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    AL QB SOT Search Results

    AL QB SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    AL QB SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLS3135-20

    Abstract: microwave transistor 03 SOT422A sot422
    Text: DISCRETE SEMICONDUCTORS 0ÂTÂ Sin] H T BLS3135-20 Microwave power transistor Product specification Philips Sem iconductors 2000 Feb 01 PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • S uitable fo r short and m edium pulse applications


    OCR Scan     		PDF BLS3135-20 OT422A BLS3135-20 microwave transistor 03 SOT422A sot422

    transistor top 222

    Abstract: LTE21025R SC15 marking code 439
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Self-aligned process entirely ion implanted


    OCR Scan     		PDF LTE21025R OT440A OT440A OT440A. transistor top 222 LTE21025R SC15 marking code 439

    Untitled

    Abstract: No abstract text available
    Text: ^ 7 SGS-THOMSON V # ^D g^ [iL[l TO(MD(gi MJE3439-SGS3439 MJE3440-SGS3440 HIGH VOLTAGE TRANSISTOR D E S C R IP T IO N The MJE3439, MJE3440, SGS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­ tively in TO -126 and SOT-82 plastic package. They


    OCR Scan     		PDF MJE3439-SGS3439 MJE3440-SGS3440 MJE3439, MJE3440, SGS3439 SGS3440 OT-82 JE3440 S3439 JE3439

    microwave transistor 03

    Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor
    Text: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS


    OCR Scan     		PDF PPC5001T OT447A microwave transistor 03 sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor

    il6ac

    Abstract: led 7 doan HC40S1A bc55a Analog multiplexer 4051 YJ 162A S691 oscillator DUAL led 7 doan HC69SA cb 4040
    Text: 2. H IG H GATE SPEED CMOS N AN O NOR AND OR INVERTER, BUFFER EXCLUCIVE O R / NOR SCHIMITT TRIGGER MULTI FUNCTION LEVELSHIFTER FLIP-FLOP SELECTION G U ID E HCOOA HCTOOA HC03A HC10A HC20A HC30A HC132A HC133A HC02A HCT02A HC27A HC4002A HC4078A HC08A HCT08A HC09A HC11A HC21A


    OCR Scan     		PDF HC03A HC10A HC20A HC30A HC132A HC133A HC02A HCT02A HC27A HC4002A il6ac led 7 doan HC40S1A bc55a Analog multiplexer 4051 YJ 162A S691 oscillator DUAL led 7 doan HC69SA cb 4040

    2N5551

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 160 V). APPLICATIONS DESCRIPTION 1 co lle cto r 2 base 3 e m itte r • S w itching and am plification in high voltage applications


    OCR Scan     		PDF 2N5550; 2N5551 SC-43 2N5551

    Untitled

    Abstract: No abstract text available
    Text: H C H BC857A / BC857B / BC857C F /M I L D S E M IC O N D U C T O R BC857A BC857B BC857C SOT-23 ’ B M a rk : 3 E / 3 F / 3 G PNP General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 68.


    OCR Scan     		PDF BC857A BC857B BC857C OT-23

    BFT92

    Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures


    OCR Scan     		PDF BFT92W OT323 BFT92W BFT92. OT323. 711002b BFT92 "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM marking L2 SOT23 6

    BD139

    Abstract: BD136 transistors bd136 bd136 N
    Text: Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 e m itte r 2 collector, connected to metal part of m ounting surface 3 base APPLICATIONS


    OCR Scan     		PDF BD136; BD138; BD140 BD135, BD139. BD138 BD139 BD136 transistors bd136 bd136 N

    transistor c 458

    Abstract: BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor
    Text: DISCRETE SEMICONDUCTORS BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors


    OCR Scan     		PDF BD132 O-126; BD131. MAM272 O-126 transistor c 458 BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor

    transistor marking fl

    Abstract: BF822W
    Text: Philips Semiconductors Product specification NPN high-voltage transistors BF820W; BF822W FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.


