available
Text: STGW40NC60KD 600 V, 40 A short-circuit rugged IGBT Datasheet - production data Features • Low on-voltage drop VCE(sat • Low Cres / Cies ratio (no cross conduction susceptibility) • Short-circuit withstand time 10 µs 2 • IGBT co-packaged with ultra fast free-wheeling
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STGW40NC60KD
O-247
GW40NC60KD
DocID14807
GW40NC60KD
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GW45HF60WD
Abstract: STGW45HF60WD gw45hf60 ST IGBT code marking
Text: STGW45HF60WD 45 A, 600 V ultra fast IGBT Preliminary data Features • Improved Eoff at elevated temperature ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Ultra fast soft recovery antiparallel diode Applications 2 3 1 ■ Welding ■ High frequency converters
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STGW45HF60WD
O-247
GW45HF60WD
STGW45HF60WD
gw45hf60
ST IGBT code marking
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Untitled
Abstract: No abstract text available
Text: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V
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STGW40H65DFB
STGWT40H65DFB
O-247
SC12850
DocID024363
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Untitled
Abstract: No abstract text available
Text: STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features • Designed for soft commutation only TAB • Maximum junction temperature: TJ = 175 °C • Minimized tail current 2 • VCE sat = 2.0 V (typ.) @ IC = 25 A
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STGW28IH125DF
STGWT28IH125DF
O-247
DocID025268
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STGD3NC120H
Abstract: No abstract text available
Text: STGD3NC120H 7 A, 1200 V very fast IGBT Datasheet − production data Features • High voltage capability ■ High speed TAB Applications ■ Home appliance ■ Lighting 3 2 1 Description IPAK TO251 This device is a very fast IGBT developed using advanced PowerMESH technology. This
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STGD3NC120H
GD3NC120H
STGD3NC120H-1
STGD3NC120H
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Untitled
Abstract: No abstract text available
Text: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220
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STGB30V60DF,
STGP30V60DF,
STGW30V60DF,
STGWT30V60DF
O-220
O-247
DocID024361
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Untitled
Abstract: No abstract text available
Text: STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 1 • Tail-less switching off 3 2 • Low saturation voltage: VCE sat = 1.8 V (typ.)
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STGFW20V60F,
STGW20V60F,
STGWT20V60F
O-247
DocID024851
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GW40V60DF
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
GW40V60DF
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Untitled
Abstract: No abstract text available
Text: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current
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STGY80H65DFB,
STGW80H65DFB,
STGWT80H65DFB
Max247
O-247
DocID024366
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Untitled
Abstract: No abstract text available
Text: STGW40N120KD 40 A - 1200 V - short circuit rugged IGBT Preliminary Data Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 2 3 1 Application
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STGW40N120KD
O-247
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Untitled
Abstract: No abstract text available
Text: STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB Features TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 2 • Tail-less switching off
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STGB20V60DF,
STGP20V60DF,
STGW20V60DF,
STGWT20V60DF
O-220
O-247
DocID024360
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Untitled
Abstract: No abstract text available
Text: STGB20N40LZ, STGD20N40LZ Automotive-grade 390 V internally clamped IGBT EAS 300 mJ Datasheet - production data Features • Designed for automotive applications and AEQ-Q101 qualified TAB • ESD gate-emitter protection TAB • Gate-collector high voltage clamping
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STGB20N40LZ,
STGD20N40LZ
AEQ-Q101
DocID024251
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Untitled
Abstract: No abstract text available
Text: STW47NM60ND Automotive-grade N-channel 600 V, 0.075 Ω typ., 35 A FDmesh II Power MOSFET with fast diode in a TO-247 package Datasheet - production data Features Order code VDS @ TJMAX RDS(on) max ID STW47NM60ND 650 V 0.088 Ω 35 A • Designed for automotive applications and
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STW47NM60ND
O-247
AEC-Q101
O-247
DocID18281
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Untitled
Abstract: No abstract text available
Text: STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Datasheet - production data Features TAB • Designed for automotive applications and AEC-Q101 qualified TAB • Low threshold voltage 3 1 D²PAK • Low on-voltage drop TAB
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STGB35N35LZ
STGP35N35LZ
AEC-Q101
O-220
DocID12253
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GW40N120
Abstract: GW40N120KD STGW40N120 STGW40N120KD GWA40N120KD STGWA40N120KD
Text: STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode
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STGW40N120KD
STGWA40N120KD
O-247
GW40N120KD
GWA40N120KD
O-247
GW40N120
STGW40N120
STGWA40N120KD
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GW35HF60W
Abstract: STGW35HF60W STGF35HF60W gf35hf60w C5000 IC200 gf35
Text: STGF35HF60W STGW35HF60W 35 A, 600 V Ultrafast IGBT Features • Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications 2 3 3 1 ■ Welding ■ High frequency converters ■ Power factor correction TO-247 1 2 TO-220FP
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STGF35HF60W
STGW35HF60W
O-247
O-220FP
GF35HF60W
GW35HF60W
STGW35HF60W
STGF35HF60W
gf35hf60w
C5000
IC200
gf35
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Untitled
Abstract: No abstract text available
Text: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V
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STGW80H65DFB
STGWT80H65DFB
O-247
DocID024366
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Untitled
Abstract: No abstract text available
Text: STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution
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STGW60V60F
O-247
DocID024701
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Untitled
Abstract: No abstract text available
Text: STGW40H65FB STGWT40H65FB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V
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STGW40H65FB
STGWT40H65FB
O-247
DocID025171
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GW60H65DFB
Abstract: No abstract text available
Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V
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STGW60H65DFB
STGWT60H65DFB
O-247
DocID024365
GW60H65DFB
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 1 3 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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GP19NC60SD
Abstract: STGF19NC60SD STGP19NC60SD
Text: STGF19NC60SD STGP19NC60SD 20 A, 600 V fast IGBT with Ultrafast diode Features • Very low on-voltage drop VCE(sat ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies. ■ TAB 3 1 IGBT co-packaged with Ultrafast freewheeling
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STGF19NC60SD
STGP19NC60SD
O-220FP
O-220
GF19NC60SD
STGP19NCy
GP19NC60SD
STGF19NC60SD
STGP19NC60SD
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