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    M28F256

    Abstract: PDIP32 PLCC32
    Text: M28F256 256 Kbit 32Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical


    Original     		PDF M28F256 M28F256 120ns 150ns 200ns AI00689 PDIP32 PLCC32 PDIP32 PLCC32

    1N914

    Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 1N914 PDIP32 PLCC32 memory write protect m28f512

    1N914

    Abstract: M28F256 PDIP32 PLCC32 BP-DIP32
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 1N914 PDIP32 PLCC32 BP-DIP32

    1N914

    Abstract: M28F256 PDIP32 PLCC32
    Text: M28F256 256 Kbit 32Kb x8, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE IN 1s RANGE LOW POWER CONSUMPTION – Standby Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 1N914 PDIP32 PLCC32

    1N914

    Abstract: M28F256 PDIP32 PLCC32
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 1N914 PDIP32 PLCC32

    M28F256

    Abstract: PDIP32 PLCC32 1N914
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 PDIP32 PLCC32 1N914

    Untitled

    Abstract: No abstract text available
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PDIP32 PLCC32 M28F256 100ns 120ns 150ns 200ns

    1N914

    Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 1N914 PDIP32 PLCC32 memory write protect m28f512

    M28F256

    Abstract: PDIP32 PLCC32
    Text: M28F256 256K 32K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 120ns 150ns 200ns AI00689 PDIP32 PLCC32

    Untitled

    Abstract: No abstract text available
    Text: /S T S G S -T H O M S O N * 7 # . HO @l EILi(gTO®R!lö(gi M28F256 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: lOOpA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10>is


    OCR Scan     		PDF M28F256 M28F256 PLCC32

    FZJ 125

    Abstract: 1N914 M28F256 PDIP32 PLCC32
    Text: n q o -2 o £ y j S G S -T H O M S O N OrgEißJlEILliriulfiSL-ligi M28F256 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 100)iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F256 100jxA M28F256 FZJ 125 1N914 PDIP32 PLCC32

    Untitled

    Abstract: No abstract text available
    Text: M28F256 256 Kbit 32Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10|is typical ELECTRICAL CHIP ERASE IN 1s RANGE LOW POWER CONSUMPTION


    OCR Scan     		PDF M28F256 PDIP32 PLCC32 M28F256

    Untitled

    Abstract: No abstract text available
    Text: S G S -1 H 0 M S 0 N M28F256 IfflD Ig ^ O IIL iC T lS ìO lfflD Ig i 256K 32K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F256 200pA PDIP32 M28F256 PLCC32

    ah rzj

    Abstract: 1N914 M28F256 Scans-005192 A0-A14
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns • LOW POWER CONSUMPTION - Standby Current: 100pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10us (PRESTO F ALGORITHM) ■ ELECTRICAL CHIP ERASE IN 1s RANGE


    OCR Scan     		PDF M28F256 100pA M28F256 su18/20 PLCC32 PLCC32 ah rzj 1N914 Scans-005192 A0-A14