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    1N914

    Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 1N914 PDIP32 PLCC32 memory write protect m28f512

    AI01378

    Abstract: M29F040 PLCC32 TSOP32 B29F040 512k x 8 chip block diagram plcc32 pinout
    Text: M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical


    Original     		PDF M29F040 12MHz) PLCC32 TSOP32 120ns 150ns AI01378 M29F040 PLCC32 TSOP32 B29F040 512k x 8 chip block diagram plcc32 pinout

    M29F040

    Abstract: PLCC32 TSOP32
    Text: M29F040 4 Mbit 512Kb x 8, Block Erase Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    Original     		PDF M29F040 512Kb 12MHz) M29F040 PLCC32 TSOP32

    M29F040

    Abstract: M29F040B PLCC32 TSOP32 STMicroelectronics PLCC trace code
    Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME


    Original     		PDF M29F040 512Kb M29F040 M29F040B 12MHz) M29F040B PLCC32 TSOP32 STMicroelectronics PLCC trace code

    M29F040

    Abstract: PLCC32 plcc32 pinout TSOP32 B29F040
    Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical


    Original     		PDF M29F040 512Kb 12MHz) PLCC32 TSOP32 120ns 150ns M29F040 PLCC32 plcc32 pinout TSOP32 B29F040

    M29F040

    Abstract: M29F040B PLCC32 TSOP32
    Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME


    Original     		PDF M29F040 512Kb M29F040 M29F040B 12MHz) M29F040B PLCC32 TSOP32

    plcc32 pinout

    Abstract: PLCC32 TSOP32 M29F040 X5555
    Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 5V ± 10% SUPPLY VOLTAGE in READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME


    Original     		PDF M29F040 PLCC32 TSOP32 plcc32 pinout PLCC32 TSOP32 M29F040 X5555

    M29F040

    Abstract: PLCC32 TSOP32
    Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical


    Original     		PDF M29F040 12MHz) PLCC32 TSOP32 M29F040 PLCC32 TSOP32

    plcc32 pinout

    Abstract: No abstract text available
    Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical


    Original     		PDF M29F040 12MHz) PLCC32 TSOP32 M29F040 120ns 150ns AI01379 PLCC32 plcc32 pinout

    M29F040

    Abstract: PLCC32 TSOP32
    Text: M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    Original     		PDF M29F040 12MHz) PLCC32 M29F040 PLCC32 TSOP32

    M29F040

    Abstract: PLCC32 TSOP32
    Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical


    Original     		PDF M29F040 512Kb 12MHz) M29F040 PLCC32 TSOP32

    1N914

    Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 1N914 PDIP32 PLCC32 memory write protect m28f512

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON raDwunnteinMiiiiiDei M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10^s typical ■ ERASE TIME - Block: 1.0 sec typical


    OCR Scan     		PDF M29F040 12MHz) TSOP32 TSOP32

    7130H

    Abstract: tvh07
    Text: S G S -T H O M S O N M29F040 [M Q É » i[L i{ O T ( M ( g § SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5 V ± 10% SUPPLY VOLTAGE In READ


    OCR Scan     		PDF M29F040 10fas 7130H tvh07

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N B M llLlim W D ei_ M29F040 SINGLE SUPPLY 4 Megabit 512Kx 8, Sector Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ BYTE PROGRAMMING TIME: 10^s typical ■ ERASE TIME


    OCR Scan     		PDF M29F040 512Kx 12MHz) TSOP32 TSOP32

    Untitled

    Abstract: No abstract text available
    Text: /S T *7 # S G S -T H O M S O N ^Q g®(Q [I[L[i TO®KilO(gi M 29F040 SINGLE SUPPLY 4 Megabit (512Kx 8, Sector Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5 V ± 10% SUPPLY VOLTAGE in READ


    OCR Scan     		PDF 29F040 512Kx TSOP32 DQ71212

    tsop32 8x20

    Abstract: IA10 M29F040 PLCC32 TSOP32 DQ712
    Text: SGS-THOMSON Vf li^D [^ Q [IL[l©ir[^©Ki]D(gS M29F040 SINGLE SUPPLY 4 Megabit (512Kx 8, Sector Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATIONS ■ BYTE PROGRAMMING TIME: 10^s typical


    OCR Scan     		PDF M29F040 512Kx TSOP32 TSOP32 DQ71212 tsop32 8x20 IA10 M29F040 PLCC32 DQ712

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 70ns 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 1ty s typical ERASE TIME - Sector: 1.0 sec typical - Bulk: 2.5 sec typical


    OCR Scan     		PDF M29F040 25fiA 12MHz) PLCC32S-THOM