    OCR Scan     		PDF BF820W; BF822W BF820W OT323) BF822W BF820ALUE transistor marking fl

    55ay

    Abstract: AL SOT-89 BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX54
    Text: • b b S B ^ l 0D2MbD5 55ß BIAPX N AMER PHILIPS/DISCRETE BCX51 BCX52 BCX53 b?E T> SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended fo r applications in thick and thin -film circuits. These transistors are intended fo r general purposes as well as fo r use in driver staqes


    OCR Scan     		PDF BCX51 BCX52 BCX53 BCX54, BCX55 BCX56 BCX52 55ay AL SOT-89 BCX51 BCX51-10 BCX51-16 BCX52-10 BCX52-16 BCX53 BCX54

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN medium frequency transistor BFR54 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 1 5 V ). APPLICATIONS DESCRIPTION 1 em itter 2 base 3 collector • Active probes • Frequency m ultipliers


    OCR Scan     		PDF BFR54

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • AM m ixers • IF am plifiers in A M /FM receivers.


    OCR Scan     		PDF BF240 SC-43

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 e m itte r • V ery high DC current gain (min. 3 0000). 2 base 3 co lle cto r APPLICATIONS


    OCR Scan     		PDF BC517 BC516. SC-43

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector • High DC current gain (min. 10000). 2 base 3 em itter APPLICATIONS • High gain am plification.


    OCR Scan     		PDF MPSA14 MPSA64. SC-43

    PMBTA64

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP Darlington transistor PMBTA64 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 base • High DC current gain (min. 10000). 2 e m itte r 3 co lle cto r APPLICATIONS


    OCR Scan     		PDF PMBTA64 BTA14. PMBTA64

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low curren t max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 co lle cto r • High DC current gain (min. 10000). 2 base 3 e m itte r APPLICATIONS


    OCR Scan     		PDF MPSA64 PSA14. SC-43

    transistor cc 5551

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 co lle cto r 2 base 3 e m itte r • G eneral purpose sw itching and am plification


    OCR Scan     		PDF 2N5401 SC-43 transistor cc 5551

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP general purpose transistor PMBTA56 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose sw itching and am plification, e.g.


    OCR Scan     		PDF PMBTA56 PMBTA06. BTA56

    T346

    Abstract: 2P transistor
    Text: Philips Semiconductors Product specification 2PB709A PNP general purpose transistor FEATURES PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose sw itching and am plification.


    OCR Scan     		PDF 2PB709A B601A MAM322 SC-59) OT346 T346 2P transistor

    marking code VV transistors

    Abstract: PNP TRANSISTOR "SOT89" marking aa
    Text: Philips Semiconductors Product specification PNP medium power transistors BCX51 ; BCX52; BCX53 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Medium power general purposes


    OCR Scan     		PDF BCX51 BCX52; BCX53 BCX54, BCX55 BCX56. BCX51 BCX51-10 BCX51-16 BCX52 marking code VV transistors PNP TRANSISTOR "SOT89" marking aa

    Untitled

    Abstract: No abstract text available
    Text: • bb53T31 0Q24b77 744 APX N AUER PHILIPS/DISCRETE L7E BF721 BF723 J> SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature plastic envelope intended for application in class-B video output stages in colour television receivers, and general purpose high voltage circuits.


    OCR Scan     		PDF bb53T31 0Q24b77 BF721 BF723 BF720 BF722 0Q24b7T

    BSS63

    Abstract: bss63 bm on pnp low saturation transistor sot23 BSS64 MV TRANSISTOR SOT23 sot23 marking JR Philips BSS63
    Text: Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 100 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • H igh-voltage general purpose


    OCR Scan     		PDF BSS63 BSS64. bss63 bm on pnp low saturation transistor sot23 BSS64 MV TRANSISTOR SOT23 sot23 marking JR Philips BSS63