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    FDD6N25TF Price and Stock

    onsemi FDD6N25TF

    MOSFET N-CH 250V 4.4A DPAK
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    Fairchild Semiconductor Corporation FDD6N25TF

    4.4A, 250V, 1.1ohm, N-Channel Power MOSFET, TO-252AA '
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    Rochester Electronics FDD6N25TF 6 1
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    FDD6N25TF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD6N25TF Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    FDD6N25TF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 4.4A DPAK Original PDF

    FDD6N25TF Datasheets Context Search

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    6N25

    Abstract: TO252-DPAK FDD6N25TM
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N25 FDU6N25 FDU6N25 FDD6N25TF FDD6N25TM 6N25 TO252-DPAK

    FDD6N25TM

    Abstract: FDD6N25 FDD6N25TF FDU6N25
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N25 FDU6N25 FDD6N25TM FDD6N25TF FDU6N25

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD6N25 FDU6N25