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    ALL DATASHEET HIGH POWER MOSFET TRANSISTOR Search Results

    ALL DATASHEET HIGH POWER MOSFET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    ALL DATASHEET HIGH POWER MOSFET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N-Channel mosfet 500v 25A

    Abstract: FDD3N50NZTM dpak mosfet N-Channel mosfet 400v 25A
    Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS on = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD3N50NZ FDD3N50NZ N-Channel mosfet 500v 25A FDD3N50NZTM dpak mosfet N-Channel mosfet 400v 25A

    mosfet 500v 4A

    Abstract: Mosfet application note fairchild FDD5N50NZTM
    Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZ FDD5N50NZ mosfet 500v 4A Mosfet application note fairchild FDD5N50NZTM

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZ

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS on = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD3N50NZ

    IXAN0061

    Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics
    Text: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and


    Original     		PDF IXAN0061 AN10273 IXAN0061 Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics

    diode marking 226

    Abstract: .25N33 25n33
    Text: QFET FQB25N33 330V N-Channel MOSFET Features General Description • 25A, 330V, RDS on = 0.23Ω @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58nC)


    Original     		PDF FQB25N33 FQB25N33TM diode marking 226 .25N33 25n33

    BD6201XFS

    Abstract: BD6201X BM6201 BM6202 VFBD MCR18EZPJ000 BD6201 BD620
    Text: For air-conditioner fan motor 600V PrestoMOS built-in Three phase brushless fan motor driver BM6201FS  General Description This motor driver IC adopts PrestoMOS™ as the output transistor, and put in a small full molding package with the high voltage gate driver chip. The protection circuits


    Original     		PDF BM6201FS BD6201X BD6201XFS BM6201 BM6202 VFBD MCR18EZPJ000 BD6201 BD620

    BM6202

    Abstract: BM6201FS
    Text: BM6201FS For air-conditioner fan motor 600V PrestoMOS built-in Three phase brushless fan motor driver BM6201FS  General Description This motor driver IC adopts PrestoMOS™ as the output transistor, and put in a small full molding package with the high voltage gate driver chip. The protection circuits


    Original     		PDF BM6201FS BD6201X BM6202 BM6201FS

    3n40

    Abstract: No abstract text available
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD3N40 FDU3N40 FDU3N40 FDD3N40TF FDD3N40TM 3n40

    tektronix 576 curve tracer

    Abstract: NDS351N high power pulse generator with mosfet PN channel MOSFET 10A tektronix type 576 curve tracer RC snubber circuit
    Text: Application Note 558 Ralph Locher Introduction to Power MOSFETs and their Applications INTRODUCTION The Power MOSFETs that are available today perform the same function as Bipolar transistors except the former are voltage controlled in contrast to the current controlled Bipolar devices. Today


    Original     		PDF

    6N25

    Abstract: TO252-DPAK FDD6N25TM
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N25 FDU6N25 FDU6N25 FDD6N25TF FDD6N25TM 6N25 TO252-DPAK

    1N50C

    Abstract: 11n50c FQN1N50CTA FQN1N50CBU
    Text: QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQN1N50C FQN1N50C FQN1N50CBU FQN1N50CTA 1N50C 11n50c

    52N20

    Abstract: fdb fairchild FDB52N20
    Text: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		PDF FDB52N20 FDB52N20 FDB52N20TM 52N20 fdb fairchild

    Untitled

    Abstract: No abstract text available
    Text: For air-conditioner fan motor 600V PrestoMOS built-in Three phase brushless fan motor driver BM6201FS  General Description This motor driver IC adopts PrestoMOS™ as the output transistor, and put in a small full molding package with the high voltage gate driver chip. The protection circuits


    Original     		PDF BM6201FS BD6201X

    14N30

    Abstract: fdb fairchild 200a 300v mosfet MOSFET 300V FDB SERIES APPLICATION NOTES
    Text: UniFET FDB14N30 TM 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18 nC)


    Original     		PDF FDB14N30 FDB14N30 FDB14N30TM 14N30 fdb fairchild 200a 300v mosfet MOSFET 300V FDB SERIES APPLICATION NOTES

    18N50T

    Abstract: fdpf18n50t
    Text: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP18N50 FDPF18N50 FDPF18N50 FDPF18N50T 18N50T

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		PDF FDB66N15 FDB66N15 FDB66N15TM

    9n50cf

    Abstract: 9n50c 9n50
    Text: FRFET TM FQB9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS on = 0.85 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)


    Original     		PDF FQB9N50CF FQB9N50CF FQB9N50CFTM 9n50cf 9n50c 9n50

    FQT1N60C

    Abstract: fairchild MOSFET reliability report
    Text: QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5Ω Features Description • RDS on = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQT1N60C FQT1N60C FQT1N60CTF OT-223-4 fairchild MOSFET reliability report

    FDPF 33N25T

    Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
    Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		PDF FDP33N25 FDPF33N25 FDPF33N25 FDPF33N25T FDPF 33N25T 33N25T 33n25 diode marking 33a on semiconductor marking 33a on semiconductor

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD6N50F FDU6N50F FDU6N50F

    Untitled

    Abstract: No abstract text available
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT

    TA17465

    Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
    Text: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated


    Original     		PDF RF4E20N50S HUF75 337G3, HUF753 TB334 RF4E20N50S O-268 RF4E20N50ST TA17465 RF4E20N50 power mosfet 500v 20a circuit A1025

    ifr420

    Abstract: IFU420 IFR-420 irfr420
    Text: IRFR420, IRFU420 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRFR420, IRFU420 TA17405. TB334 IRFR420 IRFR420B IRFR420TM O-252 ifr420 IFU420 IFR-420