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    FDU6N50F Search Results

    FDU6N50F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDU6N50F Fairchild Semiconductor N-Channel MOSFET 500V, 5.5A, 1.15 Ohm Original PDF

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    FDD6N50F

    Abstract: FDD6N50FTF FDD6N50FTM FDU6N50F FDU6N50FTU failchild 6A04
    Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar


    Original     		PDF FDD6N50F FDU6N50F FDU6N50F FDD6N50FTF FDD6N50FTM FDU6N50FTU failchild 6A04

    FDD6N50

    Abstract: No abstract text available
    Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD6N50F FDU6N50F FDD6N50

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD6N50F FDU6N50F FDU6N50F

    FDD6N50FTM

    Abstract: FDU6N50F FDU6N50FTU FDD6N50F FDD6N50FTF
    Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar


    Original     		PDF FDD6N50F FDU6N50F FDU6N50F FDD6N50FTM FDU6N50FTU FDD6N50FTF