vskt
Abstract: VSKT152
Text: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips
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VSKT152/04PbF
E78996
2002/95/EC
18-Jul-08
vskt
VSKT152
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Untitled
Abstract: No abstract text available
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
18-Jul-08
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thyristor battery charging
Abstract: 162pb INT-A-PAK diode
Text: VSK.136, .142, .162.PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A New INT-A-PAKTM Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • • • • • • • • •
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E78996
18-Jul-08
thyristor battery charging
162pb
INT-A-PAK diode
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Untitled
Abstract: No abstract text available
Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Diode/Diode Module MDC165A/195A/230A FEATURES • High voltage • Electrically isolated by DBC ceramic AI2O3 • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power diodes in four basic
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MDC165A/195A/230A
MDC165A
MDC195A
MDC230A
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3 phase BUSBAR
Abstract: No abstract text available
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
18-Jul-08
3 phase BUSBAR
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VSKD 236
Abstract: VSKD236 vsk.166 vskj 56 vsk 300 VSKC 236
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
11-Mar-11
VSKD 236
VSKD236
vsk.166
vskj 56
vsk 300
VSKC 236
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VSKT162
Abstract: 016W vsk162
Text: VSK.136.PbF, VSK.142.PbF, VSK.162.PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC
18-Jul-08
VSKT162
016W
vsk162
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Untitled
Abstract: No abstract text available
Text: VS-VSKT152/04PbF www.vishay.com Vishay Semiconductors Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability
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Original
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PDF
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VS-VSKT152/04PbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VSKC
Abstract: No abstract text available
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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Original
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PDF
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E78996
2002/95/EC
18-Jul-08
VSKC
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Untitled
Abstract: No abstract text available
Text: VSK.166, .196, .236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) RoHS • 3500 VRMS isolating voltage COMPLIANT • Industrial standard package
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Original
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PDF
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E78996
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: VS-VSK.136.PbF, VS-VSK.142.PbF, VS-VSK.162.PbF Series www.vishay.com Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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e789
Abstract: No abstract text available
Text: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips
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Original
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PDF
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VSKT152/04PbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
e789
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vsk 300
Abstract: No abstract text available
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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Original
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PDF
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E78996
2002/95/EC
11-Mar-11
vsk 300
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Untitled
Abstract: No abstract text available
Text: VSKT152-04PbF www.vishay.com Vishay Semiconductors Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips
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Original
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PDF
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VSKT152-04PbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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vskt
Abstract: VSKT152 A3350
Text: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage RoHS • Industrial standard package COMPLIANT • High surge capability
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Original
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PDF
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VSKT152/04PbF
E78996
18-Jul-08
vskt
VSKT152
A3350
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Untitled
Abstract: No abstract text available
Text: NTE6234 Powerblock Module Features: D International Standard Package D Direct Copper Bonded AI2O3 Ceramic Base Plate D Planar Passivated Chips D 3600VRMS Isolating Voltage D D D D Applications: D Supplies for DC Power Equipment D DC Supply for PWM Inverter
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NTE6234
3600VRMS
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VSKT162
Abstract: vskt 71 vsk 300 GE thyristor 100in
Text: VSK.136.PbF, VSK.142.PbF, VSK.162.PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC
11-Mar-11
VSKT162
vskt 71
vsk 300
GE thyristor
100in
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ge thyristor
Abstract: E78996
Text: VSK.136.PbF, VSK.142.PbF, VSK.162.PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
ge thyristor
E78996
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D12-CR0805
Abstract: roederstein resistors D12 d12 draloric D25-CR1206 CR0805 vishay CR1206 DRALORIC marking E12 Roederstein k2 BGB 102 cr0805 draloric
Text: OBERFLÄCHENMONTIERBARE WIDERSTÄNDE SURFACE MOUNT RESISTORS EIN UNTERNEHMEN VON Dickschicht Chip-Widerstände D12-CR0805 D25-CR1206 Thick Film Chip Resistors D12-CR0805 D25-CR1206 DRALORIC Dickschicht-Chip-Widerstände bestehen aus einem AI2O3 Substrat mit
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OCR Scan
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PDF
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D12-CR0805
D25-CR1206
D-95085
D-95100
D-84003
D-84034
F-95101
SUNDERLANDSR46SU
roederstein resistors D12
d12 draloric
D25-CR1206
CR0805 vishay
CR1206 DRALORIC
marking E12
Roederstein k2
BGB 102
cr0805 draloric
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Untitled
Abstract: No abstract text available
Text: AfaCßM Metallized Substrates For Microwave Integrated Circuits M/A-COM offers a wide selection of metallized 995 alumina AI2O3 substrates and aluminum nitride ceramic which is an attractive alternative where power and thermal conductivity are a concern. Polished
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OCR Scan
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PDF
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MIL-G-45204
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FHX13LG
Abstract: No abstract text available
Text: F H X 13 LG, FHX14LG Low Noise HEMT Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 3.5 V Gate-Source Voltage vgs -3.0 V Total Power Dissipation Ptot 180 mW Storage Temperature Tstg -65 t o +175 °C Channel Temperature Tch 175 °C Note Note: Mounted on AI2O3 board 30 x 30 x 0.65mm
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OCR Scan
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PDF
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FHX14LG
FHX13LG
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