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    STGD3NC120H Price and Stock

    STMicroelectronics STGD3NC120H-1

    IGBT 1200V 16A IPAK
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    DigiKey STGD3NC120H-1 Tube 3,000
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    Avnet Silica STGD3NC120H-1 13 Weeks 75
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    STMicroelectronics STGD3NC120H1

    1200 V, 7 A VERY FAST IGBT Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-251
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    ComSIT USA STGD3NC120H1 18,000
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    STGD3NC120H Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STGD3NC120H-1 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 16A IPAK Original PDF

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    STGD3NC120H

    Abstract: No abstract text available
    Text: STGD3NC120H 7 A, 1200 V very fast IGBT Datasheet − production data Features • High voltage capability ■ High speed TAB Applications ■ Home appliance ■ Lighting 3 2 1 Description IPAK TO251 This device is a very fast IGBT developed using advanced PowerMESH technology. This


    Original     		PDF STGD3NC120H GD3NC120H STGD3NC120H-1 STGD3NC120H